相关论文: Development of Yttrium alloy ion source and its ap…
Focused Ion Beam (FIB) processing has been established as a well-suited and promising technique in R&D in nearly all fields of nanotechnology for patterning and prototyping on the micro and nanometer scale and below. Among other concepts,…
Doping of substrates at desired locations is a key technology for spin-based quantum memory devices. Focused ion beam implantation is well-suited for this task due to its high spacial resolution. In this work, we investigate ion-beam…
A laser ion source is under development at the IGISOL facility, Jyvaskyla, in order to address deficiencies in the ion guide technique. The key elements of interest are those of a refractory nature, whose isotopes and isomers are widely…
Resonance ionization laser ion sources are efficient and element selective ion sources, which are particularly well suited for radioactive ion beam facilities. Using TRIUMF's off-line laser ion source test stand with a system of tunable…
Nanoscale focused ion beams (FIBs) represent one of the most useful tools in nanotechnology, enabling nanofabrication via milling and gas-assisted deposition, microscopy and microanalysis, and selective, spatially resolved doping of…
The three-dimensional NAM-ECRIS model is applied for studying the metal ion production in the DECRIS-PM Electron Cyclotron Resonance Ion Source. Experimentally measured extracted ion currents are accurately reproduced with the model.…
A novel room-temperature ion source for the production of atomic ions in electron beam within wide ranges of electron energy and current density is developed. The device can operate both as conventional Electron Beam Ion Source/Trap…
Erbium doped low symmetry Y$_2$SiO$_5$ crystals attract a lot of attention in perspective of quantum information applications. However, only doping of the samples during growth is available up to now, which yields a quite homogeneous doping…
In the past three decades, the development of nuclear physics facilities for fundamental and applied science purposes has required an increasing current of multicharged ion beams. Multiple ionization implies the formation of dense and…
A prototype laser ion source that could demonstrate the possibility of producing intense pulsed high charge state ion beams has been established with a commercial Nd:YAG laser (E max = 3 J, 1064 nm, 8-10 ns) to produce laser plasma for the…
A compact low-energy and high-intensity electron source for material aging applications is presented. A laser-induced plasma moves inside a 30 kV diode and produces a 5 MW electron beam at the anode location. The corresponding dose that can…
We report on the increased extraction of light emitted by solid-state sources embedded within high refractive index materials. This is achieved by making use of a local lensing effect by sub-micron metallic rings deposited on the sample…
Electron beam ion sources (EBISs) are ion sources that work based on the principle of electron impact ionization, allowing the production of very highly charged ions. The ions produced can be extracted as a DC ion beam as well as ion pulses…
We develop an optical lattice system for an ultracold atomic gas mixture of ytterbium (174Yb) and lithium (6Li), which is an ideal system to study disorder and impurity problems. We load a Bose-Einstein condensate of 174Yb into a…
Ion sources using electron impact ionization (EI) methods have been widely accepted in mass spectrometry for planetary exploration missions because of their simplicity. Previous space-borne mass spectrometers were primarily designed with…
The vacuum arc ion source has evolved into a more or less standard laboratory tool for the production of high-current beams of metal ions, and is now used in a number of different embodiments at many laboratories around the world.…
Study of light emitting silicon fabricated by ion implantation.
We demonstrate a prototype of a Focused Ion Beam machine based on the ionization of a laser-cooled cesium beam adapted for imaging and modifying different surfaces in the few-tens nanometer range. Efficient atomic ionization is obtained by…
For many years, Si1-yGey alloys have been applied in the semiconductor industry due to the ability to adjust the performance of Si-based nanoelectronic devices. Following this alloying approach of group-IV semiconductors, adding tin (Sn)…
Quantum light-matter interfaces (QLMIs) connecting stationary qubits to photons will enable optical networks for quantum communications, precise global time keeping, photon switching, and studies of fundamental physics. Rare-earth-ion (REI)…