相关论文: Tunable Carrier Multiplication and Cooling in Grap…
We have performed scanning gate microscopy (SGM) on graphene field effect transistors (GFET), using a biased metallic nanowire coated with a dielectric layer as a contact mode tip and local top gate. Electrical transport through graphene at…
By using Boltzmann formalism, we show that carrier multiplication by impact ionization can take place at relatively low electric fields during electronic transport in graphene. Because of the absence of energy gap, this effect is not…
A new transport regime of photon in two-dimensional photonic crystal near the Dirac point has been demonstrated by exact numerical simulation. In this regime, the conductance of photon is inversely proportional to the thickness of sample,…
In this paper, the effect of B and N doping on the phonon induced thermal conductivity of graphene has been investigated. This study is important when one has to evaluate the usefulness of electronic properties of B and N doped graphene. We…
The effect of chemical doping of graphene films on the photovoltaic properties of the graphene/silicon Schottky junction solar cells was investigated. Thionyl chloride modification greatly enhanced the conductivity of graphene film,…
We demonstrate electrochemical top gating of graphene by using a solid polymer electrolyte. This allows to reach much higher electron and hole doping than standard back gating. In-situ Raman measurements monitor the doping. The G peak…
Thermoelectric power of a material, typically governed by its band structure and carrier density, can be varied by chemical doping that is often restricted by solubility of the dopant. Materials showing large thermoelectric power are useful…
Understanding the dynamics of photoexcited carriers is essential for advancing photoelectronic device design. Photon absorption generates electron-hole pairs, and subsequent scatterings can induce ultrafast thermalization within a…
Polarization characteristic of ultrafast carrier dynamics in multi-layer CVD-grown graphene is probed with tilted beams (with respected to the graphene plane). The graphene ultrafast carrier dynamics measurement greatly depends on both…
We show that the $d^{0}$ ferromagnetism with high Curie temperature ($T_c$) can be achieved in the electron doped hydrogenated epitaxial graphene on some certain SiC substrates through first-principles calculations. The pristine systems are…
We perform a detailed analysis of electronic polarizability of graphene with different theoretical approaches. From Kubo's linear response formalism, we give a general expression of frequency and wave-vector dependent polarizability within…
Here, we report on controlling strain in graphene by trapping molecules at the graphene-substrate interface, leveraging molecular dipole moments. Spectroscopic and transport measurements show that strain correlates with the dipole moments…
Superconductivity occurs in electrochemically doped molybdenum dichalcogenides samples thicker than four layers. While the critical temperature (Tc) strongly depends on the field effect geometry (single or double gate) and on the sample…
Patterned graphene shows substantial potential for applications in future molecular-scale integrated electronics. Environmental effects are a critical issue in a single layer material where every atom is on the surface. Especially…
We report evidence of nonequilibrium hot carriers extraction from graphene by gate-dependent photocurrent study. Scanning photocurrent excited by femtosecond pulse laser shows unusual gate dependence compared with continuous wave (CW) laser…
Graphene exhibits promise as a plasmonic material with high mode confinement that could enable efficient hot carrier extraction. We investigate the lifetimes and mean free paths of energetic carriers in free-standing graphene, graphite and…
Graphene plasmons are able to become the fundermental of novel conceptual photonic devices, resulting from their unique characteristics containing excitation at room temperature and tunable spectral selectivity in different frequencies. The…
Monolayer epitaxial graphene (EG) grown on hexagonal Si-terminated SiC substrates is intrinsically electron-doped (carrier density is about 10^13 cm^(-2)). We demonstrate a clean device fabrication process using a precious-metal protective…
Graphene is an attractive material for microelectronics applications, given such favourable electrical characteristics as high mobility, high operating frequency, and good stability. If graphene is to be implemented in electronic devices on…
We examine the robustness of the S-shaped current-voltage characteristics associated with hot-carrier-induced electrical breakdown in perforated graphene metasurfaces (PGMs) as a function of doping. The perforation of the graphene layer…