相关论文: Spin g-factor due to electronic interactions in gr…
We study theoretically the renormalization of the spin-orbit coupling constant of two-dimensional electrons by electron-electron interactions. We demonstrate that, similarly to the $g$ factor, the renormalization corresponds to the…
We present transport experiments performed in high quality quantum point contacts embedded in a GaAs two-dimensional hole gas. The strong spin-orbit interaction results in peculiar transport phenomena, including the previously observed…
We report our theoretically investigation on the spin-orbit coupling and $g$-factor of the $X$-valley in cubic GaN. We find that the spin-orbit coupling coefficient from $sp^3d^5s^\ast$ tight-binding model is 0.029\,eV$\cdot${\AA}, which is…
We demonstrate that hexagonal graphene nanoflakes with zigzag edges display quantum interference (QI) patterns analogous to benzene molecular junctions. In contrast with graphene sheets, these nanoflakes also host magnetism. The cooperative…
In contrast to recent description [Phys. Rev. Lett. 106 (2011)116803], we show that pseudo spin in graphene is not completely a real angular momentum. The pseudo spin only in the direction perpendicular to graphene sheet is real angular…
We point out the existence of finite charge and spin Hall conductivities of graphene in the presence of a spin orbit interaction (SOI) and localized magnetic impurities. The SOI in graphene results in different transverse forces on the two…
The temperature dependence of the electron spin $g$ factor in GaAs is investigated experimentally and theoretically. Experimentally, the $g$ factor was measured using time-resolved Faraday rotation due to Larmor precession of electron spins…
We study the collective charge excitations (plasmons) in spin polarized graphene, and derive explicit expressions for their dispersion in the undamped regime. From this, we are able to calculate the critical wave vector beyond which the…
We identify the presence of monoatomic steps at the Si/SiGe or Si/SiO$_2$ interface as a dominant source of variations in the dephasing time of Si quantum dot (QD) spin qubits. First, using atomistc tight-binding calculations we show that…
The growing library of two-dimensional layered materials is providing researchers with a wealth of opportunity to explore and tune physical phenomena at the nanoscale. Here, we review the experimental and theoretical state-of-art concerning…
Unlike regular electron spin, the pseudospin degeneracy of Fermi points in graphene does not couple directly to magnetic field. Therefore, graphene provides a natural vehicle to observe the integral and fractional quantum Hall physics in an…
Using magnetocapacitance data in tilted magnetic fields, we directly determine the chemical potential jump in a strongly correlated two-dimensional electron system in silicon when the filling factor traverses the spin and the cyclotron…
We study collective electronic excitations in graphene in the integer quantum Hall regime, concentrating mainly on excitations with spin reversal such as spin-flip and spin-wave excitations. We show that these excitations are correctly…
We study the effects of the interaction between electrons and holes on the conductance G of quasi-one-dimensional graphene systems. We first consider as a benchmark the limit in which all interactions are negligible, recovering the…
Due to its fourfold spin-valley degeneracy, graphene in a strong magnetic field may be viewed as a four-component quantum Hall system. We investigate the consequences of this particular structure on a possible, yet unobserved, fractional…
Adsorption of gaseous species, and in particular of hydrogen atoms, on graphene is an important process for the chemistry of this material. At the equilibrium geometry, the H atom is covalently bonded to a carbon that puckers out from the…
The electron g-factor measured in a quantum point contact by source-drain bias spectroscopy is significantly larger than its value in a two-dimensional electron gas. This enhancement, established experimentally in numerous studies, is an…
We study the effects of magnetic and electric fields on the g-factors of spins confined in a two-electron InAs nanowire double quantum dot. Spin sensitive measurements are performed by monitoring the leakage current in the Pauli blockade…
Interfacial interactions allow the electronic properties of graphene to be modified, as recently demonstrated by the appearance of satellite Dirac cones in the band structure of graphene on hexagonal boron nitride (hBN) substrates. Ongoing…
Inducing sizable spin--orbit interactions in graphene by proximity effect is establishing as a successful route to harnessing two-dimensional Dirac fermions for spintronics. Semiconducting transition metal dichalcogenides (TMDs) are an…