相关论文: Effect of doping and In-composition on gain of lon…

Four wave mixing analysis is stated for quantum dot semiconductor optical amplifiers (QD SOAs) using the propagation equations (including nonlinear propagation contribution) coupled with the QD rate equations under the saturation…

Effect of doped layer placed in structures with indirect band-gap (In,Al)As/AlAs quantum dots (QDs) on heterointerface sharpness is investigated. We demonstrate that growth of n (p) doped layer below QDs sheet leads to pronounced…

The influences of Si sheet doping levels on the properties of InAs/GaAs quantum dots (QDs) are investigated by atomic force microscopy (AFM) and photoluminescence (PL). AFM measurements reveal that Si sheet doping doesn't change the…

Using three-dimensional k.p calculation including strain and piezoelectricity, we showed that the size of the quantum dot (QD) in the growth direction determines the influence of the (In,Ga)As capping layer on the optical properties of…

Modifying the optoelectronic properties of nanostructured materials through introduction of dopant atoms has attracted intense interest. Nevertheless, the approaches employed are often trial and error, preventing rational design. We…

Integrating light emitters based on III-V materials with silicon-based electronics is crucial for further increase in data transfer rates in communication systems since the indirect bandgap of silicon prevents its direct use as a light…

The experimental Mn K-edge x-ray absorption spectra of La$_{1-x}$Sr$_x$MnO$_{3}$, $x$ = 0 - 0.7 are compared with the band structure calculations using spin polarized density functional theory. It is explicitly shown that there is a…

We report a correlative microscopy study of a sample containing three stacks of InGaN/GaN quantum dots (QDs) grown at different substrate temperature, each stack consisting of 3 layers of QDs. Decreasing the substrate temperature along the…

Realizing solution processed quantum dot (QD) lasers is one of the holy-grails of nanoscience. The reason that QD lasers are not yet commercialized is that the lasing threshold is too high: one needs > 1 exciton per QD, which is hard to…

Using 3D k.p calculation including strain and piezoelectricity we predict variation of electronic and optical properties of InAs/GaAs quantum dots (QDs) with the substrate orientation. The QD transition energies are obtained for high index…

Semiconductor nanolasers based on micro disks, photonic crystal cavities, and metallo-dielectric nanocavities have been studied during the last decade for on-chip light source applications. However, practical realization of low threshold,…

We investigated the current-voltage characteristic of InAs/GaAs quantum dot intermediate band solar cells (QD IBSCs) with different n-type doping density in the QD layer. The n-type doping evidently increases the open circuit voltage,…

Silicon quantum dots are nanomaterials that are attractive candidates for photovoltaic applications. Doping of these materials creates p-n junctions and is important for solar cells. In this work, we present a first-principles study of the…

First principles calculations through density functional theory (DFT)+$U$ method were performed to assess the effect of Li interstitial doping on the optoelectronic properties of NiO and of cubic, hexagonal, and monoclinic WO$_3$. The…

We present here results of our first principles studies of the sulfur doping effects on the electronic and geometric structures of graphitic carbon nitride (g-C3N4). Using the Ab initio thermodynamics approach combined with some kinetic…

Doped heavy metal-free III-V semiconductor nanocrystal quantum dots are of great interest both from the fundamental aspects of doping in highly confined structures, and from the applicative side of utilizing such building blocks in the…

Computational studies based on 6 band k$\cdot$p theory are employed on lens-shaped III-nitride quantum dots (QDs) with focus on the polarization properties of the optical interband transitions. The results predict pronounced linear…

In this paper, we study band-to-band and intersubband characteristics of GaN/AlN heterostructures (planar and nanowires) structurally designed to absorb in the short-wavelength infrared region, particularly at 1.55 microns. We compare the…

The n-type tensile-strained Ge can be used as high-efficient light-emitting materials. To reveal the influence of n-type doping on the electronic structure of Ge, we have computed the electronic structure of P, As and Sb doped Ge using…

We study the origin of bimodal emission in AlGaN/AlN QD superlattices displaying high internal quantum efficiency (around 50%) in the 230-300 nm spectral range. The secondary emission at longer wavelengths is linked to the presence of…