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相关论文: Interlayer Resistance of Misoriented MoS2

200 篇论文

The coherent, interlayer resistance of a misoriented, rotated interface between two stacks of AB graphite is determined for a variety of misorientation angles. The quantum-resistance of the ideal AB stack is on the order of 1 to 10 m$\Omega…

介观与纳米尺度物理 · 物理学 2014-08-27 K. M. Masum Habib , Somaia S. Sylvia , Supeng Ge , Mahesh Neupane , Roger K. Lake

Twisted bilayers of two-dimensional materials, such as twisted bilayer graphene, often feature flat electronic bands that enable the observation of electron correlation effects. In this work, we study the electronic structure of twisted…

材料科学 · 物理学 2021-05-18 Valerio Vitale , Kemal Atalar , Arash A. Mostofi , Johannes Lischner

We provide a simple and intuitive explanation for the interlayer sliding energy landscape of metal dichalcogenides. Based on the recently introduced registry index (RI) concept, we define a purely geometrical parameter which quantifies the…

材料科学 · 物理学 2012-07-12 Adi Blumberg , Uri Keshet , Inbal Zaltsman , Oded Hod

In this work, we investigate the effect of the stacking sequence in MoS2 multilayer systems on their electron transport properties, through first-principles simulations of structural and electron transport properties. We show that…

材料科学 · 物理学 2018-11-09 Teresa Cusati , Alessandro Fortunelli , Gianluca Fiori , Giuseppe Iannaccone

Van der Waals heterostructures based on TMDC semiconducting materials have emerged as promising materials due to their spin-valley properties efficiently contrived by the stacking-twist angle. The twist angle drastically alters the…

We derive the boundary conditions for MoS$_2$ and similar transition-metal dichalcogenide honeycomb (2H polytype) monolayers with the same type of $\mathbf{k}\!\cdot\!\mathbf{p}$ Hamiltonian within the continuum model around the K points.…

介观与纳米尺度物理 · 物理学 2016-01-19 Csaba G. Péterfalvi , Andor Kormányos , Guido Burkard

Geometrical confinement effect in exfoliated sheets of layered materials leads to significant evolution of energy dispersion with decreasing layer thickness. Molybdenum disulphide (MoS2) was recently found to exhibit indirect to direct gap…

Semiconductor heterostructures are fundamental building blocks for many important device applications. The emergence of two-dimensional semiconductors opens up a new realm for creating heterostructures. As the bandgaps of transition metal…

Layered materials such as graphite and transition metal dichalcogenides have extremely anisotropic mechanical properties owing to orders of magnitude difference between in-plane and out-of-plane interatomic interaction strengths. Although…

材料科学 · 物理学 2017-11-10 Jae-Ung Lee , Sungjong Woo , Jaesung Park , Hee Chul Park , Young-Woo Son , Hyeonsik Cheong

It is shown, that the monotonic part of interlayer electronic conductivity strongly decreases in high magnetic field perpendicular to the conducting layers. We consider only the coherent interlayer tunnelling, and the obtained result…

介观与纳米尺度物理 · 物理学 2011-11-11 P. D. Grigoriev

In the field of 2D materials, transition metal dichalcogenides (TMDs) are gaining attention for electronic applications. Our study delves into the H-phase monolayer VS$_2$ of the TMD family, analyzing its electronic structure and how strain…

材料科学 · 物理学 2024-01-18 Oguzhan Orhan , Şener Özönder , Soner Ozgen

Many properties of layered materials change as they are thinned from their bulk forms down to single layers, with examples including indirect-to-direct band gap transition in 2H semiconducting transition metal dichalcogenides as well as…

Exciton condensation in an electron-hole bilayer system of monolayer transition metal dichalcogenides is analyzed at three different levels of theory to account for screening and quasiparticle renormalization. The large effective masses of…

介观与纳米尺度物理 · 物理学 2017-11-15 Bishwajit Debnath , Yafis Barlas , Darshana Wickramaratne , Mahesh R. Neupane , Roger K. Lake

We explore the flatness of conduction and valence bands of interlayer excitons in MoS$_2$/WSe$_2$ van der Waals heterobilayers, tuned by interlayer twist angle, pressure, and external electric field. We employ an efficient continuum model…

介观与纳米尺度物理 · 物理学 2023-11-20 Sara Conti , Andrey Chaves , Tribhuwan Pandey , Lucian Covaci , François M. Peeters , David Neilson , Milorad V. Milošević

We investigate the role of long-range Coulomb interactions in $M$-valley moir\'es using the self-consistent Hartree-Fock approximation. This platform was recently proposed [Nature 643, 376 (2025) and arXiv:2411.18828 (2024)] as a new class…

介观与纳米尺度物理 · 物理学 2025-09-24 Christophe De Beule , Liangtao Peng , E. J. Mele , Shaffique Adam

Intercalation of alkali atoms within the lamellar transition metal dichalcogenides is a possible route toward a new generation of batteries. It is also a way to induce structural phase transitions authorizing the realization of optical and…

Hybrid heterostructures based on bulk GaN and two-dimensional (2D) materials offer novel paths toward nanoelectronic devices with engineered features. Here, we study the electronic properties of a mixed-dimensional heterostructure composed…

Transition metal dichalcogenide (TMDC) heterostructures have unique properties that depend on the twisting angle and stacking order of two or more monolayers. However, their practical applications are limited by the low photoluminescence…

Interlayer excitons, or bound electron-hole pairs whose constituent quasiparticles are located in distinct stacked semiconducting layers, are being intensively studied in heterobilayers of two dimensional semiconductors. They owe their…

Transition metal dichalcogenides are 2D structures with remarkable electronic, chemical, optical and mechanical properties. Monolayer and crystal properties of these structures have been extensively investigated, but a detailed…

介观与纳米尺度物理 · 物理学 2018-01-18 Y. M. Jaques , P. Manimunda , Y. Nakanishi , S. Susarla , C. F. Woellner , S. Bhowmick , S. A. S. Asif , D. S. Galvão , C. S. Tiwary , P. M. Ajayan