相关论文: Transformation of germanium to fluogermanates
Germanium nanowires with p- and n-dopants were synthesized by chemical vapor deposition and used to construct complementary field effect transistors . Electrical transport and x-ray photoelectron spectroscopy data are correlated to glean…
Understanding phase transitions between crystalline phases of a material is crucial for both fundamental research and potential applications such as phase-change memory. In this study, we investigate the phase transition between GeSe…
Germanium is an extremely important material used for numerous functional applications in many fields of nanotechnology. In this paper, we study the crystallization of amorphous Ge using atomistic simulations of critical nano-metric nuclei…
Germanium telluride (GeTe), a phase-change material, is known to exhibit four different structural phases: three at room temperature (one amorphous and two crystalline, $\alpha$ and $\gamma$) and one at high temperature (crystalline…
Glasses are nonequilibrium solids with properties highly dependent on their method of preparation. In vapor-deposited molecular glasses, structural organization could be readily tuned with deposition rate and substrate temperature. Herein,…
We report a study of structural and electronic properties of a germanium layer on Al(111) using scanning tunneling microscopy (STM), low energy electron diffraction and core-level photoelectron spectroscopy. Experimental results show that a…
Gallium oxide (Ga2O3) can be crystallized in several polymorphs exhibiting different physical properties. In this work, polymorphic structures consisting of the cubic defective spinel (gamma) film on the top of the monoclinic (beta)…
Electrochemical oxidation of hematite ({\alpha}-Fe2O3) nano-particulate films at 600 mV vs. Ag+/AgCl reference in KOH electrolyte forms a species at the hematite surface which causes a new transition in the upper Hubbard band between the…
Oscillatory dynamics is a key tool in optical tweezers applications. It is usually implemented by mechanical interventions that cannot be optically controlled. In this work we show that Germanium semiconductor beads behave as optically…
Classical molecular dynamics simulations are used to study the structure of densified germanium dioxide ($GeO_2$). It is found that the coordination number of germanium changes with increasing density (pressure) while pressure released…
Germanium is a strong candidate as a laser source for silicon photonics. It is widely accepted that the band structure of germanium can be altered by tensile strain so as to reduce the energy difference between its direct and indirect band…
Sol-gel deposited (010) textured polycrystalline thin films of gallium ferrite (GaFeO3 or GFO) on n-Si(100) and Pt/Si(111) substrates are characterized for room temperature multiferroism. Structural characterization using X-ray diffraction…
Germanium and silicon-germanium alloys have found entry into Si technology thanks to their compatibility with Si processing and their ability to tailor electronic properties by strain and band-gap engineering. Germanium's potential to…
The structural, magnetic, vibrational and electronic properties of single layer aluminum oxide (AlO2) are investigated by performing state-of-the-art first-principles calculations. Total energy optimization and phonon calculations reveal…
In this work we study the high pressure behaviour of liquid and glassy GeO2 by means of molecular dynamics simulations. The interaction potential, which includes dipole polarization effects, was parameterized from first-principles…
Cu-doped type-I germanium clathrate can exhibit dilute magnetism, including ferromagnetism, antiferromagnetism, and metamagnetic transitions up to 90 K. 63Cu NMR measurements confirm that these transitions are due to a dilute composition of…
Germanium is the base element in many phase-change materials, i.e. systems that can undergo reversible transformations between their crystalline and amorphous phases. They are widely used in current digital electronics and hold great…
We present a pronounced unprecedented surface modification of a crystalline Ge layer under heavy ion irradiation with a Ge ion beam at high energy of 2.5 MeV. Under the irradiation conditions, the Ge layer did not become porous as observed…
Mg2GeO4 is an analogue for the ultra-high pressure behavior of Mg2SiO4, so we have investigated magnesium germanate to 275 GPa and over 2000 K using a laser-heated diamond anvil cell combined with in situ synchrotron X-ray diffraction and…
Topochemical fluorination offers a low--temperature route for modifying the anion chemistry and electronic ground states of layered transition-metal oxides, providing access to metastable phases and functionalities that are not able to be…