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相关论文: Polarization and valley switching in monolayer gro…

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The two-dimensional ferroelectrics GeS, GeSe, SnS and SnSe are expected to have large spontaneous in-plane electric polarization and enhanced shift-current response. Using density functional methods, we show that these materials also…

介观与纳米尺度物理 · 物理学 2017-10-03 Suman Raj Panday , Benjamin M. Fregoso

The concept of ferrovalley materials has been proposed very recently. The existence of spontaneous valley polarization, resulting from ferromagnetism, in such hexagonal two-dimensional materials makes nonvolatile valleytronic applications…

材料科学 · 物理学 2018-07-11 Xin-Wei Shen , Wen-Yi Tong , Shi-Jing Gong , Chun-Gang Duan

Altermagnets represent a newly identified third class of collinear magnets and have recently emerged as a focal point in condensed matter physics. In this work, through first-principles calculations and theoretical analysis, we identify…

材料科学 · 物理学 2025-12-15 An-Dong Fan , Yong-Kun Wang , Jin-Yang Li , Si Li

The concept of valleytronics has recently gained considerable research attention due to its intriguing physical phenomena and practical applications in optoelectronics and quantum information. In this study, by employing GW-BSE calculations…

材料科学 · 物理学 2024-01-22 Vo Khuong Dien , Pham Thi Bich Thao , Nguyen Thi Han , Nguyen Thanh Tien

Using density functional theory, we explore the possibility of two monolayer monochalcogenides, namely, MoS and WS (buckled and puckered). Our results on cohesive energy and phonon dispersion predict that the buckled structures of both MoS…

材料科学 · 物理学 2019-09-04 Dhanshree Pandey , Aparna Chakrabarti

The advancement of two-dimensional polar metals tends to be limited by the incompatibility between electric polarity and metallicity as well as dimension reduction. Here, we report polar and metallic Janus monolayers of MoSi$_2$N$_4$ family…

材料科学 · 物理学 2023-06-13 Yan Yin , Qihua Gong , Min Yi , Wanlin Guo

We use first principles calculations to investigate the lattice properties of group-IV monochalcogenides. These include static dielectric permittivity, elastic and piezoelectric tensors. For the monolayer, it is found that the static…

介观与纳米尺度物理 · 物理学 2016-01-20 Lídia C. Gomes , A. Carvalho , A. H. Castro Neto

Two-dimensional materials with ferroelectric properties break the size effect of conventional ferroelectric materials and unlock unprecedented potentials of ferroelectric-related application at small length scales. In this work, using…

材料科学 · 物理学 2022-03-25 Bo Xu , Junkai Deng , Xiangdong Ding , Jun Sun , Jefferson Zhe Liu

Two-dimensional materials that exhibit spontaneous electric polarization are of notable interest for functional materials. However, despite many two-dimensional polar materials are predicted in theory, the number of experimentally confirmed…

材料科学 · 物理学 2020-11-04 Weiwei Gao , James R Chelikowsky

Electronic and spintronic devices rely on the fact that free charge carriers in solids carry electric charge and spin, respectively. There are, however, other properties of charge carriers that might be exploited in new families of devices.…

介观与纳米尺度物理 · 物理学 2015-06-05 Kin Fai Mak , Keliang He , Jie Shan , Tony F. Heinz

Recently synthesized novel phase of germanium selenide ({\gamma}-GeSe) adopts a hexagonal lattice and a surprisingly high conductivity than graphite. This triggers great interests in exploring its potential for thermoelectric applications.…

材料科学 · 物理学 2023-08-11 Zheng Shu , Bowen Wang , Xiangyue Cui , Xuefei Yan , Hejin Yan , Huaxian Jia , Yongqing Cai

In a recent work, new two-dimensional materials, the monolayer MoSi$_{2}$N$_{4}$ and WSi$_{2}$N$_{4}$, have been successfully synthesized in experiment, and several other monolayer materials with the similar structure, such as…

材料科学 · 物理学 2021-01-01 Si Li , Weikang Wu , Xiaolong Feng , Shan Guan , Wanxiang Feng , Yugui Yao , Shengyuan A. Yang

Low-dimensional multiferroic materials hold great promises in miniaturized device applications such as nanoscale transducers, actuators, sensors, photovoltaics, and nonvolatile memories. Here, using first-principles theory we predict that…

材料科学 · 物理学 2017-01-18 Hua Wang , Xiaofeng Qian

The optical selection rules obeyed by two-dimensional materials with spin-valley coupling enable the selective excitation of carriers. We show that six members of the monolayer MA2Z4 (M = Mo and W; A = C, Si, and Ge; Z = N, P, and As)…

Monolayer transition metal dichalcogenides have emerged as prominent candidates to explore the complex interplay between the spin and the valleys degrees of freedom. The strong spin-orbit interaction and broken inversion symmetry within…

Group-IV monochalcogenides are emerging as a new class of layered materials beyond graphene, transition metal dichalcogenides (TMDCs), and black phosphorus (BP). In this paper, we report experimental and theoretical investigations of the…

介观与纳米尺度物理 · 物理学 2017-08-23 Wui Chung Yap , Zhengfeng Yang , Mehrshad Mehboudi , Jia-An Yan , Salvador Barraza-Lopez , Wenjuan Zhu

We show that inversion symmetry breaking together with spin-orbit coupling leads to coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides, making possible controls of spin and valley in these 2D materials.…

介观与纳米尺度物理 · 物理学 2012-05-09 Di Xiao , Gui-Bin Liu , Wanxiang Feng , Xiaodong Xu , Wang Yao

The family of group IV-VI monochalcogenides has an atomically puckered layered structure, and their atomic bond configuration suggests the possibility for the realization of various polymorphs. Here, we report the synthesis of the first…

The valley-related multiple topological phase transitions attracted significant attention due to their providing significant opportunities for fundamental research and practical applications. However, unfortunately, to date there is no real…

介观与纳米尺度物理 · 物理学 2023-05-24 Ping Li , Xiao Yang , Qing-Song Jiang , Yin-Zhong Wu , Wei Xun

Two-dimensional (2D) materials may have potential applications in thermoelectric devices. In this work, we systematically investigate the thermoelectric properties of orthorhombic group IV-VI monolayers $\mathrm{AB}$ (A=Ge and Sn; B=S and…

材料科学 · 物理学 2017-02-01 San-Dong Guo