相关论文: Simulations of a silicon pixel based on MOS Deep T…
A deep level transient spectroscopy (DLTS) study of defects created by low-fluence, low-energy ion implantation for development of ion-implanted silicon field-effect transistors for spin-dependent transport experiments is presented.…
Vertical graphene-based device concepts that rely on quantum mechanical tunneling are intensely being discussed in literature for applications in electronics and optoelectronics. In this work, the carrier transport mechanisms in…
Surface damage caused by ionizing radiation in SiO$_2$ passivated silicon particle detectors consists mainly of the accumulation of a positively charged layer along with trapped-oxide-charge and interface traps inside the oxide and close to…
A graphene field effect transistor, where the active area is made of monolayer large-area graphene, is simulated including a full 2D Poisson equation and a drift-diffusion model with mobilities deduced by a direct numerical solution of the…
Trapped Rydberg ions are a promising novel approach to quantum computing and simulations. They are envisaged to combine the exquisite control of trapped ion qubits with the fast two-qubit Rydberg gates already demonstrated in neutral atom…
We introduce a deep-recessed gate architecture in $\beta$-Ga$_2$O$_3$ delta-doped field effect transistors for improvement in DC-RF dispersion and breakdown properties. The device design incorporates an unintentionally doped…
Active edge p-on-p silicon pixel detectors with thickness of 100 $\mu$m were fabricated on 150 mm Float zone silicon wafers at VTT. By combining measured results and TCAD simulations, a detailed study of electric field distributions and…
Generating quantum entanglement in large systems on time scales much shorter than the coherence time is key to powerful quantum simulation and computation. Trapped ions are among the most accurately controlled and best isolated quantum…
Deep Ion Beam Lithography (DIBL) has been used for the direct writing of buried graphitic regions in monocrystalline diamond with micrometric resolution. Aiming at the development and the characterization of a fully ion-beam-micromachined…
We present a scaling theory of two-dimensional (2D) field effect transistors (FETs). For devices with channel thickness less than 4 nm, the device electrostatics is dominated by the physical gate oxide thickness and not the effective oxide…
Field-effect transistors (FETs) with single gates are adversely affected by short channel effects such as drain-induced barrier lowering (DIBL) and increases in the magnitude of sub-threshold swing as the channel length is reduced.…
We describe a hybrid laser-microwave scheme to implement two-qubit geometric phase gates in crystals of trapped ions. The proposed gates can attain errors below the fault-tolerance threshold in the presence of thermal, dephasing,…
An intrinsic electron injection model for linear band two-dimensional (2D) materials, like graphene, is presented and its coupling to a recently developed quantum time-dependent Monte Carlo simulator for electron devices, based on the use…
Deep-circuit quantum computation, like Shor's algorithm, is undermined by error accumulation, and near-future quantum techniques are far from adequate for full-fledged quantum error correction. Instead of resorting to shallow-circuit…
Intrusion detection poses a significant challenge within expansive and persistently interconnected environments. As malicious code continues to advance and sophisticated attack methodologies proliferate, various advanced deep learning-based…
We discuss the effects of gigahertz photon irradiation on a degenerately phosphorous-doped silicon quantum dot, in particular, the creation of voltage offsets on gate leads and the tunneling of one or two electrons via Coulomb blockade…
Deep Neural Networks have proven to be highly accurate at a variety of tasks in recent years. The benefits of Deep Neural Networks have also been embraced in power grids to detect False Data Injection Attacks (FDIA) while conducting…
Fringing field has to be taken into account in the formulation of electrostatic parallel-plate actuators when the gap separating the electrodes is comparable to the geometrical dimensions of the moving plate. Even in this case, the existing…
Phase change materials are exploited in several enabling technologies such as storage class memories, neuromorphic devices and memories embedded in microcontrollers. A key functional property for these applications is the fast crystal…
DEPFET active pixel sensors are a well-developed technology for vertex detectors at future colliders. Extensive test beam campaigns have proven the excellent performance of these devices, and their radiation hardness has been thoroughly…