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Two-dimensional stacking fault defects embedded in a bulk crystal can provide a homogeneous trapping potential for carriers and excitons. Here we utilize state-of-the-art structural imaging coupled with density functional and effective-mass…

We study laterally trapped dipolar exciton ensembles in coupled GaAs quantum wells at high magnetic fields in the Faraday configuration. In photoluminescence experiments, we identify three magnetic field regimes. At low fields, the exciton…

量子气体 · 物理学 2017-06-28 S. Dietl , K. Kowalik-Seidl , D. Schuh , W. Wegscheider , A. W. Holleitner , U. Wurstbauer

The interaction potential of a two-dimensional system of excitons with spatially separated electron-hole layers is considered in the strong magnetic field limit. The excitons are assumed to have free dynamics in the $x$-$y$ plane, while…

介观与纳米尺度物理 · 物理学 2009-10-31 M. A. Olivares-Robles , S. E. Ulloa

Exciton problem is solved in the two-dimensional Dirac model with allowance for strong electron-hole attraction. The exciton binding energy is assumed smaller than but comparable to the band gap. The exciton wavefunction is found in the…

介观与纳米尺度物理 · 物理学 2020-10-28 N. V. Leppenen , L. E. Golub , E. L. Ivchenko

We theoretically investigate exciton-polaritons in a two-dimensional (2D) semiconductor heterostructure, where a static magnetic field is applied perpendicular to the plane. To explore the interplay between magnetic field and a strong…

介观与纳米尺度物理 · 物理学 2024-12-12 Emma Laird , Francesca M. Marchetti , Dmitry K. Efimkin , Meera M. Parish , Jesper Levinsen

We perform correlated studies of individual GaN nanowires in scanning electron microscopy combined to low temperature cathodoluminescence, microphotoluminescence, and scanning transmission electron microscopy. We show that some nanowires…

介观与纳米尺度物理 · 物理学 2014-03-18 Gilles Nogues , Thomas Auzelle , Martien Den Hertog , Bruno Gayral , Bruno Daudin

A theory of charged excitons X- in a dilute 2D electron gas in a high magnetic field is presented. In contrast to previous calculations, three bound X- states (one singlet and two triplets) are found in a narrow and symmetric GaAs quantum…

介观与纳米尺度物理 · 物理学 2009-10-31 Arkadiusz Wojs , John J. Quinn , Pawel Hawrylak

We show that a magnetic field perpendicular to an AlGaAs/GaAs coupled quantum well efficiently traps dipolar excitons and leads to the stabilization of the excitonic formation and confinement in the illumination area. Hereby, the density of…

介观与纳米尺度物理 · 物理学 2011-02-17 K. Kowalik-Seidl , X. P. Vögele , F. Seilmeier , D. Schuh , W. Wegscheider , A. W. Holleitner , J. P. Kotthaus

The quantum states of an electron-hole pair in one-dimensional semiconductors under a static electric field are theoretically analyzed using a two-band model with on-site Coulomb interaction. In the absence of static field, the electron and…

介观与纳米尺度物理 · 物理学 2026-01-09 Adriana García , Alexander López , Jorge Quereda , Francisco Domínguez-Adame

The fundamental properties of an exciton are determined by the spin, valley, energy, and spatial wavefunctions of the Coulomb bound electron and hole. In van der Waals materials, these attributes can be widely engineered through layer…

We investigate the confinement of neutral excitons in a one-dimensional (1D) potential, engineered by proximizing hBN-encapsulated monolayer MoSe$_2$ to ferroelectric domain walls (DW) in periodically poled LiNbO$_3$. Our device exploits…

介观与纳米尺度物理 · 物理学 2025-03-21 Pedro Soubelet , Yao Tong , Asier Astaburuaga Hernandez , Peirui Ji , Katia Gallo , Andreas V. Stier , Jonathan J. Finley

The trapping of excitons in a semiconductor quantum well due to a circular symmetric nonhomogeneous magnetic field is studied. The effect of the spin state of the exciton on its trapping energy is analyzed, and the importance of the…

凝聚态物理 · 物理学 2009-10-31 J. A. K. Freire , F. M. Peeters , A. Matulis , V. N. Freire , G. A. Farias

We report a two-dimensional artificial lattice for dipolar excitons confined in a GaAs double quantum well. Exploring the regime of large fillings per lattice site, we verify that the lattice depth competes with the magnitude of excitons…

介观与纳米尺度物理 · 物理学 2021-01-04 Camille Lagoin , Stephan Suffit , Mathieu Bernard , Maxime Vabre , Kenneth West , Kirk Baldwin , Loren Pfeiffer , Francois Dubin

We consider the effect of a magnetic field $B$ on the transport of neutral composite particles, excitons, in weakly disordered 2D systems. In the case of classical transport, when the interference of different paths is neglected, the…

介观与纳米尺度物理 · 物理学 2007-05-23 P. I. Arseev , A. B. Dzyubenko

Detailed theoretical study of the magneto-optical properties of weakly confining GaAs/AlGaAs quantum dots is provided. We focus on the diamagnetic coefficient and the $g$-factor of the neutral and the charged excitonic states, respectively,…

介观与纳米尺度物理 · 物理学 2020-09-16 Diana Csontosová , Petr Klenovský

Two-dimensional electron-hole gases in colloidal semiconductors have a wide variety of applications. Therefore, a proper physical understanding of these materials is of great importance. In this paper we present a detailed theoretical…

介观与纳米尺度物理 · 物理学 2019-12-18 F. García Flórez , Aditya Kulkarni , Laurens D. A. Siebbeles , H. T. C. Stoof

The properties of an exciton in a type II quantum dot are studied under the influence of a perpendicular applied magnetic field. The dot is modelled by a quantum disk with radius $R$, thickness $d$ and the electron is confined in the disk,…

介观与纳米尺度物理 · 物理学 2009-11-07 K. L. Janssens , B. Partoens , F. M. Peeters

Monolayer semiconductors are atomically thin quantum wells with strong confinement of electrons in two-dimensional (2D) plane. Here, we experimentally study the out-of-plane polarizability of excitons in hBN-encapsulated monolayer WSe$_{2}$…

介观与纳米尺度物理 · 物理学 2019-02-19 Ivan A. Verzhbitskiy , Daniele Vella , Kenji Watanabe , Takashi Taniguchi , Goki Eda

Photoluminescence data from single, self-assembled InAs/InP quantum dots in magnetic fields up to 7 T are presented. Exciton g-factors are obtained for dots of varying height, corresponding to ground state emission energies ranging from 780…

介观与纳米尺度物理 · 物理学 2009-11-13 D. Kim , W. Sheng , P. J. Poole , D. Dalacu , J. Lefebvre , J. Lapointe , M. E. Reimer , G. C. Aers , R. L. Williams

Strong electrically tunable exciton g-factors are observed in individual (Ga)InAs self-assembled quantum dots and the microscopic origin of the effect is explained. Realistic eight band k.p simulations quantitatively account for our…

介观与纳米尺度物理 · 物理学 2012-01-04 V. Jovanov , T. Eissfeller , S. Kapfinger , E. C. Clark , F. Klotz , G. Abstreiter , J. J. Finley
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