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By using angle-resolved photoemission spectroscopy combined with first-principles calculations, we reveal that the topmost unit cell of ZrSnTe crystal hosts two-dimensional (2D) electronic bands of topological insulator (TI) state, though…

Two-dimensional (2D) topological insulator (TI) have been recognized as a new class of quantum state of matter. They are distinguished from normal 2D insulators with their nontrivial band-structure topology identified by the $Z_2$ number as…

Two-dimensional (2D) topological insulators (TIs) with a large bulk band-gap are promising for experimental studies of the quantum spin Hall effect and for spintronic device applications. Despite considerable theoretical efforts in…

Two-dimensional (2D) topological insulators (TIs), a new state of quantum matter, are promising for achieving the low-power-consuming electronic devices owning to the remarkable robustness of their conducting edge states against…

材料科学 · 物理学 2016-11-15 Yandong Ma , Liangzhi Kou , Ying Dai , Thomas Heine

Recently, two-dimensional (2D) transition metal carbides and nitrides, namely, MXenes have attracted lots of attention for electronic and energy storage applications. Due to a large spin-orbit coupling (SOC) and the existence of a…

介观与纳米尺度物理 · 物理学 2017-11-15 Yunye Liang , Mohammad Khazaei , Ahmad Ranjbar , Masao Arai , Seiji Yunoki , Yoshiyuki Kawazoe , Hongming Weng , Zhong Fang

The major breakthroughs in the understanding of topological materials over the past decade were all triggered by the discovery of the Z$_2$ topological insulator (TI). In three dimensions (3D), the TI is classified as either "strong" or…

Two-dimensional (2D) topological insulators (TIs) are promising platforms for low-dissipation spintronic devices based on the quantum spin Hall (QSH) effect, but experimental realization of such systems with a large band gap suitable for…

介观与纳米尺度物理 · 物理学 2018-05-23 P. Chen , W. -W. Pai , Y. -H. Chan , W. -L. Sun , C. -Z. Xu , D. -S. Lin , M. Y. Chou , A. -V. Fedorov , T. -C. Chiang

Topological insulators (TIs) are promising for achieving dissipationless transport devices due to the robust gapless states inside the insulating bulk gap. However, currently realized 2D TIs, quantum spin Hall (QSH) insulators, suffer from…

Topological insulators (TIs) represent a new quantum state of matter characterized by robust gapless states inside the insulating bulk gap. The metallic edge states of a two-dimensional (2D) TI, known as quantum spin Hall (QSH) effect, are…

介观与纳米尺度物理 · 物理学 2015-06-17 Liangzhi Kou , Binghai Yan , Feiming Hu , Shu-Chun Wu , Tim O. Wehling , Claudia Felser , Changfeng Chen , Thomas Frauenheim

Topological insulators (TIs) are a class of materials characterized by an insulting bulk and high mobility topologically protected surface states, making them promising candidates for future optoelectronic and quantum devices. Although…

Two-dimensional topological insulators (2D TIs) are a highly desired quantum phase but few materials have demonstrated clear signatures of a 2D TI state. It has been predicted that 2D TIs can be created from thin films of three-dimensional…

介观与纳米尺度物理 · 物理学 2023-02-17 Alexander C. Lygo , Binghao Guo , Arman Rashidi , Victor Huang , Pablo Cuadros-Romero , Susanne Stemmer

Three dimensional (3D) topological insulators (TIs) are an important class of materials with applications in electronics, spintronics and quantum computing. With the recent development of truly bulk insulating 3D TIs, it has become possible…

Based on density functional theory (DFT), we investigate the electronic properties of bulk and single-layer ZrTe$_4$Se. The band structure of bulk ZrTe$_4$Se can produce a semimetal-to-topological insulator (TI) phase transition under…

材料科学 · 物理学 2021-10-27 Xing Wang , Wenhui Wan , Yanfeng Ge , Yong Liu

We grow nearly freestanding single-layer 1T'-WTe2 on graphitized 6H-SiC(0001) by using molecular beam epitaxy (MBE), and characterize its electronic structure with scanning tunneling microscopy / spectroscopy (STM/STS). We demonstrate the…

Topological insulators~(TIs) are a new class of materials that resemble ordinary band insulators in terms of a bulk band gap but exhibit protected metallic states on their boundaries. In this modern direction, higher-order TIs~(HOTIs) are a…

介观与纳米尺度物理 · 物理学 2024-09-16 Arnob Kumar Ghosh , Tanay Nag , Arijit Saha

Topological insulators (TIs) are characterized by an insulating bulk and symmetry protected bound state on their boundaries. A "strong" topological insulator is characterized by robust conducting states on \emph{all} boundaries protected by…

介观与纳米尺度物理 · 物理学 2020-12-16 Inbar Hotzen Grinberg , Mao Lin , Wladimir A. Benalcazar , Taylor L. Hughes , Gaurav Bahl

Three-dimensional (3D) topological insulators (TIs) are candidate materials for various electronic and spintronic devices due to their strong spin-orbit coupling and unique surface electronic structure. Rapid, low-cost preparation of…

2D topological insulators promise novel approaches towards electronic, spintronic, and quantum device applications. This is owing to unique features of their electronic band structure, in which bulk-boundary correspondences enforces the…

Topological insulator (TI) represents an unconventional quantum phase of matter with insulating bulk bandgap and metallic surface states. Recent theoretical calculations and photoemission spectroscopy measurements show that Group V-VI…

介观与纳米尺度物理 · 物理学 2010-07-09 Desheng Kong , Wenhui Dang , Judy J. Cha , Hui Li , Stefan Meister , Hailin Peng , Zhongfan Liu , Yi Cui

Bi$_{2}$Te$_{3}$ and Bi$_{2}$Se$_{3}$ are well known 3D-topological insulators. Films made of these materials exhibit metal-like surface states with a Dirac dispersion and possess high mobility. The high mobility metal-like surface states…

介观与纳米尺度物理 · 物理学 2015-06-22 Parijat Sengupta , Tillmann Kubis , Yaohua Tan , Gerhard Klimeck
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