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相关论文: Disorder-driven metal-insulator transitions in def…

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The physics of manganites appears to be dominated by phase competition among ferromagnetic metallic and charge-ordered antiferromagnetic insulating states. Previous investigations (Burgy {\it et al.}, Phys. Rev. Lett. {\bf 87}, 277202…

强关联电子 · 物理学 2007-05-23 C. Sen , G. Alvarez , E. Dagotto

Understanding of metal insulator transitions in a strongly correlated system, driven by Anderson localization (disorder) and/or Mott localization (correlation), is a long standing problem in condensed matter physics. The prevailing…

强关联电子 · 物理学 2014-12-05 Abhijit Biswas , Ki-Seok Kim , Yoon Hee Jeong

We study the effect of disorder on the semimetal -- Mott insulator transition in the half-filled repulsive Hubbard model on a honeycomb lattice, a system that features vanishing density of states at the Fermi level. Using the determinant…

强关联电子 · 物理学 2018-03-22 Tianxing Ma , Lufeng Zhang , Chia-Chen Chang , Hsiang-Hsuan Hung , Richard T. Scalettar

We uncover a disorder-driven instability in the diffusive Fermi liquid phase of a class of many-fermion systems, indicative of a metal-insulator transition of first order type, which arises solely from the competition between quenched…

无序系统与神经网络 · 物理学 2009-11-13 Matthew S. Foster , Andreas W. W. Ludwig

Attractive negative-$U$ interactions between electrons facilitated by strong electron-phonon interaction are common in highly polarizable and disordered materials such as amorphous chalcogenides, but there is no direct evidence for them in…

介观与纳米尺度物理 · 物理学 2017-03-07 Yang Lu , I-Wei Chen

We calculate the corrections to the conductivity and compressibility of a disordered metal when the mean free path is smaller than the screening length. Such a condition is shown to be realized for low densities and large disorder. Analysis…

强关联电子 · 物理学 2009-10-31 Qimiao Si , C. M. Varma

Understanding the metal-insulator transition in disordered many-fermion systems, both with and without interactions, is one of the most challenging and consequential problems in condensed matter physics. In this paper we address this issue…

无序系统与神经网络 · 物理学 2015-10-19 Vipin Kerala Varma , Sebastiano Pilati

We examine the onset of Anderson localization in three-dimensional systems with structural disorder in the form of lattice irregularities and in the absence of any on-site disordered potential. Analyzing two models with distinct types of…

无序系统与神经网络 · 物理学 2025-05-29 Sourav Bhattacharjee , Piotr Sierant , Marek Dudyński , Jan Wehr , Jakub Zakrzewski , Maciej Lewenstein

The effect of disorder on a class of transition metal oxides described by a single orbital Hubbard model at half filling is investigated. The phases are characterized by the nature of the electronic and spin excitations. The frequency and…

强关联电子 · 物理学 2008-07-23 Kohjiro Kobayashi , Byounghak Lee , Nandini Trivedi

We calculate the optical and DC conductivity for half-filled disordered Hubbard model near the Mott metal-insulator transition. As in the clean case, large metallic resistivity is driven by a strong inelastic scattering, and Drude-like peak…

强关联电子 · 物理学 2010-03-01 Milos M. Radonjic , D. Tanaskovic , V. Dobrosavljevic , K. Haule

We report the discovery of phenomena consistent with bad-metal relaxation dynamics in the metallic regime of an optical-lattice Hubbard model. The transport lifetime induced by inter-particle scattering for a mass current of atoms excited…

量子气体 · 物理学 2018-08-29 Wenchao Xu , William McGehee , William Morong , Brian DeMarco

We study ground state and finite temperature properties of disordered heavy fermion metals by using a generalization of dynamical mean field theory which incorporates Anderson localization effects. The emergence of a non-Fermi liquid…

强关联电子 · 物理学 2007-05-23 M. C. O. Aguiar , E. Miranda , V. Dobrosavljevic

Strongly correlated fermions in a crystal or in an optical lattice in the presence of binary alloy disorder are investigated. We employ the statistical dynamical mean-field theory, which incorporates both, local fluctuations due to disorder…

无序系统与神经网络 · 物理学 2010-09-15 Denis Semmler , Krzysztof Byczuk , Walter Hofstetter

Strong disorder has a crucial effect on the electronic structure in quantum materials by increasing localization, interactions, and modifying the density of states. Bi$_x$TeI films grown at room temperature and \SI{230}{K} exhibit dramatic…

材料科学 · 物理学 2023-06-06 Paul Corbae , Nicolai Taufertshöfer , Ellis Kennedy , Mary Scott , Frances Hellman

We have varied the disorder in a two-dimensional electron system in silicon by applying substrate bias. When the disorder becomes sufficiently low, we observe the emergence of the metallic phase, and find evidence for a metal-insulator…

强关联电子 · 物理学 2009-10-30 Dragana Popovic , A. B. Fowler , S. Washburn

In conventional metals, electronic transport in a magnetic field is characterized by the motion of electrons along orbits on the Fermi surface, which usually causes an increase in the resistivity through averaging over velocities. Here we…

介观与纳米尺度物理 · 物理学 2016-11-07 Maxim Breitkreiz , Philip M. R. Brydon , Carsten Timm

We study the electron transport in a deformable lattice modeled in the semiclassical approximation as a discrete nonlinear elastic chain where acoustic phonons are in thermal equilibrium at temperature T. We reveal that an effective dynamic…

无序系统与神经网络 · 物理学 2018-08-29 A. V. Savin , Y. S. Kivshar , M. I. Molina

Metal-to-insulator transitions (MIT) can be driven by a number of different mechanisms, each resulting in a different type of insulator -- Change in chemical potential can induce a transition from a metal to a band insulator; strong…

In a disordered environment, the probability of transmission of a wave reduces with increasing disorder, the ultimate limit of which is the near-zero transmission due to Anderson localization. Under localizing conditions, transport is…

无序系统与神经网络 · 物理学 2022-06-14 Himadri Sahoo , R Vijay , Sushil Mujumdar

A Metal-Disordered Mott insulator-Metal heterostructure is studied at half-fiiling using unrestricted Hartree Fock method. The corresponding clean system has been shown to be an insulator for any finite on site correlation. Interestingly we…

强关联电子 · 物理学 2011-03-22 Sanjay Gupta , Tribikram Gupta