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相关论文: Metal-insulator Transition in VO2: a DFT+DMFT pers…

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Electrons in correlated insulators are prevented from conducting by Coulomb repulsion between them. When an insulator-to-metal transition is induced in a correlated insulator by doping or heating, the resulting conducting state can be…

Synchrotron X-ray total scattering studies of structural changes in rutile VO2 at the metal-insulator transition temperature of 340 K reveal that monoclinic and tetragonal phases of VO2 coexist in equilibrium, as expected for a first-order…

材料科学 · 物理学 2010-08-10 Serena A. Corr , Daniel P. Shoemaker , Brent C. Melot , Ram Seshadri

Using an \textit{ab initio} approach based on the GW approximation which includes strong local \textbf{k}-space correlations, the Metal-Insulator Transition of M$_2$ vanadium dioxide is broken down into its component parts and investigated.…

The single crystal VO2, exihibiting a first-order metal-insulator transition (MIT) at 67.2 degrees C and an insulator-insulator transition (IIT) at ~49.7 degrees C, is grown. From synchrotron-based x-ray microdiffraction analysis, the IIT…

We consider a minimal model to investigate the metal-insulator transition in VO$_2$. We adopt a Hubbard model with two orbital per unit cell, which captures the competition between Mott and singlet-dimer localization. We solve the model…

强关联电子 · 物理学 2017-01-12 Óscar Nájera , Marcello Civelli , Vladimir Dobrosavljević , Marcelo J. Rozenberg

We provide insights into the atomistic details of the ultrafast spatially-resolved breakdown of the insulating M1 phase in bulk VO2 employing an ab initio technique based on time-dependent density-functional theory and dynamical mean-field…

The observation of electronic phase separation textures in vanadium dioxide (VO2), a prototypical electron-correlated oxide, has recently added new perspectives on the long standing debate about its metal-insulator transition and its…

The metal-insulator transition (MIT) of VO2 is discussed with particular emphasis on the structural instability of the rutile compounds toward dimerization. Ti substitution experiments reveal that the MIT is robust up to 20% Ti…

强关联电子 · 物理学 2022-02-01 Zenji Hiroi

We analyze the effects on the structural and electronic properties of vanadium dioxide (VO$_2$) of adding an empirical inter-atomic potential within the density-functional theory$+V$ (DFT$+V$) framework. We use the DFT$+V$ machinery founded…

材料科学 · 物理学 2025-04-15 Lea Haas , Peter Mlkvik , Nicola A. Spaldin , Claude Ederer

We present the first comprehensive broadband optical spectroscopy data on two insulating phases of vanadium dioxide (VO2): monoclinic M2 and triclinic. The main result of our work is that the energy gap and the electronic structure are…

Vanadium dioxide(VO$_2$) is a paradigmatic example of a strongly correlated system that undergoes a metal-insulator transition at a structural phase transition. To date, this transition has necessitated significant post-hoc adjustments to…

强关联电子 · 物理学 2017-12-20 Huihuo Zheng , Lucas K. Wagner

The temperature dependence of the Mott metal-insulator transition (MIT) is studied with a VO_2-based two-terminal device. When a constant voltage is applied to the device, an abrupt current jump is observed with temperature. With increasing…

强关联电子 · 物理学 2015-06-25 Bong-Jun Kim , Yong Wook Lee , Byung-Gyu Chae , Sun Jin Yun , Soo-Young Oh , Young-Sik Lim , Hyun-Tak Kim

The insulator-to-metal transition (IMT) in strongly correlated materials, such as vanadium dioxide (VO2), offers a transformative platform for next-generation adaptive electronics and neuromorphic computing. However, harnessing this…

Metal-insulator (MI) transitions in correlated electron systems have long been a central and controversial issue in material science. Vanadium dioxide (VO2) exhibits a first-order MI transition at 340 K. For more than half a century, it has…

强关联电子 · 物理学 2020-08-26 Yasuhiro H. Matsuda , Daisuke Nakamura , Akihiko Ikeda , Shojiro Takeyama , Yuji Muraoka , Yuki Suga

The electronic structure of the vanadium dioxide VO_2 in the tetragonal R and two monocinic M_1 and M_2 structural modifications was calculated in frames of the local-density functional (LDA) approach and the LSDA + U formalism of…

强关联电子 · 物理学 2007-05-23 M. A. Korotin , N. A. Skorikov , V. I. Anisimov

Rutile ($R$) phase VO$_2$ is a quintessential example of a strongly correlated bad-metal, which undergoes a metal-insulator transition (MIT) concomitant with a structural transition to a V-V dimerized monoclinic phase below T$_{MIT} \sim…

材料科学 · 物理学 2020-04-29 P. Ganesh , Frank Lechermann , Ilkka Kylanpaa , Jaron Krogel , Paul R. C. Kent , Olle Heinonen

We present cluster-DMFT (CTQMC) calculations based on a downfolded tight-binding model in order to study the electronic structure of vanadium dioxide (VO_2) both in the low-temperature (M_1) and high-temperature (rutile) phases. Motivated…

强关联电子 · 物理学 2015-05-18 Bence Lazarovits , Kyoo Kim , Kristjan Haule , Gabriel Kotliar

Materials that undergo reversible metal-insulator transitions are obvious candidates for new generations of devices. For such potential to be realised, the underlying microscopic mechanisms of such transitions must be fully determined. In…

Vanadium dioxide is one of the most studied strongly correlated materials. Nonetheless, the intertwining between electronic correlation and lattice effects has precluded a comprehensive description of the rutile metal to monoclinic…

强关联电子 · 物理学 2020-03-18 Francesco Grandi , Adriano Amaricci , Michele Fabrizio

We present a coordinated study of the paramagnetic-to-antiferromagnetic, rhombohedral-to-monoclinic, and metal-to-insulator transitions in thin-film specimens of the classic Mott insulator V$_2$O$_3$ using low-energy muon spin relaxation,…