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(Ga,Mn)As is a paradigm diluted magnetic semiconductor which shows ferromagnetism induced by doped hole carriers. With a few controversial models emerged from numerous experimental and theoretical studies, the mechanism of the…

The interplay between disorder and spin polarization in a GaMnAs thin layer results into spin-polarized impurity hole bands. A figure of merit is defined to label the hole state as being extended or localized. The calculation leads to a…

材料科学 · 物理学 2016-09-08 E. Dias Cabral , M. A. Bosellli , A. T. da Cunha Lima , I. C. da Cunha Lima

Ultrasnsitive multi-mode electron spin resonance spectroscopy in the $SrLaAlO_4$ dielectric resonator at $20~mK$ reveals ferromagnetic states of $Mn^{4+}$ impurity ion. The formation of ferromagnetic states in the $MnO_6$ complex implies to…

其他凝聚态物理 · 物理学 2018-04-18 M. A. Hosain

Recent experiments [1] suggest that the ferromagnetism (FM) in GaAs: Mn is determined by the impurity band rather than holes in the valence band. We discuss here the physical mechanism of FM mediated by the carriers in impurity band, where…

介观与纳米尺度物理 · 物理学 2012-08-15 V. Fleurov , K. Kikoin , A. Zunger

InAs/GaSb hosts a broken gap band alignment that has been shown to generate helical topological edge states. Upon the introduction of Mn into the structure, it has been predicted to host a quantized anomalous Hall effect. Here, we show that…

Electron paramagnetic resonance was used to investigate Mn impurity in Bi$_2$Se$_3$ topological insulator grown by the vertical Bridgman method. Mn in high-spin S = 5/2, Mn$^2$$^+$ configuration, was detected regardless of the conductivity…

The low energy band structure of the FeAs based superconductors is fitted by a tight binding model with two Fe ions per unit cell and two degenerate orbitals per Fe ion. Based on this, superconductivity with extended s-wave pairing symmetry…

超导电性 · 物理学 2013-05-29 Degang Zhang

We present results on the direct spatial mapping of the wave-function of a hole bound to a Mn acceptor in GaAs. To investigate individual Mn dopants at the atomic scale in both ionized and neutral configurations, we used a room temperature…

材料科学 · 物理学 2007-05-23 A. M. Yakunin , A. Yu. Silov , P. M. Koenraad , W. Van Roy , J. De Boeck , J. H. Wolter

We analyze microscopically the valence and impurity band models of ferromagnetic (Ga,Mn)As. We find that the tight-binding Anderson approach with conventional parameterization and the full potential LDA+U calculations give a very similar…

The band structure of a prototypical dilute ferromagnetic semiconductor, Ga$_{1-x}$Mn$_{x}$As, is studied across the phase diagram via optical spectroscopy. We prove that the Fermi energy ($E_{F}$) resides in a Mn induced impurity band…

This work reports theoretical and experimental study of the X-ray absorption near-edge structure (XANES) at the Mn K-edge in (Ga,Mn)As diluted magnetic semiconductors. The spectra have been calculated from the first-principles using FLAPW…

材料科学 · 物理学 2010-03-24 N. A. Goncharuk , L. Smrcka , J. Kucera , K. Olejnik , V. Novak , Z. Matej , L. Nichtova , V. Holy

The effective g-factor ($g^{*}$) of a dilute interacting two-dimensional electron system is expected to increase with respect to its bare value as the density is lowered, and to eventually diverge as the system makes a transition to a…

介观与纳米尺度物理 · 物理学 2009-11-07 E. Tutuc , S. Melinte , M. Shayegan

The diluted (Ga,Mn)As became a model ferromagnetic semiconductor, however there is still a disagreement on the source of its magnetism. The divergences arise from the results indicating that the holes mediated ferromagnetism reside in the…

Combining density-functional theory calculations and microscopic tight-binding models, we investigate theoretically the electronic and magnetic properties of individual substitutional transition-metal impurities (Mn and Fe) positioned in…

材料科学 · 物理学 2014-04-18 M. R. Mahani , M. Fhokrul Islam , A. Pertsova , C. M. Canali

The Fermi level position in (Ga,Mn)N has been determined from the period-analysis of GaN-related Franz-Keldysh oscillation obtained by contactless electroreflectance in a series of carefully prepared by molecular beam epitaxy…

材料科学 · 物理学 2017-12-19 L. Janicki , G. Kunert , M. Sawicki , E. Piskorska-Hommel , K. Gas , R. Jakiela , D. Hommel , R. Kudrawiec

A computational study of the electron paramagnetic resonance (EPR) $g$-tensors and hyperfine tensors in Mg and Zn doped $\beta$-Ga$_2$O$_3$ is presented. While Mg has been found previously to prefer the octahedral site, we find here that Zn…

材料科学 · 物理学 2019-05-16 Dmitry Skachkov , Walter R. L. Lambrecht

The X-ray absorption near-edge structure (XANES) at the Mn K-edge in the (Ga,Mn)As magnetic semiconductor was simulated using the full potential linearized augmented plane wave (FLAPW) method including the core-hole effect. The calculations…

介观与纳米尺度物理 · 物理学 2010-03-24 N. A. Goncharuk , J. Kucera , L. Smrcka

After two decades from the discovery of ferromagnetism in Mn-doped GaAs, its origin is still debated, and many doubts are related to the electronic structure. Here we report an experimental and theoretical study of the valence electron…

强关联电子 · 物理学 2014-07-29 I. Di Marco , P. Thunström , M. I. Katsnelson , J. Sadowski , K. Karlsson , S. Lebègue , J. Kanski , O. Eriksson

We use the numerical renormalization group method to study an Anderson impurity in a conduction band with the density of states varying as rho(omega) \propto |omega|^r with r>0. We find two different fixed points: a local-moment fixed point…

强关联电子 · 物理学 2009-10-30 R. Bulla , Th. Pruschke , A. C. Hewson

A theory of collective states in a magnetically quantized two-dimensional electron gas (2DEG) with half-filled Landau level (quantized Hall ferromagnet) in the presence of magnetic 3d impurities is developed. The spectrum of bound and…

介观与纳米尺度物理 · 物理学 2009-11-13 S. Dickmann , V. Fleurov , K. Kikoin
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