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There is an interesting proposal that the long-range Coulomb interaction in suspended graphene can generate a dynamical gap, which leads to a semimetal-insulator phase transition. We revisit this problem by solving the self-consistent…

强关联电子 · 物理学 2015-06-04 Jing-Rong Wang , Guo-Zhu Liu

In this work, we present a performance analysis of Field Effect Transistors based on recently fabricated 100% hydrogenated graphene (the so-called graphane) and theoretically predicted semi-hydrogenated graphene (i.e. graphone). The…

介观与纳米尺度物理 · 物理学 2015-05-18 Gianluca Fiori , S. Lebègue , A. Betti , P. Michetti , M. Klintenberg , O. Eriksson , Giuseppe Iannaccone

We report mid-infrared photocurrent spectra of graphene nanoribbon arrays on SiO2 dielectrics showing dual signatures of the substrate interaction. First, hybrid polaritonic modes of graphene plasmons and dielectric surface polar phonons…

New interlayer intermolecular potential model was proposed and it represented ``ABAB'' staking of graphite. Hydrogen atom sputtering on graphite surface was investigated using molecular dynamics simulation. In the initial short time period,…

材料科学 · 物理学 2007-11-26 Atsushi Ito , Hiroaki Nakamura

We study the effect of Coulomb drag between two closely positioned graphene monolayers. In the limit of weak electron-electron interaction and small inter-layer spacing ($\mu_{1(2)}, T\ll v/d$) the drag is described by a universal function…

介观与纳米尺度物理 · 物理学 2012-08-07 B. N. Narozhny , M. Titov , I. V. Gornyi , P. M. Ostrovsky

Due to its high carrier mobility, broadband absorption, and fast response time, graphene is attractive for optoelectronics and photodetection applications. However, the extraction of photoelectrons in conventional metal-graphene junction…

The question of whether electron-electron interactions can drive a metal to insulator transition in graphene under realistic experimental conditions is addressed. Using three representative methods to calculate the effective long-range…

强关联电子 · 物理学 2015-11-17 Ho-Kin Tang , E. Laksono , J. N. B. Rodrigues , P. Sengupta , F. F. Assaad , S. Adam

We report on a large improvement in the wetting of Al2O3 thin films grown by un-seeded atomic layer deposition on monolayer graphene, without creating point defects. This enhanced wetting is achieved by greatly increasing the nucleation…

材料科学 · 物理学 2014-11-14 Bruno Dlubak , Piran R. Kidambi , Robert S. Weatherup , Stephan Hofmann , John Robertson

Conventional field effect transistor operation in graphene is limited by its zero gap and minimum quantum conductivity. In this work, we report on controlled electrochemical modification of graphene such that its conductance changes by more…

材料科学 · 物理学 2007-12-13 T. J. Echtermeyer , M. C. Lemme , M. Baus , B. N. Szafranek , A. K. Geim , H. Kurz

The realization of graphene has provided a bench-top laboratory for quantum electrodynamics. The low-energy excitations of graphene are two-dimensional massless Dirac fermions with opposite chiralities at the $\pm$K valleys of the graphene…

介观与纳米尺度物理 · 物理学 2024-12-11 Liguo Ma , Raghav Chaturvedi , Phuong X. Nguyen , Kenji Watanabe , Takashi Taniguchi , Kin Fai Mak , Jie Shan

We investigate quantum transport in a normal/superconductor graphene heterostructure, including the possibility of an anisotropic pairing potential in the superconducting region. We find that under certain circumstances, the conductance…

超导电性 · 物理学 2009-11-13 J. Linder , A. Sudbø

Integrating graphene with plasmonic nanostructures results in multifunctional hybrid systems with enhanced performance for numerous applications. In this work, we take advantage of the remarkable mechanical properties of graphene to combine…

Predictive first-principles calculations suggest graphitic-like GaN to be theoretically possible. Thus far, it has not been experimentally reported. We report on GaN monolayer in a buckled geometry obtained in confinement at graphene/SiC…

The thriving area of synthetic carbon allotropes witnesses theoretic proposals and experimental syntheses of many new two-dimensional ultrathin structures, which are often achieved by careful arrangement of non-hexagon $\mathrm{sp^2}$…

介观与纳米尺度物理 · 物理学 2020-08-26 Guohui Zheng , Xiaosi Qi

Graphene, a single atomic layer of covalently bonded carbon atoms, has been investigated intensively for optoelectronics and represents a promising candidate for high-speed electronics. Here we present a microwave mixer constructed as an…

We examine the 1/N expansion, where N is the number of two-component Dirac fermions, for Coulomb interactions in graphene with a gap of magnitude $\Delta = 2 m$. We find that for $N\alpha\gg1$, where $\alpha$ is graphene's "fine structure…

介观与纳米尺度物理 · 物理学 2022-03-07 Valeri N. Kotov , Bruno Uchoa , A. H. Castro Neto

Mechanically exfoliated graphene layers deposited on SiO2 substrate were irradiated with Ar+ ions in order to experimentally study the effect of atomic scale defects and disorder on the low-energy electronic structure of graphene. The…

介观与纳米尺度物理 · 物理学 2009-01-21 Levente Tapaszto , Gergely Dobrik , Peter Nemes-Incze , Gabor Vertesy , Philippe Lambin , Laszlo P Biro

We report on the results of the first-principle numerical study of spontaneous breaking of chiral (sublattice) symmetry in suspended monolayer graphene due to electrostatic interaction, which takes into account the screening of Coulomb…

强关联电子 · 物理学 2015-06-15 M. V. Ulybyshev , P. V. Buividovich , M. I. Katsnelson , M. I. Polikarpov

Epitaxial graphene on SiC(0001) suffers from strong intrinsic n-type doping. We demonstrate that the excess negative charge can be fully compensated by non-covalently functionalizing graphene with the strong electron acceptor…

We present a novel measurement approach which combines the electrical characterization of solution-gated field effect transistors based on epitaxial bilayer graphene on 4H-SiC (0001) with simultaneous Raman spectroscopy. By changing the…

介观与纳米尺度物理 · 物理学 2015-12-15 J. Binder , J. M. Urban , R. Stepniewski , W. Strupinski , A. Wysmolek