相关论文: Switching local magnetization by electric-field-in…

Spin-orbit torques induced by spin Hall and interfacial effects in heavy metal/ferromagnetic bilayers allow for a switching geometry based on in-plane current injection. Using this geometry, we demonstrate deterministic magnetization…

When electric and magnetic fields are applied together on a magnetoelectric antiferromagnet, the domain state is subject to reversal. Although the initial and final conditions are saturated single-domain states, the process of reversal may…

Realising the promise of next-generation magnetic nanotechnologies is contingent on the development of novel methods for controlling magnetic states at the nanoscale. There is currently demand for simple and flexible techniques to access…

The recently proposed dynamical multiferroic effect describes the generation of magnetization from temporally varying electric polarization. Here, we show that the effect can lead to a magnetic field at moving ferroelectric domain walls,…

A domain wall and spin supercurrent can coexist in magnets with easy-cone anisotropy owing to simultaneous spontaneous breaking of Z$_2$ and U(1) symmetries. Their interaction is theoretically investigated in quasi one-dimensional…

Spin-polarized low-energy electron microscopy was used to image a magnetite crystal with (100) surface orientation. Sets of spin-dependent images of magnetic domain patterns observed in this surface were used to map the direction of the…

The spin transfer torque generated by a spin-polarized current can induce the shift of the magnetic domain-wall position. In this work, we study theoretically the current-induced domain-wall motion by using the collective coordinate…

Identifying an efficient pathway to change the order parameter via a subtle excitation of the coupled high-frequency mode is the ultimate goal of the field of ultrafast phase transitions. This is an especially interesting research direction…

We investigate a spin reorientation transition (SRT) in ultrathin magnetic films by Monte-Carlo simulations. We assume that the lateral size of the film is relatively small and it has a single-domain structure. To gain insights into the…

We show that spin transfer torque from direct spin-polarized current applied parallel to a magnetic domain wall (DW) induces DW motion in a direction independent of the current polarity. This unidirectional response of the DW to spin torque…

Antiferromagnets have a number of favourable properties as active elements in spintronic devices, including ultra-fast dynamics, zero stray fields and insensitivity to external magnetic fields . Tetragonal CuMnAs is a testbed system in…

Electric field control of magnetic anisotropy in ferromagnets has been intensively pursued in spintronics to achieve efficient memory and computing devices with low energy consumption. Compared with ferromagnets, antiferromagnets hold huge…

We theoretically study the magnetization dynamics of a thin ferromagnetic film exchange-coupled with a surface of a strong three-dimensional topological insulator. We focus on the role of electronic zero modes imprinted by domain walls…

The ability to control electronic properties of a material by externally applied voltage is at the heart of modern electronics. In many cases, it is the so-called electric field effect that allows one to vary the carrier concentration in a…

Spin waves in antiferromagnets are linearly or circularly polarized. Depending on the polarization, traversing spin waves alter the staggered field in a qualitatively different way. We calculate the drift velocity of a moving domain wall as…

We study the reversal of magnetization in an isotropic ferromagnetic film free from charges by exposing it to a circularly polarized electromagnetic (EM) field. The magnetization excitations obtained in the form of line and lump solitons of…

Superconducting spintronics has emerged in the last decade as a promising new field that seeks to open a new dimension for nanoelectronics by utilizing the internal spin structure of the superconducting Cooper pair as a new degree of…

Shifting electrically a magnetic domain wall (DW) by the spin transfer mechanism is one of the future ways foreseen for the switching of spintronic memories or registers. The classical geometries where the current is injected in the plane…

We present a method to map the saturation magnetization of soft ultrathin films with perpendicular anisotropy, and we illustrate it to assess the compositional dependence of the magnetization of CoFeB(1 nm)/MgO films. The method relies on…

Manipulation of the spin-states of a quantum dot by purely electrical means is a highly desirable property of fundamental importance for the development of spintronic devices such as spin-filters, spin-transistors and single-spin memory as…