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The quantum coherence of electronic quasiparticles underpins many of the emerging transport properties of conductors at small scales. Novel electronic implementations of quantum optics devices are now available with perspectives such as…

介观与纳米尺度物理 · 物理学 2019-09-24 H. Duprez , E. Sivre , A. Anthore , A. Aassime , A. Cavanna , A. Ouerghi , U. Gennser , F. Pierre

With advances in exfoliation and synthetic techniques, atomically thin films of semiconducting transition metal dichalcogenides have recently been isolated and characterized. Their two-dimensional structure, coupled with a direct band gap…

介观与纳米尺度物理 · 物理学 2014-02-04 Deep Jariwala , Vinod K. Sangwan , Lincoln J. Lauhon , Tobin J. Marks , Mark C. Hersam

Understanding the non-monotonic behavior in the temperature dependent resistance, R(T), of strongly correlated two-dimensional (2D) carriers in clean semiconductors has been a central issue in the studies of 2D metallic states and…

介观与纳米尺度物理 · 物理学 2015-01-27 Nicholas J. Goble , John D. Watson , Michael J. Manfra , Xuan P. A. Gao

Two-dimensional (2D) transition metal dichalcogenides (TMDs) such as molybdenum disulfide (MoS2) have been intensively investigated because of their exclusive physical properties for advanced electronics and optoelectronics. In the present…

Motivated by recent breakthrough in molecular beam epitaxy of GaAs/AlGaAs quantum wells [Y. J. Chung \textit{et al.}, Nature Materials \textbf{20}, 632 (2021)], we examine contributions to mobility and quantum mobility from various…

介观与纳米尺度物理 · 物理学 2022-06-30 Yi Huang , B. I. Shklovskii , M. A. Zudov

In atomically thin semiconductors based on transition metal dichalcogenides, photoexcitation can be used to generate high densities of electron-hole pairs. Due to optical nonlinearities, which originate from Pauli blocking and many-body…

介观与纳米尺度物理 · 物理学 2020-12-15 Daniel Erben , Alexander Steinhoff , Michael Lorke , Frank Jahnke

Recent experiments performed on weakly pinched quantum point contacts, have shown a resistance that tend to decrease at low source drain voltage. We show that enhanced Coulomb interactions, prompt by the presence of the point contact, may…

强关联电子 · 物理学 2009-11-11 Dganit Meidan , Yuval Oreg

In this work we propose a channel backscattering model in which increased carrier temperature at the top of the potential energy barrier in the channel is taken into account. This model represents an extension of a previous model by the…

介观与纳米尺度物理 · 物理学 2015-05-27 Gino Giusi , Giuseppe Iannaccone , Felice Crupi , Umberto Ravaioli

Circular photocurrents (CPC), namely circular photogalvanic (CPGE) and photon drag effects, have recently been reported both in monolayer and multilayer transition metal dichalcogenide (TMD) phototransistors. However, the underlying physics…

Studying the atomic structure of intrinsic defects in two-dimensional transition metal dichalcogenides is difficult since they damage quickly under the intense electron irradiation in transmission electron microscopy (TEM). However, this…

Decrease in the size of integrated circuits (IC) and metal interconnects raise resistivity due the amplification of electron scattering effects, which decreases the efficiency of chiplets. While previous studies have investigated the…

介观与纳米尺度物理 · 物理学 2026-01-23 Sihe Chen , Kevin Batzinger , Manuel Smeu

Monolayer two-dimensional transitional metal dichalcogenides, such as MoS2, WS2 and WSe2, are direct band gap semiconductors with large exciton binding energy. They attract growing attentions for opto-electronic applications including solar…

介观与纳米尺度物理 · 物理学 2017-10-05 Shoujun Zheng , Jinkyu So , Fucai Liu , Zheng Liu , Nikolay Zheludev , Hong Jin Fan

We report the observation of an unexpected, long-range field-effect in WTe$_2$ devices, leading to large gate-induced changes of the transport properties of crystals much thicker than the electrostatic screening length. The phenomenon…

介观与纳米尺度物理 · 物理学 2016-10-26 Lin Wang , Ignacio Gutiérrez-Lezama , Céline Barreteau , Dong-Keun Ki , Enrico Giannini , Alberto F. Morpurgo

We study intrinsic charge-carrier scattering mechanisms and determine their contribution to the transport properties of the two-dimensional ferromagnet Fe$_3$GeTe$_2$. We use state-of-the-art first-principles calculations combined with the…

Emergence of charge-2$e$ bosonic carriers as tightly bound electrons offer perhaps the simplest route to understand the non-Fermi liquid behaviors widely observed in functional materials. However, such scenarios are often discarded when…

强关联电子 · 物理学 2026-05-28 Muhammad Gaffar , Wei Ku

Due to their unique two-dimensional nature, charge carriers in semiconducting transition metal dichalcogenides (TMDs) exhibit strong unscreened Coulomb interactions and sensitivity to defects and impurities. The versatility of van der Waals…

Atomically thin transition metal dichalcogenides are highly promising for integrated optoelectronic and photonic systems due to their exciton-driven linear and nonlinear interaction with light. Integrating them into optical fibers yields…

Two-dimensional (2D) materials are a new class of materials with interesting physical properties and applications ranging from nanoelectronics to sensing and photonics. In addition to graphene, the most studied 2D material, monolayers of…

材料科学 · 物理学 2022-04-12 Lianhua Zhang , Jian Chen , Fei Liu , Zhengyang Du , Yilun Jiang , Min Han

In this work, we investigate the effect of the stacking sequence in MoS2 multilayer systems on their electron transport properties, through first-principles simulations of structural and electron transport properties. We show that…

材料科学 · 物理学 2018-11-09 Teresa Cusati , Alessandro Fortunelli , Gianluca Fiori , Giuseppe Iannaccone

Two-dimensional (2D) atomic crystals, such as graphene and transition-metal dichalcogenides, have emerged as a new class of materials with remarkable physical properties. In contrast to graphene, monolayer MoS2 is a non-centrosymmetric…

材料科学 · 物理学 2015-06-11 Kin Fai Mak , Keliang He , Changgu Lee , Gwan Hyoung Lee , James Hone , Tony F. Heinz , Jie Shan