中文
相关论文

相关论文: Temperature Dependence of Wavelength Selectable Ze…

200 篇论文

Nonlinear light-matter interactions in structured materials are the source of exciting properties and enable vanguard applications in photonics. However, the magnitude of nonlinear effects is generally small, thus requiring high optical…

材料科学 · 物理学 2022-03-22 Fadil Iyikanat , Andrea Konečná , F. Javier García de Abajo

Colour centres in hexagonal boron nitride (hBN) have emerged as intriguing contenders for integrated quantum photonics. In this work, we present detailed photophysical analysis of hBN single emitters emitting at the blue spectral range. The…

Employing the density-functional theory with local density approximation, we show that the fully hydrogenated monolayer-hexagonal boron nitride (H$_2$BN) has a direct-band gap of 2.96 eV in the blue-light region while the pristine…

超导电性 · 物理学 2021-10-04 Takat B. Rawal , Ling-Hua Chang , Hao-Dong Liu , Hong-Yan Lu , C. S. Ting

GaN defect based quantum emitters have recently gained attention as promising single photon sources for quantum information applications. However, dephasing processes, manifested as photoluminescence (PL) linewidth broadening, pose a…

量子物理 · 物理学 2025-06-17 Yifei Geng

Colour centres of hexagonal boron nitride (h-BN) have been discovered as promising and practical single photon sources due to their high brightness and narrow spectral linewidth at room-temperature. In order to realize h-BN based photonic…

光学 · 物理学 2022-08-11 Mihyang Yu , Donggyu Yim , Hosung Seo , Jieun Lee

Newly discovered van der Waals materials like MoS$_2$, WSe$_2$, hexagonal boron nitride (h-BN), and recently $\mathrm{C}_2\mathrm{N}$ have sparked intensive research to unveil the quantum behavior associated with their 2D structure. Of…

Spin qubits associated with color centers are promising platforms for various quantum technologies. However, to be deployed in robust quantum devices, the variations of their intrinsic properties with the external conditions, and in…

量子物理 · 物理学 2022-09-08 Hao Tang , Ariel Rebekah Barr , Guoqing Wang , Paola Cappellaro , Ju Li

Point defects in hexagonal boron nitride (hBN) have attracted growing attention as bright single-photon emitters. However, understanding of their atomic structure and radiative properties remains incomplete. Here we study the excited states…

材料科学 · 物理学 2020-11-10 Shiyuan Gao , Hsiao-Yi Chen , Marco Bernardi

We report the temperature dependence of the zero-bias conductance of a single-electron transistor in the regime of weak coupling between the quantum dot and the leads. The Fano line shape, convoluted with thermal broadening, provides a good…

介观与纳米尺度物理 · 物理学 2009-10-31 I. G. Zacharia , D. Goldhaber-Gordon , G. Granger , M. A. Kastner , Yu. B. Khavin , Hadas Shtrikman , D. Mahalu , U. Meirav

The two-dimensional material hexagonal boron nitride (hBN) hosts luminescent centres with emission energies of 2 eV which exhibit pronounced phonon sidebands. We investigate the microscopic origin of these luminescent centres by combining…

The thickness and interfacial geometry of hexagonal boron nitride (hBN) films grown by chemical vapor deposition on polycrystalline nickel foils is studied using low-energy electron microscopy (LEEM). The reflectivity of the electrons,…

介观与纳米尺度物理 · 物理学 2017-09-22 P. C. Mende , Q. Gao , A. Ismach , H. Chou , M. Widom , R. Ruoff , L. Colombo , R. M. Feenstra

Hexagonal boron nitride (h-BN) has received great interest in recent years as a wide bandgap analog of graphene-derived systems. However, the thermal transport properties of h-BN, which can be critical for device reliability and…

介观与纳米尺度物理 · 物理学 2018-07-04 Puqing Jiang , Xin Qian , Ronggui Yang , Lucas Lindsay

The temperature and magnetic field dependence of lattice and carrier excitations in MnSi is studied in detail using inelastic light scattering. The pure symmetry components of the electronic response are derived from the polarization…

强关联电子 · 物理学 2014-07-23 H. -M. Eiter , P. Jaschke , R. Hackl , A. Bauer , M. Gangl , C. Pfleiderer

Among a variety of layered materials used as building blocks in van der Waals heterostructures, hexagonal boron nitride (hBN) appears as an ideal platform for hosting optically-active defects owing to its large bandgap ($\sim 6$ eV). Here…

材料科学 · 物理学 2016-09-28 L. J. Martínez , T. Pelini , V. Waselowski , J. R. Maze , B. Gil , G. Cassabois , V. Jacques

The negatively-charged boron vacancy (V$_\text{B}^-$) center in hexagonal boron nitride (hBN) is currently garnering considerable attention for the design of two-dimensional (2D) quantum sensing units. Such developments require a precise…

Single photon emitters in hexagonal boron nitride have been extensively studied recently. Although unambiguous identification of the emitters is still under intense research, carbon related defects are believed to play a vital role for the…

材料科学 · 物理学 2022-09-19 Song Li , Adam Gali

The strength of the electron-phonon coupling parameter and its evolution throughout a solid's phase diagram often determines phenomena such as superconductivity, charge- and spin-density waves. Its experimental determination relies on the…

We demonstrate a non-monotonic evolution of thermal conductivity of large-area hexagonal boron nitride films with thickness. Wrinkles and defects/impurities are present in these films. Raman spectroscopy, an optothermal non-contact…

Two dimensional van der Waals crystals and their heterostructures provide an exciting alternative to bulk wide bandgap semiconductors as hosts of single photon emitters. Amongst different layered materials, bright and robust defect-based…

材料科学 · 物理学 2020-07-01 Pratibha Dev

Despite its simple crystal structure, layered boron nitride features a surprisingly complex variety of phonon-assisted luminescence peaks. We present a combined experimental and theoretical study on ultraviolet-light emission in hexagonal…