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Ultrathin La0.8Ca0.2MnO3 films have been measured in a field-effect geometry. The electric field due to the gate produces a large ambipolar decrease in resistance at low temperatures. This is attributed to the development of a pseudogap in…

强关联电子 · 物理学 2009-11-10 M. Eblen-Zayas , A. Bhattacharya , N. E. Staley , A. L. Kobrinskii , A. M. Goldman

The pyrochlore vanadates are compelling candidates for next-generation dissipationless devices. Lu2V2O7 and Y2V2O7 are ferromagnetic insulators (Tc ~ 70 K) that are believed to exhibit the magnon Hall effect and are expected to host…

CrSb is an attractive material for room-temperature antiferromagnetic spintronic applications because of its high N\'{e}el temperature $\sim$700 K and semi-metallic character. We study the magnetic properties of CrSb bilayers on few-layer…

介观与纳米尺度物理 · 物理学 2021-07-07 Chao Lei , Hua Chen , Allan H. MacDonald

SmB6 has been predicted and verified as a prototype of topological Kondo insulators (TKIs). Here we report longitudinal magnetoresistance and Hall coefficient measurements on co-sputtered nanocrystalline SmB6 films and try to find possible…

强关联电子 · 物理学 2015-07-23 Jie Yong , Yeping Jiang , Xiaohang Zhang , Jongmoon Shin , Ichiro Takeuchi , Richard L. Greene

By using the pulsed-laser-ablation technique, we have successfully grown the La$_{3}$Ni$_{2}$O$_{7-\delta}$ thin films with $c$-axis orientation perpendicular to the film surface. X-ray diffraction shows that the (00l) peaks can be well…

超导电性 · 物理学 2025-10-10 Yuecong Liu , Mengjun Ou , Haifeng Chu , Huan Yang , Qing Li , Yingjie Zhang , Hai-Hu Wen

The evolution of the structural and transport properties of underdoped La$_{1.952}$Sr$_{0.048}$CuO$_4$ thin films under compressive epitaxial strain has been studied. The films of different thicknesses $d$ (from 26 nm to 120 nm) were…

超导电性 · 物理学 2020-02-26 I. Zaytseva , R. Minikayev , E. Dobročka , M. Špankova , N. Bruyant , Marta Z. Cieplak

Magnetotransport properties in a nanocrystalline La$_{0.67}$Sr$_{0.33}$MnO$_{3}$/micron sized Al$_{2}$O$_{3}$ granular composite with different concentrations of Al$_{2}$O$_{3}$ have been studied. The resistivity curves in absence of…

材料科学 · 物理学 2007-05-23 Soumik Mukhopadhyay , I. Das

Hot wall technique was used to grow block single crystal films of Bi_2Te_3 and solid solutions of Bi_(0.5)Sb_(1.5)Te_3 on mica (muscovite) substrates. X-ray diffraction studies demonstrated that the crystalline c-axis in the films was…

材料科学 · 物理学 2014-12-09 L. N. Lukyanova , Yu. A. Boikov , V A Danilov , O A Usov , M P Volkov , V. A. Kutasov

We report results of a magneto-transport study on thin films of the topological semi-metal candidate PdSb$_{2}$ (PS). We observe a positive correction to magneto-conductivity at low temperatures, which is a signature of weak…

强关联电子 · 物理学 2022-02-04 Shama , Aastha Vasdev Dinesh Kumar , Goutam Sheet , Yogesh Singh

We report that thin films of a prototype topological insulator, Bi$_{2}$Se$_{3}$, can be epitaxially grown onto the (0001) surface of BaFe$_{12}$O$_{19}$(BaM), a magnetic insulator with high Curie temperature and large perpendicular…

介观与纳米尺度物理 · 物理学 2015-06-24 Wenmin Yang , Shuo Yang , Qinghua Zhang , Yang Xu , Shipeng Shen , Jian Liao , Jing Teng , Cewen Nan , Lin Gu , Young Sun , Kehui Wu , Yongqing Li

This letter reports the modification of magnetism in a magnetic insulator Y3Fe5O12 thin film by topological surface states (TSS) in an adjacent topological insulator Bi2Se3 thin film. Ferromagnetic resonance measurements show that the TSS…

Significative enhance in magnetocaloric effect due to finite size and surface effects is reported in Terbium(Tb) thin films in the helimagnetic phase (corresponding to a temperature range from $T_C$=219 K to $T_N$=231 K), for external…

材料科学 · 物理学 2017-09-05 V. D. Mello , D. H. A. L. Anselmo , M. S. Vasconcelos , N. S. Almeida

Metal-insulator transition is observed in the La0.8Sr0.2MnO3 thin films with thickness larger than 5 unit cells. Insulating phase at lower temperature appeared in the ultrathin films with thickness ranging from 6 unit cells to 10 unit cells…

We report the temperature($T$) and perpendicular magnetic field($B$) dependence of the Hall resistivity $\rho_{xy}(B)$ of dilute metallic two-dimensional(2D) holes in GaAs over a broad range of temperature(0.02-1.25K). The low $B$ Hall…

强关联电子 · 物理学 2007-05-23 Xuan P. A. Gao , G. S. Boebinger , A. P. Mills , A. P. Ramirez , L. N. Pfeiffer , K. W. West

We evaluate quantum corrections to conductivity in an electrically gated thin film of a three-dimensional (3D) topological insulator (TI). We derive approximate analytical expressions for the low-field magnetoresistance as a function of…

介观与纳米尺度物理 · 物理学 2012-07-25 Ion Garate , Leonid Glazman

We measured the temperature dependence of the linear high field Hall resistivity of La_0.67Ca_0.33MnO_3 (T_C=232K) and La_0.67Sr_0.33MnO_3 (T_C=345K) thin films in the temperature range from 4K up to 360K in magnetic fields up to 20T. At…

材料科学 · 物理学 2009-10-31 W. Westerburg , F. Martin , G. Jakob , P. J. M. van Bentum , J. A. A. J. Perenboom

Antiferromagnetic Weyl semimetals with spin chirality offer excellent platforms to address the Berry phase physics, which manifests prominently in several of their electro-optical and electro-magnetic responses including as a large…

材料科学 · 物理学 2023-07-18 Vinay Sharma , Rajeev Nepal , Ramesh C. Budhani

Motivated by recent advancements highlighting Ta as a promising material in low-loss superconducting circuits and showing long coherence times in superconducting qubits, we have explored the effect of cryogenic temperatures on the growth of…

Temperature-dependence and magnetic field-dependence of the Hall effect and the magnetic property in manganese-oxide thin films are studied. The spontaneous magnetization and the Hall resistivity are obtained for a various of magnetic…

凝聚态物理 · 物理学 2009-10-28 Liang-Jian Zou

We report a transport study of ultrathin Bi2Se3 topological insulators with thickness from one quintuple layer to six quintuple layers grown by molecular beam epitaxy. At low temperatures, the film resistance increases logarithmically with…