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Charge transport in topological insulators is primarily characterised by so-called topologically projected helical edge states, where charge carriers are correlated in spin and momentum. In principle, dissipation-less current can be carried…

介观与纳米尺度物理 · 物理学 2022-10-05 Jesse A. Vaitkus , Cong Son Ho , Jared H. Cole

The counterpropagating edge states of a two-dimensional topological insulator (TI) carry electrons of opposite spins. We investigate the transport properties of edge states in a two-dimensional TI which is contacted to ferromagnetic leads.…

介观与纳米尺度物理 · 物理学 2012-09-25 Yuan Li , M. B. A. Jalil , Seng Ghee Tan , GuangHui Zhou

Controlling the flow of spin and charge currents in topological insulators (TIs) is a crucial requirement for applications in quantum computation and spin electronics. We demonstrate that such control can be established in nanoscopic…

介观与纳米尺度物理 · 物理学 2016-03-23 John S. Van Dyke , Dirk K. Morr

We theoretically study spin and charge transport induced by a twisted light beam irradiated on a disordered surface of a doped three dimensional topological insulator (TI). We find that various types of spin vortices are imprinted on the…

介观与纳米尺度物理 · 物理学 2016-05-17 Kunitaka Shintani , Katsuhisa Taguchi , Yukio Tanaka , Yuki Kawaguchi

We study the influence of topological defect on the spin current as well as the spin Hall effect. We find that the nontrivial deformation of the space-time due to topological defect can generate a spin dependent current which then induces…

介观与纳米尺度物理 · 物理学 2013-04-09 Jian-hua Wang , Kai Ma , Kang Li

The outstanding transport properties expected at the edge of two-dimensional time-reversal invariant topological insulators have proven to be challenging to realize experimentally, and have so far only been demonstrated in very short…

介观与纳米尺度物理 · 物理学 2020-04-06 Luca Vannucci , Thomas Olsen , Kristian S. Thygesen

We found that non-magnetic defects in two-dimensional topological insulators induce bound states of two kinds for each spin orientation: electron- and hole-like states. Depending on the sign of the defect potential these states can be also…

介观与纳米尺度物理 · 物理学 2015-02-17 Vladimir A. Sablikov , Aleksei A. Sukhanov

We theoretically study the coupling of electric charge and spin polarization in an equilibrium and nonequilibrium electric transport across a two dimensional Josephson configuration comprised of disordered surface channels of a three…

强关联电子 · 物理学 2016-10-12 I. V. Bobkova , A. M. Bobkov , Alexander A. Zyuzin , Mohammad Alidoust

Nontrivial band topology along with magnetism leads to different novel quantum phases. When time-reversal-symmetry is broken in three-dimensional topological insulators (TIs) by applying high enough magnetic field or proximity effect,…

介观与纳米尺度物理 · 物理学 2023-09-11 Nezhat Pournaghavi , Banasree Sadhukhan , Anna Delin

Study of the dephasing in electronic systems is not only important for probing the nature of their ground states, but also crucial to harnessing the quantum coherence for information processing. In contrast to well-studied conventional…

介观与纳米尺度物理 · 物理学 2017-07-14 Jian Liao , Yunbo Ou , Haiwen Liu , Ke He , Xucun Ma , Qi-Kun Xue , Yongqing Li

Defects which appear in heterostructure junctions involving topological insulators are sources of gapless modes governing the low energy properties of the systems, as recently elucidated by Teo and Kane [Physical Review B82, 115120 (2010)].…

介观与纳米尺度物理 · 物理学 2015-06-03 Ken Shiozaki , Satoshi Fujimoto

We investigate the effects of magnetic and nonmagnetic impurities on the two-dimensional surface states of three-dimensional topological insulators (TIs). Modeling weak and strong TIs using a generic four-band Hamiltonian, which allows for…

介观与纳米尺度物理 · 物理学 2016-02-26 Andreas Pieper , Holger Fehske

In a topological insulator (TI) the character of electron transport varies from insulating in the interior of the material to metallic near its surface. Unlike, however, ordinary metals, conducting surface states in TIs are topologically…

介观与纳米尺度物理 · 物理学 2013-02-08 G. Tkachov , E. M. Hankiewicz

Two-dimensional (2D) topological insulators (TIs) hold promise for applications in spintronics based on the fact that the propagation direction of edge electrons of a 2D TI is robustly linked to their spin origination. Here, with the use of…

材料科学 · 物理学 2015-09-02 Yandong Ma , Liangzhi Kou , Ying Dai , Thomas Heine

We provide a characterization of tunneling between coupled topological insulators in 2D and 3D under the influence of a ferromagnetic layer. We explore conditions for such systems to exhibit integer quantum Hall physics and localized…

介观与纳米尺度物理 · 物理学 2013-05-30 Qinglei Meng , Smitha Vishveshwara , Taylor L. Hughes

Three-dimensional strong topological insulators (TIs) guarantee the existence of a 2-D conducting surface state which completely covers the surface of the TI. The TI surface state necessarily wraps around the TI's top, bottom, and two…

介观与纳米尺度物理 · 物理学 2015-06-17 Vincent E. Sacksteder , Kristin Bjorg Arnardottir , Stefan Kettemann , Ivan A. Shelykh

Magnetic defects play an important, but poorly understood, role in magnetic topological insulators (TIs). For example, topological surface transport and bulk magnetic properties are controlled by magnetic defects in Bi$_2$Se$_3$-based…

We study transport across either a potential or a magnetic barrier which is placed on the top surface of a three-dimensional thin topological insulator (TI). For such thin TIs, the top and bottom surfaces interact via a coupling $\lambda$…

介观与纳米尺度物理 · 物理学 2018-11-28 Adithi Udupa , K. Sengupta , Diptiman Sen

In this work, we study how the combination of rotation and a topological defect can influence the energy spectrum of a two dimensional electron gas in a strong perpendicular magnetic field. A deviation from the linear behavior of the energy…

介观与纳米尺度物理 · 物理学 2017-09-11 Julio Brandão , Cleverson Filgueiras , Moises Rojas , Fernando Moraes

Two-dimensional Na$_3$Bi is a dual topological insulator protected by time-reversal and mirror symmetry, resulting in a promising platform for devices design. However, in reality, the design of topological devices is hindered by a…

介观与纳米尺度物理 · 物理学 2021-03-01 Bruno Focassio , Gabriel R. Schleder , Armando Pezo , Marcio Costa , Adalberto Fazzio
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