相关论文: On melting of boron phosphide under pressure

Melting of rhombohedral boron subnitride B13N2 has been studied in situ at pressures to 8 GPa using synchrotron X-ray diffraction and electrical resistivity measurements. It has been found that above 2.6 GPa B13N2 melts incongruently, and…

Melting of boron subphosphide (B12P2) to 26 GPa has been studied by in situ synchrotron X-ray powder diffraction in a laser-heated diamond anvil cell, and by quenching and electrical resistance measurements in a toroid-type high-pressure…

The pressure dependence of melting temperatures for boron carbide and B4C-carbon eutectic has been studied up to 8 GPa, and it was found that in both cases the melting curves exhibit negative slope (-13\pm6 K/GPa), that is indicative of…

Melting of orthorhombic boron silicide B6Si has been studied at pressures up to 8 GPa using in situ electrical resistivity measurements and quenching. It has been found that in the 2.6-7.7 GPa range B6Si melts congruently, and the melting…

The electrical conductivity of melts of boron and its carbide (B4C), nitride (BN), and phosphide (BP) has been studied at pressures to 7.7 GPa and temperatures to 3500 K. It has been shown that these melts are good conductors with specific…

Black phosphorus (bP) is a crystalline material that can be seen as ordered stackings of two-dimensional layers, which lead to outstanding anisotropic physical properties. The knowledge of its pressure-temperature (P-T) phase diagram, and…

The melting of silicon carbide has been studied at pressures 5-8 GPa and temperatures up to 3300 K. It has been found that SiC melts congruently, and its melting curve has negative slope of -44 +/- 4 K/GPa.

Cubic boron phosphide BP has been studied in situ by X-ray diffraction and Raman scattering up to 55 GPa at 300 K in a diamond anvil cell. The bulk modulus of B0 = 174(2) GPa has been established, which is in excellent agreement with our ab…

The 300 K equation of state of cubic (zinc-blende) boron phosphide BP has been studied by in situ single-crystal X-ray diffraction with synchrotron radiation up to 55 GPa. The measurements have been performed under quasi-hydrostatic…

A new method of producing boron phosphide (BP) submicron powders by self-propagating high-temperature reaction between boron phosphate and magnesium in the presence of an inert diluent (sodium chloride) has been proposed. Bulk…

Different phases of solid boron under high pressure are studied by first principles calculations. The $\alpha$-B$_{12}$ structure is found to be stable up to 270 GPa. Its semiconductor band gap (1.72 eV) decreases continuously to zero…

Simple cubic (sc) black phosphorus (denoted BP), stable at P>10GPa, seems an ordinary metal. It has electron-phonon-driven superconductivity with Tc 5-10 K. The A17 phase, stable at atmospheric pressure, has a narrow gap, becomes…

Compressibility of boron subphosphide B12P2 has been studied under quasi-hydrostatic conditions up to 26 GPa and 2600 K using laser-heated diamond anvil cell and angle-dispersive synchrotron X-ray diffraction. 300-K data fit yields the…

Recent experiments have obtained the melting line of sodium up to pressures of about 130 GPa, finding that the melting line from the {\em bcc} phase reaches a maximum at a temperature of {\em c.a.} 1000 K and a pressure of 31 GPa, and at…

Using first-principles molecular dynamics, we calculated the equation of state and shock Hugoniot of various boron phases. We find a large mismatch between Hugoniots based on existing knowledge of the equilibrium phase diagram and those…

Boron phosphide (BP) is a (super)hard semiconductor constituted of light elements, which is promising for high demand applications at extreme conditions. The behavior of BP at high temperatures and pressures is of special interest but is…

We report ab initio calculations of the melting curve and Hugoniot of molybdenum for the pressure range 0-400 GPa, using density functional theory (DFT) in the projector augmented wave (PAW) implementation. We use the ``reference…

Quasi-hydrostatic compression of rhombohedral boron monosulfide (r-BS) has been studied up to 50 GPa at room temperature using diamond-anvil cells and angle-dispersive synchrotron X-ray diffraction. A fit of the experimental P-V data to the…

The melting curve of pure silica (SiO$_2$) was determined using {\it ab initio} density functional theory together with the solid-liquid coexisting approach, thermodynamic integration and the Z method. The melting curves are consistent with…

We present computer simulations of liquid and solid phases of condensed methane at pressures below 25 GPa, between 150 and 300 K, where no appreciable molecular dissociation occurs. We used molecular dynamics (MD) and metadynamics…