相关论文: Quantum critical magneto-transport at a continuous…

In contrast to the first-order correlation-driven Mott metal-insulator transition (MIT), contin- uous disorder-driven transitions are intrinsically quantum critical. Here, we investigate transport quantum criticality in the Falicov-Kimball…

In contrast to the Landau paradigm, a metal-insulator transition (MIT), driven purely by competition between itinerance and localization and unaccompanied by any conventional (e.g, magnetic) order-disorder instabilities, admits no obvious…

We use geometric considerations to study transport properties, such as the conductivity and Hall coefficient, near the onset of a nesting-driven spin density wave in a simple metal. In particular, motivated by recent experiments on…

Using Ioffe-Regel-Mott (IRM) criterion for strong localization crossover in disordered doped 2D electron systems, we theoretically study the relationships among the three key experimentally determined localization quantities: critical…

We present a detailed analysis of the critical behavior close to the Mott-Anderson transition. Our findings are based on a combination of numerical and analytical results obtained within the framework of Typical-Medium Theory (TMT-DMFT) -…

We formulate a quantum embedding algorithm in real-space for the simultaneous theoretical treatment of nonlocal electronic correlations and disorder, the coherent cellular dynamical mean-field theory (C-CDMFT). This algorithm combines the…

According to recent arguments by the author, the conformal field theory (CFT) describing the scaling limit of the integer quantum Hall plateau transition is a deformed level-4 Wess-Zumino-Novikov-Witten model with Riemannian target space…

We investigate the finite-size scaling of the boundary quantum geometric tensor (QGT) numerically close to the Anderson localization transition in the presence of small external magnetic fields. The QGT exhibits universal scaling and…

We discuss a recent mapping of the Anderson-Mott metal-insulator transition onto a random field magnet problem. The most important new idea introduced is to describe the metal-insulator transition in terms of an order parameter expansion…

Low-disorder and high-mobility 2D electron (or hole) systems undergo an apparent metal-insulator-transition (MIT) at low temperatures as the carrier density (n) is varied. In some situations, the 2D MIT can be caused at a fixed low carrier…

We perform a systematic study of incoherent transport in the high temperature crossover region of the half-filled one-band Hubbard model. We demonstrate that the family of resistivity curves displays characteristic quantum critical scaling…

We report a new attractive critical point occurring in the Anderson localization scaling flow of symplectic models on fractals. The scaling theory of Anderson localization predicts that in disordered symplectic two-dimensional systems weak…

We study dynamical scaling associated with a Kondo-breakdown quantum critical point (KB-QCP) of the periodic Anderson model, treated by two-site cellular dynamical mean-field theory (2CDMFT). In the quantum critical region, the staggered…

We clarify novel forms of scaling functions of conductance, critical conductance distribution and localization length in a disorder-driven quantum phase transition between band insulator and Weyl semimetal phases. Quantum criticality of the…

We report magnetoresistance measurements over an extensive temperature range (0.1 K $\leq T \leq$ 100 K) in a disordered ferromagnetic semiconductor (\gma). The study focuses on a series of metallic \gma~ epilayers that lie in the vicinity…

Quantum criticality of metal-insulator transitions in correlated electron systems is shownto belong to an unconventional universality class with violation of Ginzburg-Landau-Wilson(GLW) scheme formulated for symmetry breaking transitions.…

We consider the critical $O(N)$ model in the presence of an external magnetic field localized in space. This setup can potentially be realized in quantum simulators and in some liquid mixtures. The external field can be understood as a…

We study the quantum phase transition in $f$-electron systems as a quantum Lifshitz transition driven by selective Mott localization in a realistic extended Anderson lattice model. Using DMFT, we find that a quantum critical {\it phase}…

We present the carrier transport properties in the vicinity of a doping-driven Mott transition observed at a field-effect transistor (FET) channel using a single crystal of the typical two-dimensional organic Mott insulator…

We discuss the recently discovered two-dimensional metal-insulator transition in zero magnetic field in the light of the scaling theory of localization. We demonstrate that the observed symmetry relating conductivity and resistivity follows…