中文
相关论文

相关论文: Disorder-driven metal-insulator transitions in def…

200 篇论文

We examined the characteristics of a metal-insulator transition on a two-dimensional non-bipartite lattice when both disorders and electron interactions are present. Using a real-space renormalization group method and finite-size scaling…

强关联电子 · 物理学 2007-05-23 Jiaxiang Wang , Sabre Kais

We review recent progress in our theoretical understanding of strongly correlated fermion systems in the presence of disorder. Results were obtained by the application of a powerful nonperturbative approach, the Dynamical Mean-Field Theory…

强关联电子 · 物理学 2015-05-18 K. Byczuk , W. Hofstetter , D. Vollhardt

Using the determinant quantum Monte Carlo method, we investigate the metal-insulator transition in the interacting disordered Hubbard model of a Lieb lattice, in which the system characterizes the flat band centered at the Fermi level. By…

强关联电子 · 物理学 2022-12-06 Yueqi Li , Lingyu Tian , Tianxing Ma , Hai-Qing Lin

In the presence of quenched disorder, the interplay between local magnetic-moment formation and Anderson localization for electrons at a zero-temperature, metal-insulator transition (MIT) remains a long unresolved problem. Here, we study…

无序系统与神经网络 · 物理学 2024-10-17 Xinghai Zhang , Matthew S. Foster

A metal can be driven to an insulating phase through distinct mechanisms. A possible way is via the Coulomb interaction, which then defines the Mott metal-insulator transition (MIT). Another possibility is the MIT driven by disorder, the…

强关联电子 · 物理学 2021-10-04 G. A. Canella , V. V. França

We present a theory of the metal-insulator transition in a disordered two-dimensional electron gas. A quantum critical point, separating the metallic phase which is stabilized by electronic interactions, from the insulating phase where…

无序系统与神经网络 · 物理学 2007-05-23 Alexander Punnoose , Alexander M. Finkel'stein

It is well established that for non-interacting electrons, increasing disorder drives a metal into a gapless localized Anderson insulator. While in three dimensions a threshold in disorder must be crossed for the transition, in two…

强关联电子 · 物理学 2015-06-15 Elias Lahoud , O. Nganba Meetei , K. B. Chaska , A Kanigel , Nandini Trivedi

Ground state of the periodic Anderson model on a triangular lattice is systematically investigated by the mean-field approximation. We found that the model exhibits two different types of partially disordered states: one is at half filling…

强关联电子 · 物理学 2014-07-30 Satoru Hayami , Masafumi Udagawa , Yukitoshi Motome

A correlated material in the vicinity of an insulator-metal transition (IMT) exhibits rich phenomenology and variety of interesting phases. A common avenue to induce IMTs in Mott insulators is doping, which inevitably leads to disorder.…

We present a theory for disordered interacting electrons that can describe both the Mott and the Anderson transition in the respective limits of zero disorder and zero interaction. We use it to investigate the T=0 Mott-Anderson transition…

强关联电子 · 物理学 2009-10-28 V. Dobrosavljevic , G. Kotliar

We studied several aspects of the Mott metal-insulator transition in the disordered case. The model on which we based our analysis is the disordered Hubbard model, which is the simplest model capable of capturing the Mott metal-insulator…

(abridged) We present results of the disorder-induced metal-insulator-transition (MIT) in three-dimensional amorphous indium-oxide films. The amorphous version studied here differs from the one reported earlier [PRB 46, 10917 (1992)] in…

材料科学 · 物理学 2012-10-02 U. Givan , Z. Ovadyahu

Frustrated Mott insulators such as transition metal dichalcogenides present an ideal platform for the experimental realization of externally tuned insulator-metal transition. In this paper, we present the first nonperturbative numerical…

强关联电子 · 物理学 2022-06-14 Madhuparna Karmakar , Nyayabanta Swain

In this paper we present results on the disordered Holstein-Double Exchange model, explicitly in three dimension and `metallic' densities, obtained by using a recently developed Monte Carlo approach. Following up on our earlier paper,…

强关联电子 · 物理学 2015-06-25 Pinaki Majumdar , Sanjeev Kumar

A zero temperature Anderson-Mott transition driven by spin disorder can be `tuned' by an applied magnetic field to achieve colossal magnetoconductance. Usually this is not possible since spin disorder by itself cannot localise a high…

强关联电子 · 物理学 2009-11-07 Pinaki Majumdar , Sanjeev Kumar

It is now possible to study experimentally the combined effect of disorder and interactions in cold atom physics. Motivated by these developments we investigate the dynamics around the metal-insulator transition (MIT) in a one-dimensional…

量子气体 · 物理学 2012-03-22 Masaki Tezuka , Antonio M. Garcia-Garcia

We demonstrate that local density of states fluctuations in disordered Anderson lattice models universally lead to the emergence of non-Fermi liquid (NFL) behavior. The NFL regime appears at moderate disorder (W = W_c) and is characterized…

强关联电子 · 物理学 2007-05-23 E. Miranda , V. Dobrosavljevic

The double-exchange model for the Mn oxides with orbital degeneracy is studied with including on-site Coulomb repulsion, Jahn-Teller (J-T) coupling and doping-induced disorder. In the strong interaction limit, it is mapped onto a…

强关联电子 · 物理学 2009-10-31 L. Sheng , D. N. Sheng , C. S. Ting

Low-disorder and high-mobility 2D electron (or hole) systems undergo an apparent metal-insulator-transition (MIT) at low temperatures as the carrier density (n) is varied. In some situations, the 2D MIT can be caused at a fixed low carrier…

介观与纳米尺度物理 · 物理学 2015-08-06 S. Das Sarma , E. H. Hwang

We show that when graphene monolayers are disordered, the conductance exhibits a metallic-to-insulating transition, which opens the door to new electronic devices. The transition can be observed by driving the density or Fermi energy…

无序系统与神经网络 · 物理学 2009-12-07 M. Hilke
‹ 上一页 1 2 3 10 下一页 ›