相关论文: Faraday cage angled-etching of nanostructures in b…
We are proposing a novel fabrication method for single crystal diamond scanning probes, exploiting the method of Faraday cage angled etching (FCAE). Electron-beam lithography (EBL) and inductively coupled plasma (ICP) etching as…
The design and engineering of photonic architectures, suitable to enhance, collect and guide light on chip is needed for applications in quantum photonics and quantum optomechanics. In this work we apply a Faraday cage based oblique angle…
Single-crystal {\alpha}-quartz, one of the most widely used piezoelectric materials, has enabled a wide range of timing applications. Owing to the fact that integrated thin-film based quartz platform is not available, most of these…
We have analyzed analytically the Faraday rotation of an electromagnetic wave for magnetoactive thin metallic film with a nanostructured surface profile. Periodical as well as random surface profiles were considered. The plasmon…
The light output of deep ultraviolet (UV-C) AlGaN light-emitting diodes (LEDs) is limited due to their poor light extraction efficiency (LEE). To improve the LEE of AlGaN LEDs, we developed a fabrication technology to process AlGaN LEDs…
Carbon nanotubes are of potential interest as heterogeneous catalysis supports, in part because they offer a high surface area hexagonal array of carbon atoms for columnar or epitaxial attachment. Fringe visibility modeling of electron…
Breakthroughs extending nanostructure engineering beyond what is possible with current fabrication techniques will be crucial for enabling next-generation nanotechnologies. Nanoepitaxy of strain-engineered bent nanowire heterostructures…
Field emission cathodes (FECs) are attractive for the next generation of injectors due to their ability to provide high current density bright beams with low intrinsic emittance. One application of FECs worthy of special attention is to…
The strong fascination exerted by the binary compound of FeSe demands reliable engineering protocols and more effective approaches towards inducing superconductivity in FeSe thin films. Our study addresses the peculiarities in pulsed laser…
Silicene is one of the most promising 2D materials for the realization of next-generation electronic devices, owing to its high carrier mobility and bandgap tunability through the imposition of an external electric field. To exploit this…
Additive manufacturing (AM) enables the development of high-performance architected cellular materials, emphasizing the growing importance of establishing programmable and predictable energy absorption capabilities. This study evaluates the…
Inverse design coupled with adjoint optimization is a powerful method to design on-chip nanophotonic devices with multi-wavelength and multi-mode optical functionalities. Although only two simulations are required in each iteration of this…
Fabrication of porous GaN distributed Bragg reflectors (DBRs) via the selective electrochemical etching (ECE) of conductive Si-doped layers, separated by non-intentionally doped (NID) layers, provides a straightforward methodology for…
Thin-film lithium niobate (TFLN) waveguides are promising for efficient second-harmonic generation (SHG) owing to their strong optical confinement and large second-order nonlinearity. However, robust fabrication of high-efficiency devices…
Newest developments in nuclear fission and fusion technology as well as planned long-distance space missions demand novel materials to withstand harsh, irradiative environments. Radiation-induced hardening and embrittlement are a concern…
Precise control of ion energy distribution functions (IEDF) is crucial for selectivity as well as control over sputter rate and substrate damage in nanoscale plasma processes. In this work, a low frequency (100 kHz) tailored…
Molecular beam epitaxy enables the growth of thin film materials with novel properties and functionalities. Typically, the lattice constants of films and substrates are designed to match to minimise disorders and strains. However,…
Anisotropic etching is a widely used process in semiconductor manufacturing, in particular for micro- and nano-scale texturing of silicon surfaces for black silicon production. The typical process of plasma-assisted etching uses energetic…
A few theoretical models predict Fe to display both ferromagnetic and antiferromagnetic phases, depending on the volume of the unit cell. A proper choice of the substrate allows the growth of thin Fe overlayers with structures different…
Reliable and precise etching of silicon nanostructures with ultra-high aspect ratios is required in many fields. Metal assisted chemical etching (MacEtch) in vapor is a plasma-free etching method that attracts considerable attention owing…