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Dependency of energy bandgap (Eg) of bilayer armchair graphene nanoribbons (AGNRB) on their widths, interlayer distance (D) and edge doping concentration of boron/nitrogen is investigated using local density approximation and compare to the…

材料科学 · 物理学 2008-06-20 Kai-Tak Lam , Gengchiau Liang

We probe electro-mechanical properties of InAs nanowire (diameter ~ 100 nm) resonators where the suspended nanowire (NW) is also the active channel of a field effect transistor (FET). We observe and explain the non-monotonic dispersion of…

The three dimensional carrier confinement in GaN nanodiscs embedded in GaN/AlGaN nanowires and its effect on their photoluminescence properties is analyzed for Al concentrations between x = 0.08 and 1. Structural analysis by high resolution…

介观与纳米尺度物理 · 物理学 2011-11-16 F. Furtmayr , J. Teubert , P. Becker , S. Conesa-Boj , J. R. Morante , J. Arbiol , A. Chernikov , S. Schäfer , S. Chatterjee , M. Eickhoff

Evaluation of residual elastic strain within the bulk of engineering components or natural objects is a challenging task, since in general it requires mapping a six-component tensor quantity in three dimensions. A further challenge concerns…

This paper is devoted to the inverse design of strained graphene surfaces for the control of electrons in the semi-classical optical-like regime. Assuming that charge carriers are described by the Dirac equation in curved-space and…

介观与纳米尺度物理 · 物理学 2021-12-03 E. Lorin , F. Fillion-Gourdeau , S. Maclean

We investigate the axial and radial growth of GaN nanowires upon a variation of the Ga flux during molecular beam epitaxial growth. An increase in the Ga flux promotes radial growth without affecting the axial growth rate. In contrast, a…

We demonstrate how shape-induced strain can be used to control antiferromagnetic order in NiO/Pt thin films. For rectangular elements patterned along the easy and hard magnetocrystalline anisotropy axes of our film, we observe different…

Structural distortions in nano-materials can induce dramatic changes in their electronic properties. This situation is well manifested in graphene, a two-dimensional honeycomb structure of carbon atoms with only one atomic layer thickness.…

介观与纳米尺度物理 · 物理学 2016-08-17 N. -C. Yeh , C. -C. Hsu , M. L. Teague , J. -Q. Wang , D. A. Boyd , C. -C. Chen

Application of isotropic pressure or uniaxial strain alters the elastic properties of materials; sufficiently large strains can drive structural transformations. Linear elasticity describes stability against infinitesimal strains, while…

材料科学 · 物理学 2022-04-22 Vishnu Raghuraman , Michael Widom , Michael C. Gao

Van der Waals heteroepitaxy allows deterministic control over lattice mismatch or azimuthal orientation between atomic layers to produce long wavelength superlattices. The resulting electronic phases depend critically on the superlattice…

Many printed electronic applications require strain-independent electrical properties to ensure deformation-independent performance. Thus, developing printed, flexible devices using 2D and other nanomaterials will require an understanding…

介观与纳米尺度物理 · 物理学 2024-10-29 Eoin Caffrey , Tian Carey , Luke Doolan , Anthony Dawson , Emmet Coleman , Zdenek Sofer , Oran Cassidy , Cian Gabbett , Jonathan N. Coleman

Strain can affect the morphology of a crystal surface, and cause modifications of its reconstruction even when weak, as in the case of mechanical bending. We carried out calculations of strain-dependent surface free energy and direct…

材料科学 · 物理学 2007-05-23 U. Tartaglino , E. Tosatti , D. Passerone , F. Ercolessi

High quantum yield, low transverse energy spread and prompt response time make GaAs activated to negative electron affnity, an ideal candidate for a photocathode in high brightness photoinjectors. Even after decades of investigation, the…

加速器物理 · 物理学 2015-05-27 Siddharth Karkare , Ivan Bazarov

Effect of misfit strain in the layers of (Ga,Mn)(Bi,As) quaternary diluted magnetic semiconductor, epitaxially grown on either GaAs substrate or (In,Ga)As buffer, on their magnetic and magneto-transport properties has been investigated.…

Scaling wide-band-gap semiconductors to the ultrathin limit offers a transformative pathway for power electronics, with gallium nitride (GaN) representing a cornerstone material in this class. However, the operational resilience and…

材料科学 · 物理学 2026-05-27 Yujia Tian , Devesh R. Kripalani , Ming Xue , Kun Zhou

We have revealed the decisive role of grain-boundary-induced strain fields in electron scattering in polycrystalline graphene. To this end, we have formulated the model based on Boltzmann transport theory which properly takes into account…

材料科学 · 物理学 2022-05-24 S. E. Krasavin , V. A. Osipov

We combine quantum-chemical calculations and molecular dynamics simulations to consider aqueous ion flow across non-axisymmetric nanopores in monolayer graphene and MoS$_2$. When the pore-containing membrane is subject to uniaxial tensile…

应用物理 · 物理学 2020-04-30 A. Smolyanitsky , A. Fang , A. F. Kazakov , E. Paulechka

The local variation in inter-atomic distances, or local lattice strain often influences significantly material properties of nanoparticles. Strain measurement with ~1% precision is provided by recent atomic-resolution electron microscopy.…

材料科学 · 物理学 2021-07-09 Kohei Aso , Jens Maebe , Xuan Quy Tran , Tomokazu Yamamoto , Yoshifumi Oshima , Syo Matsumura

The effect of the random magnetic field distribution on the phase diagrams and ground state magnetizations of the Ising nanowire is investigated with effective field theory with correlations. Trimodal distribution chosen as a random…

统计力学 · 物理学 2016-08-14 Ümit Akıncı

This paper presents a proof-of-concept demonstration of triaxial strain tomography from Bragg-edge neutron imaging within a three-dimensional sample. Bragg-edge neutron transmission can provide high-resolution images of the average through…