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相关论文: Band bending at interfaces between topological ins…

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The surface band bending tunes considerably the surface band structures and transport properties in topological insulators. We present a direct measurement of the band bending on the Bi2Se3 by using the bulk sensitive angular-resolved hard…

材料科学 · 物理学 2015-08-17 C. E. ViolBarbosa , Chandra Shekhar , Binghai Yan , S. Ouardi , G. H. Fecher , C. Felser

Bi2Se3 is theoretically predicted1 2and experimentally observed2,3 to be a three dimensional topological insulator. For possible applications, it is important to understand the electronic structure of the planar device. In this work,…

By combining transport and photo emission measurements on (Bi1-xInx)2Se3 thin films, we report that this system transforms from a topologically non-trivial metal into a topologically trivial band insulator through three quantum phase…

介观与纳米尺度物理 · 物理学 2012-11-02 Matthew Brahlek , Namrata Bansal , Nikesh Koirala , Su-Yang Xu , Madhab Neupane , Chang Liu , M. Zahid Hasan , Seongshik Oh

Bi2Se3 is a prototypical topological insulator which has a small band gap (~0.3 eV) and topologically protected conducting surface states. This material exhibits quite strong thermoelectric effects. Here we show in a mechanically exfoliated…

Infrared transparent conductors have long been sought due to their broad optoelectronic applications in the infrared wavelength range. However, the search for ideal materials has been limited by the inherent trade-off between electrical…

Identification and control of topological phases in topological thin films offer great opportunity for fundamental research and the fabrication of topology-based devices. Here, combining molecular beam epitaxy, angle-resolved photoemission…

Optical band gap properties of high-quality few-layer topological insulator Bi2Se3 thin films grown with magnetron sputtering are investigated using broadband absorption spectroscopy. We provide direct optical evidence of a rigid blue-shift…

材料科学 · 物理学 2017-05-24 Yub Raj Sapkota , Asma Alkabsh , Aaron Walber , Hassana Samassekou , Dipanjan Mazumdar

The interface between topological and normal insulators hosts metallic states that appear due to the change in band topology. While these topological states at a surface, i.e., a topological insulator-air/vacuum interface, have been studied…

We investigate the band dispersion and the spin texture of topologically protected surface states in the bulk topological insulators Bi2Se3 and Bi2Te3 by first-principles methods. Strong spin-orbit entanglement in these materials reduces…

介观与纳米尺度物理 · 物理学 2015-03-17 Oleg V. Yazyev , Joel E. Moore , Steven G. Louie

Topological insulators represent a new state of quantum matter attractive to both fundamental physics and technological applications such as spintronics and quantum information processing. In a topological insulator, the bulk energy gap is…

Topological insulators are a class of band insulators with non-trivial topology, a result of band inversion due to the strong spin-orbit coupling. The transition between topological and normal insulator can be realized by tuning the…

强关联电子 · 物理学 2018-03-29 Wenhan Zhang , M. X. Chen , Jixia Dai , Xueyun Wang , Zhicheng Zhong , Sang-Wook Cheong , Weida Wu

The spin-helical surface states in three-dimensional topological insulator (TI), such as Bi2Se3, are predicted to have superior efficiency in converting charge current into spin polarization. This property is said to be responsible for the…

材料科学 · 物理学 2016-08-03 Jia Zhang , Julian P. Velev , Xiaoqian Dang , Evgeny Y. Tsymbal

Three-dimensional (3D) topological insulators (TI) are novel quantum materials with insulating bulk and topologically protected metallic surfaces with Dirac-like band structure. The spin-helical Dirac surface states are expected to host…

Topological insulators(1-8) are a novel form of matter which features metallic surface states with quasirelativistic dispersion similar to graphene(9). Unlike graphene, the locking of spin and momentum and the protection by time-reversal…

介观与纳米尺度物理 · 物理学 2012-07-23 M. R. Scholz , J. Sánchez-Barriga , D. Marchenko , A. Varykhalov , A. Volykhov , L. V. Yashina , O. Rader

Topological insulators are bulk semiconductors that manifest in-gap massless Dirac surface states due to the topological bulk-boundary correspondence principle [1-3]. These surface states have been a subject of tremendous ongoing interest,…

We report on microscopic tight-binding modeling of surface states in Bi$_2$Se$_3$ three-dimensional topological insulator, based on a sp$^3$ Slater-Koster Hamiltonian, with parameters calculated from density functional theory. The effect of…

介观与纳米尺度物理 · 物理学 2014-11-04 A. Pertsova , C. M. Canali

Understanding the spin-texture behavior of boundary modes in ultrathin topological insulator films is critically essential for the design and fabrication of functional nano-devices. Here by using spin-resolved photoemission spectroscopy…

Topological insulators represent a paradigm shift in surface physics. The most extensively studied Bi$_2$Se$_3$-type topological insulators exhibit layered structures, wherein neighboring layers are weakly bonded by van der Waals…

材料科学 · 物理学 2016-01-22 Can Li , Torben Winzer , Aron Walsh , Binghai Yan , Catherine Stampfl , Aloysius Soon

Topological insulators are bulk insulators with exotic surface states, protected under time-reversal symmetry, that hold promise in observing many exciting condensed-matter phenomena. In this report, we show that by having a topological…

介观与纳米尺度物理 · 物理学 2019-10-29 S. Mathimalar , S. Sasmal , P. Rajasekhar , A. Bhardwaj , S. Chaudhary , B. Satpati , K. V. Raman

Topological insulators are insulating in the bulk but possess metallic surface states protected by time-reversal symmetry. Here, we report a detailed electronic transport study in high quality Bi2Se3 topological insulator thin films…

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