弱耦合单电子晶体管中Fano线形谱的温度依赖性
介观与纳米尺度物理
2009-10-31 v4
摘要
我们报告了单电子晶体管在量子点与导轨之间弱耦合 regime 下零偏置电导的温度依赖性。与热宽化卷积的Fano线形图，可很好地拟合观察到的非对称库仑充电峰。然而，峰宽随温度升高的速度超过了费米分布热宽化的预期，且在Fano干涉不受影响的温度范围内观察到。从拟合结果中提取的本征共振宽度随温度约为二次方增长。超过约600 mK后，峰的非对称性减小，表明随温度升高，维持Fano干涉所需的相干性受到削弱。
引用
@article{arxiv.cond-mat/0009140,
title = {Temperature dependence of Fano line shapes in a weakly coupled single-electron transistor},
author = {I. G. Zacharia and D. Goldhaber-Gordon and G. Granger and M. A. Kastner and Yu. B. Khavin and Hadas Shtrikman and D. Mahalu and U. Meirav},
journal= {arXiv preprint arXiv:cond-mat/0009140},
year = {2009}
}
备注
6 pages, 4 figures. New references have been added to support the analysis