相关论文: P-Type Tunnel FETs With Triple Heterojunctions

This study presents a comprehensive first-principles investigation of the optoelectronic and thermoelectric properties of aluminum antimonide (AlSb) in its cubic (F-43m) and hexagonal (P63mc) phases. Structural optimization was performed…

The continuous down-scaling of transistors has been the key to the successful development of current information technology. However, with Moore's law reaching its limits, the development of alternative transistor architectures is urgently…

We propose a new triple-junction solar cell structure composed of a III-V heterojunction bipolar transistor solar cell (HBTSC) stacked on top of, and series-connected to, a Si solar cell (III-V-HBTSC-on-Si). The HBTSC is a novel…

We report on first-principles spin-polarised quantum transport calculations (from NEGF+DFT) in MgO-spaced magnetic tunnel junctions (MTJs) based on two different Mn-based Heusler ferrimagnetic metals, namely Mn$_3$Al and Mn$_3$Ga in their…

As metal-oxide-semiconductor field-effect transistors (MOSFET) channel lengths (Lg) are scaled to lengths shorter than Lg<8 nm source-drain tunneling starts to become a major performance limiting factor. In this scenario a heavier transport…

Micrometer-sized Al/AlO$_{x}$/Y tunnel junctions were fabricated by the electron-beam lithography technique. The thin ($\approx$ 1.5--2 nm thickness) insulating AlO$_{x}$ layer was grown on top of the Al base electrode by O$_{2}$ glow…

In this paper, we propose a simulation-based novel Split-Gate Trench MOSFET structure with an optimized fabrication process to enhance power efficiency, switching speed, and thermal stability for high-performance semiconductor applications.…

High-conductivity undoped GaN/AlN 2D hole gases (2DHGs), the p-type dual of the AlGaN/GaN 2D electron gases (2DEGs), have offered valuable insights into hole transport in GaN and enabled the first GaN GHz RF p-channel FETs. They are an…

The phosphorous activation in Ge n$^{+}$/p junctions is compared in terms of junction depth, by using laser spike annealing at 860{\deg}C for 400$\mu$s. The reverse junction leakage is found to strongly depend on the abruptness of dopant…

We present ferromagnetic Nb/Al2O3/Ni60Cu40/Nb Josephson junctions (SIFS) with an ultrathin Al2O3 tunnel barrier. The junction fabrication was optimized regarding junction insulation and homogeneity of current transport. Using…

We present a new style of fluxonium qubit, gatemonium, based on an all superconductorsemiconductor hybrid platform. The linear inductance is achieved using six hundred planar Al-InAs Josephson junctions (JJs) in series. By tuning the single…

The band-to-band tunneling transistors have some performance advantages over the conventional MOSFETs due to the <60mV/dec sub-threshold slope. In this paper, carbon nanotubes are used as a model channel material to address issues that we…

This work represents integration of MTJ with 30nm FinFET for low voltage analog write operations and readout optimization for the p-bit or true random number generator (TRNG), where the induced p-bit, the probabilistic state of the magnetic…

Approaches to developing large-scale superconducting quantum processors must cope with the numerous microscopic degrees of freedom that are ubiquitous in solid-state devices. State-of-the-art superconducting qubits employ aluminum oxide…

Hybrid superconductor-semiconductor(SC-SM) nanowires remain one of the foremost platforms for engineering topological superconductivity and Majorana zero modes(MZMs) towards fault-tolerant topological qubits, especially with the rapid…

We perform an experimental study of DC current induced microwave emission in a magnetic tunnel junction (MTJ) consisting of three active magnetic layers. For this tri-layer structure, in addition to a conventional bilayer orthogonal MTJ…

Since the discovery of the unconventional copper-oxide high-transition-temperature superconductors (HTS), researchers have explored many methods to fabricate superconducting tunnel junctions from these materials for both superconducting…

By measuring the current-voltage characteristics and the switching current distributions as a function of temperature, we have investigated the phase dynamics of Al tunnel ferromagnetic Josephson junctions (JJs), designed to fall in the…

We report the electrical transport in vertical Josephson tunnel junctions (area 400 $\mu m$$^2$) using GdBa$_2$Cu$_3$O$_7$$_{-\delta}$ electrodes and SrTiO$_3$ as an insulating barrier (with thicknesses between 1 nm and 4 nm). The results…

We show evidence that tunnel junctions (TJs) in GaN grown by metal-organic vapor phase epitaxy are dominated by trap-assisted (Poole-Frenkel) tunneling. This stems from observations of the careful optimized doping for the TJs. Especially…