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Spintronic devices currently rely on magnetic switching or controlled motion of domain walls by an external magnetic field or spin-polarized current. Achieving the same degree of magnetic controllability using an electric field has…

材料科学 · 物理学 2012-02-14 Tuomas H. E. Lahtinen , Kévin J. A. Franke , Sebastiaan van Dijken

A study of dynamic and reversible voltage controlled magnetization switching in ferromagnetic Co/Pt thin film with perpendicular magnetic anisotropy at room temperature is presented. The change in the magnetic properties of the system is…

All-electrical and programmable manipulations of ferromagnetic bits are highly pursued for the aim of high integration and low energy consumption in modern information technology. Methods based on the spin-orbit torque switching in heavy…

The discovery that a spin polarized current can exert a large torque on a ferromagnet through a transfusion of spin angular momentum, offers a new way to control a magnetization by simple current injection, without the help of an applied…

Control of magnetic domain wall motion by electric fields has recently attracted scientific attention because of its potential for magnetic logic and memory devices. Here, we report on a new driving mechanism that allows for magnetic domain…

Electrical current-induced deterministic magnetization switching in a magnetic multilayer structure without external magnetic field is realized by utilizing interlayer exchange coupling. Two ferromagnetic Co layers, with in-plane and…

材料科学 · 物理学 2018-04-04 Yu Sheng , Kevin William Edmonds , Xingqiao Ma , Houzhi Zheng , Kaiyou Wang

Controlling magnetism using voltage is highly desired for applications, but remains challenging due to fundamental contradiction between polarity and magnetism. Here we propose a mechanism to manipulate magnetic domain walls in…

材料科学 · 物理学 2021-03-22 Jun Chen , Shuai Dong

We demonstrate that magnetic properties of ultra-thin Co films adjacent to Gd2O3 gate oxides can be directly manipulated by voltage. The Co films can be reversibly changed from an optimally-oxidized state with a strong perpendicular…

By means of local ion implantation, we investigated the influence of lateral interface on current-induced magnetic switching by spin-orbit torque in a perpendicularly magnetized Pt/Co/Ta multilayer. The experimental results show that, in…

应用物理 · 物理学 2024-06-19 Yanru Li , Meiyin Yang , Guoqiang Yu , Baoshan Cui , Jun Luo

The electric manipulation of antiferromagnets has become an area of great interest recently for zero-stray-field spintronic devices, and for their rich spin dynamics. Generally, the application of antiferromagnetic media for information…

介观与纳米尺度物理 · 物理学 2017-05-24 Muftah Al-Mahdawi , Satya Prakash Pati , Yohei Shiokawa , Shujun Ye , Tomohiro Nozaki , Masashi Sahashi

The effect of magnetic domain boundaries displacement induced by electric field is observed in epitaxial ferrite garnet films (on substrates with the (210) crystallographic orientation). The effect is odd with respect to the electric field…

材料科学 · 物理学 2008-01-29 A. S. Logginov , G. A. Meshkov , V. A. Nikolaev , A. P. Pyatakov , A. K. Zvezdin

The spin-orbit torque device is promising as a candidate for next generation magnetic memory, while the static in-plane field needed to induce deterministic switching is a main obstacle for its application in highly integrated circuits.…

The electric (E) field control of magnetic properties opens the prospects of an alternative to magnetic field or electric current activation to control magnetization. Multilayers with perpendicular magnetic anisotropy (PMA) have proven to…

The dynamic observation of domain wall motion induced by electric field in magnetoelectric iron garnet film is reported. Measurements in 800 kV/cm electric field pulses gave the domain wall velocity ~45 m/s. Similar velocity was achieved in…

First-principles density-functional theory calculations show switching magnetization by 90 degree can be achieved in ultrathin BFO film by applying external electric-field. Up-spin carriers appear to the surface with positive field while…

材料科学 · 物理学 2013-02-01 Hong-Jian Feng

Magnetic domain walls can be moved by spin-polarized currents due to spin-transfer torques. This opens the possibility to use them in spintronic memory devices as, e.g., in racetrack storage. Naturally, in miniaturized devices domain walls…

介观与纳米尺度物理 · 物理学 2019-09-04 Martin Stier , Jennifer Erdmann , Michael Thorwart

We consider theoretically the effect of an inhomogeneous magnetoelectric coupling on the magnon-induced dynamics of a ferromagnet. The magnon-mediated magnetoelectric torque affects both the homogeneous magnetization and magnon-driven…

介观与纳米尺度物理 · 物理学 2016-08-25 Vetle Risinggård , Iryna Kulagina , Jacob Linder

Spin-orbit spin transfer torque allows an efficient control of magnetization by an in-plane current. Recent experiments found that the spin-orbit torque has strong dependence on the magnetization angle [Garello et al., Nature Nanotechnol.…

材料科学 · 物理学 2016-01-20 Seo-Won Lee , Kyung-Jin Lee

We demonstrate reproducible voltage induced non-volatile switching of the magnetization in an epitaxial thin Fe81Ga19 film. Switching is induced at room temperature and without the aid of an external magnetic field. This is achieved by the…

We theoretically study the interaction of magnons, quanta of spin waves, and a domain wall in a one-dimensional easy-axis antiferromagnet in the presence of an external magnetic field applied along the easy axis. To this end, we begin by…

介观与纳米尺度物理 · 物理学 2020-06-19 Pengtao Shen , Yaroslav Tserkovnyak , Se Kwon Kim
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