相关论文: Extremely large and significantly anisotropic magn…
The extremely large transverse magnetoreistance (the magnetoresistant ratio $\sim 1.3\times10^5\%$ in 2 K and 9 T field, and $4.3\times 10^6\%$ in 0.4 K and 32 T field, without saturation), and the metal-semiconductor crossover induced by…
The magnetoresistance is the magnetic field induced change of electrical resistivity of a material. Recent studies have revealed extremely large magnetoresistance in several non-magnetic semimetals, which has been explained on the basis of…
Magnetoresistance is the change of a material's electrical resistance in response to an applied magnetic field. In addition to its intrinsic scientific interest, it is a technologically important property, placing it in "Pasteur's quadrant"…
Extremely large magnetoresistance (XMR) was recently discovered in WTe$_2$, triggering extensive research on this material regarding the XMR origin. Since WTe$_2$ is a layered compound with metal layers sandwiched between adjacent…
Colossal magnetoresistance is of great fundamental and technological significance and exists mostly in the manganites and a few other materials. Here we report colossal magnetoresistance that is starkly different from that in all other…
The quantum oscillations of the magnetoresistance under ambient and high pressure have been studied for WTe$_2$ single crystals, in which extremely large magnetoresistance was discovered recently. By analyzing the Shubnikov-de Haas…
Magnetic moments intercalated into layered transition metal dichalcogenides are an excellent system for investigating the rich physics associated with magnetic ordering in a strongly anisotropic, strong spin-orbit coupling environment. We…
We performed the detailed magnetotransport measurements and first principle calculations to study the electronic properties of the transition metal dipnictides ZrAs2, which is a topological nodal-line semimetal. Extremely large unsaturated…
The family of materials defined as ZrSiX (X = S, Se, Te) has been established as Dirac node-line semimetals, and subsequent study is urgent to exploit the promising application of unusual magnetoresistance property. In this work, we…
Quasi-two dimensional transition metal dichalcogenides (TMD) exhibit dramatic properties that may transform electronic and photonic devices. We report on how the anomalously large magnetoresistance (MR) observed under high magnetic field in…
In intercalated transition metal dichalcogenide $Fe_xTaS_2$ (0.2 $\leq$ x $\leq$ 0.4) single crystals, large magnetic anisotropy is observed. Transport property measurements indicate that heavy Fe-doping leads to a large anisotropy of…
The electronic structure basis of the extremely large magnetoresistance in layered non-magnetic tungsten ditelluride has been investigated by angle-resolved photoelectron spectroscopy. Hole and electron pockets of approximately the same…
Anisotropic magneto-transport measurements are reported on Fe1/4TaS2 single crystals grown by vapor transport. Both the magnetization and resistivity are extremely anisotropic, with the magnetic moments aligned parallel to the c…
The resistance of a metal in a magnetic field can be very illuminating about its ground state. Some famous examples include the integer and fractional quantum Hall effects\cite{Klitzing-QHE,Tsui-FQHE}, Shubnikov-de Haas…
A detailed study of the electronic transport and magnetic properties of Fe$_{1-x}$Cu$_x$Cr$_2$S$_4$ ($x \leq 0.5$) on single crystals is presented. The resistivity is investigated for $2 \leq T \leq 300$ K in magnetic fields up to 14 Tesla…
We present a comprehensive first-principles study of the magnetoresistance in ZrSi$X$ ($X=$ S, Se, Te) topological nodal-line semimetals. Our study demonstrates that all primary features of the experimentally measured magnetoresistance in…
With a surge of interest in spintronics, the manipulation and detection of colossal magnetoresistance in quasi-two-dimensional layered magnetic materials have become a key focus, driven by their relatively scarce occurrence compared to…
Magnetization (M) and magnetoresistance (MR) measurements on polycrystalline R2Mn3Si5 (R = Tb, Dy and Ho) compounds (tetragonal, space group P4/mnc) have been carried out in the temperature range of 2 K-300 K, in various applied fields.…
MBE-grown, 5 nm-thick annealed Ga0.95Mn0.05As films with Tc~90K demonstrate transition from metallic to insulating state below To~10K, where sheet resistances Rsh~h/e2 and both longitudinal Rxx and transverse Rxy components become…
We report the discovery of giant and anisotropic magnetoresistance due to the orbital rearrangement in a non-magnetic correlated metal. In particular, we measured the magnetoresistance under fields up to 31.4 T in the cubic Pr-based heavy…