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相关论文: Disorder-driven metal-insulator transitions in def…

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Disorder or sufficiently strong interactions can render a metallic state unstable causing it to turn into an insulating one. Despite the fact that the interplay of these two routes to a vanishing conductivity has been a central research…

强关联电子 · 物理学 2016-10-07 Andrey E. Antipov , Younes Javanmard , Pedro Ribeiro , Stefan Kirchner

In the prevalent picture of ultrafast structural phase transitions, the atomic motion occurs in a slowly varying potential energy surface determined adiabatically by the fast electrons. However, this ignores non-conservative forces caused…

In the most popular approach to the numerical study of the Anderson metal-insulator transition the transfer matrix method is combined with finite-size scaling ideas. This approach requires large computer resources to overcome the…

无序系统与神经网络 · 物理学 2009-11-07 Alex P Taylor , Angus MacKinnon

We show through a variational calculation that in a large range of parameters the paramagnetic to ferromagnetic transition in colossal magnetoresistance compounds is accompanied by a collapse of polaronic lattice disorder in addition to…

强关联电子 · 物理学 2007-05-23 Evgenii E. Narimanov , Chandra M. Varma

Metal-insulator transitions driven by disorder (Delta) and/or by electron correlations (U) are investigated within the Anderson-Hubbard model with local binary-alloy disorder using a simple but consistent mean-field approach. The Delta-U…

强关联电子 · 物理学 2009-11-10 Matthias Balzer , Michael Potthoff

We report a metal-insulator transition (MIT) in the half-filled multiorbital antiferromagnet (AF) BaMn$_2$Bi$_2$ that is tunable by a magnetic field perpendicular to the AF sublattices. Instead of an Anderson-Mott mechanism usually expected…

We investigate the metal insulator transitions at finite temperature for the Hubbard model with diagonal alloy disorder. We solve the dynamical mean field theory equations with the non crossing approximation and we use the coherent…

强关联电子 · 物理学 2009-11-11 P. Lombardo , R. Hayn , G. I. Japaridze

It is well-known that magnetic impurities can change the symmetry class of disordered metallic systems by breaking spin and time-reversal symmetry. At low temperature these symmetries can be restored by Kondo screening. It is also known…

强关联电子 · 物理学 2015-05-13 S. Kettemann , E. R. Mucciolo , I. Varga

We observe a complex change in the hopping exponent value from 1/2 to 1/3 as a function of disorder strength and electron density in a sodium-doped silicon MOSFET. The disorder was varied by applying a gate voltage and thermally drifting…

强关联电子 · 物理学 2008-09-27 T. Ferrus , R. George , C. H. W. Barnes , N. Lumpkin , D. J. Paul , M. Pepper

We investigate electronic transport across a magnetic domain wall (DW) in a three-dimensional (3D) second-order topological insulator subject to Anderson disorder. In the clean limit, the DW hosts two co-propagating one-dimensional (1D)…

介观与纳米尺度物理 · 物理学 2026-04-24 Dong Zhou , Zhe Hou

We theoretically consider the carrier density tuned (apparent) two-dimensional (2D) metal-insulator-transition (MIT) in semiconductor heterostructure-based 2D carrier systems as arising from a classical percolation phenomenon in the…

介观与纳米尺度物理 · 物理学 2013-10-15 S. Das Sarma , E. H. Hwang , Qiuzi Li

Correlated electrons in a binary alloy $A_{x}B_{1-x}$ are investigated within the Hubbard model and dynamical mean--field theory (DMFT). The random energies $\epsilon_{i}$ have a bimodal probability distribution and an energy separation…

强关联电子 · 物理学 2009-11-10 Krzysztof Byczuk , Walter Hofstetter , Dieter Vollhardt

We study temperature induced metal-insulator transition in doped ferromagnetic semiconductors, described by s-d exchange model. The transition is a result of the mobility edge movement, the disorder being due to magnetic ions spin density…

凝聚态物理 · 物理学 2007-05-23 Eugene Kogan , Mark Auslender

Despite much theoretical effort, there is no complete theory of the 'strange' metal state of the high temperature superconductors, and its linear-in-temperature, $T$, resistivity. Recent experiments showing an unexpected linear-in-field,…

强关联电子 · 物理学 2018-05-24 Aavishkar A. Patel , John McGreevy , Daniel P. Arovas , Subir Sachdev

We explore the effects of disordered charged defects on the electronic excitations observed in the photoemission spectra of doped transition metal oxides in the Mott insulating regime by the example of the $R_{1-x}$Ca$_x$VO$_3$ perovskites,…

强关联电子 · 物理学 2018-04-09 Adolfo Avella , Andrzej M. Oleś , Peter Horsch

It is commonly believed that a non-interacting disordered electronic system can undergo only the Anderson metal-insulator transition. It has been suggested, however, that a broad class of systems can display disorder-driven transitions…

介观与纳米尺度物理 · 物理学 2018-03-23 S. V. Syzranov , L. Radzihovsky

Reports of metallic behavior in two-dimensional (2D) systems such as high mobility metal-oxide field effect transistors, insulating oxide interfaces, graphene, and MoS2 have challenged the well-known prediction of Abrahams, et al. that all…

介观与纳米尺度物理 · 物理学 2015-05-27 M. S. Osofsky , S. C. Hernández , A. Nath , V. D. Wheeler , S. Walton , C. M. Krowne , D. K. Gaskill

We use the dynamical mean-field approximation to study singularities in the self-energy and a two-particle irreducible vertex induced by the metal-insulator transition of the disordered Falicov-Kimball model. We set general conditions for…

无序系统与神经网络 · 物理学 2014-08-12 V. Janis , V. Pokorny

Angular perturbations modify the band structure of armchair (and other metallic) carbon nanotubes by breaking the tube symmetry and may induce a metal-semiconductor transition when certain selection rules are satisfied. The symmetry…

介观与纳米尺度物理 · 物理学 2021-07-02 Yan Li , Slava V. Rotkin , Umberto Ravaioli

Disorder effects on three-dimensional second-order topological insulators (3DSOTIs) are investigated numerically and analytically. The study is based on a tight-binding Hamiltonian for non-interacting electrons on a cubic lattice with a…

介观与纳米尺度物理 · 物理学 2020-10-07 C. Wang , X. R. Wang