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We report fabrication of graphene devices in a Corbino geometry consisting of concentric circular electrodes with no physical edge connecting the inner and outer electrodes. High device mobility is realized using boron nitride encapsulation…

介观与纳米尺度物理 · 物理学 2019-04-10 Y. Zeng , J. I. A. Li , S. A. Dietrich , O. M. Ghosh , K. Watanabe , T. Taniguchi , J. Hone , C. R. Dean

We investigate the electronic and optical properties of lateral heterostructures made of alternated armchair ribbons of graphene and hexagonal boron nitride. It is known that the gapwidth of these heterostructures can be classified into…

材料科学 · 物理学 2026-01-22 Elisa Serrano Richaud , Sylvain Latil , Lorenzo Sponza

A gated Hall-bar device is made from an epitaxially grown, free-standing InSb nanosheet on a hexagonal boron nitride (hBN) dielectric/graphite gate structure and the electron transport properties in the InSb nanosheet are studied by…

介观与纳米尺度物理 · 物理学 2022-08-22 Li Zhang , Dong Pan , Yuanjie Chen , Jianhua Zhao , H. Q. Xu

Electron transport in nanoscale devices can often result in nontrivial spatial patterns of voltage and current that reflect a variety of physical phenomena, particularly in nonlocal transport regimes. While numerous techniques have been…

We demonstrate a first-principles method to study magnetotransport in materials by solving the Boltzmann transport equation (BTE) in the presence of an external magnetic field. Our approach employs ab initio electron-phonon interactions and…

材料科学 · 物理学 2021-04-14 Dhruv C. Desai , Bahdan Zviazhynski , Jin-Jian Zhou , Marco Bernardi

We show how hydrogenation of graphene nanoribbons at small concentrations can open new venues towards carbon-based spintronics applications regardless of any especific edge termination or passivation of the nanoribbons. Density functional…

介观与纳米尺度物理 · 物理学 2015-05-14 D. Soriano , F. Muñoz-Rojas , J. Fernández-Rossier , J. J. Palacios

We measure the channel potential of a graphene transistor using a scanning photocurrent imaging technique. We show that at a certain gate bias, the impact of the metal on the channel potential profile extends into the channel for more than…

Graphene/hexagonal boron nitride (G/$h$-BN) heterostructures offer an excellent platform for developing nanoelectronic devices and for exploring correlated states in graphene under modulation by a periodic superlattice potential. Here, we…

介观与纳米尺度物理 · 物理学 2018-03-14 Jiayu Li , Li Lin , Guang-Yao Huang , N. Kang , Jincan Zhang , Hailin Peng , Zhongfan Liu , H. Q. Xu

Ballistic transport occurs whenever electrons propagate without collisions deflecting their trajectory. It is normally observed in conductors with a negligible concentration of impurities, at low temperature, to avoid electron-phonon…

介观与纳米尺度物理 · 物理学 2018-04-25 Youngwoo Nam , Dong-Keun Ki , David Soler-Delgado , Alberto F. Morpurgo

Electrical spin injection from ferromagnetic metals into graphene is hindered by the impedance mismatch between the two materials. This problem can be reduced by the introduction of a thin tunnel barrier at the interface. We present room…

介观与纳米尺度物理 · 物理学 2009-11-28 C. Józsa , M. Popinciuc , N. Tombros , H. T. Jonkman , B. J. van Wees

We study conductance across a twisted bilayer graphene coupled to single-layer graphene leads in two setups: a flake of graphene on top of an infinite graphene ribbon and two overlapping semi-infinite graphene ribbons. We find conductance…

介观与纳米尺度物理 · 物理学 2020-07-30 Hadi Z. Olyaei , Bruno Amorim , Pedro Ribeiro , Eduardo V. Castro

We study theoretically electron interference in a Mach--Zehnder-like geometry formed by four zigzag graphene nanoribbons (ZGNRs) arranged in parallel pairs, one on top of the other, such that they form intersection angles of 60$^\circ$.…

介观与纳米尺度物理 · 物理学 2023-07-04 Sofia Sanz , Nick Papior , Géza Giedke , Daniel Sánchez-Portal , Mads Brandbyge , Thomas Frederiksen

Hot charge carriers in graphene exhibit fascinating physical phenomena, whose understanding has improved greatly over the past decade. They have distinctly different physical properties compared to, for example, hot carriers in conventional…

介观与纳米尺度物理 · 物理学 2021-05-19 Mathieu Massicotte , Giancarlo Soavi , Alessandro Principi , Klaas-Jan Tielrooij

In this study, we highlight the potential of strain engineering in graphene/hBN (hexagonal Boron nitride) 2D heterostructures, enabling their use as wide-range light absorbers with significant implications for optoelectronic applications.…

介观与纳米尺度物理 · 物理学 2024-07-17 Priyanka Sinha , Prasanta K. Panigrahi , Bheemalingam Chittari

The optical properties of graphene are made unique by the linear band structure and the vanishing density of states at the Dirac point. It has been proposed that even in the absence of a semiconducting bandgap, a relaxation bottleneck at…

Interband optical transitions in graphene are subject to pseudospin selection rules. Impulsive excitation with linearly polarized light generates an anisotropic photocarrier occupation in momentum space that evolves at timescales shorter…

介观与纳米尺度物理 · 物理学 2015-11-18 M. Trushin , A. Grupp , G. Soavi , A. Budweg , D. De Fazio , U. Sassi , A. Lombardo , A. C. Ferrari , W. Belzig , A. Leitenstorfer , D. Brida

A transfer matrix approach to study ballistic charge transport in few-layer graphene with chiral-symmetric stacking configurations is developed. We demonstrate that the chiral symmetry justifies a non-Abelian gauge transformation at the…

介观与纳米尺度物理 · 物理学 2010-03-12 W. -R. Hannes , M. Titov

We present an ab-initio study of electron mobility and electron-phonon coupling in chemically modified graphene, considering fluorinated and hydrogenated graphene at different percentage coverage. Hexagonal Boron Carbon Nitrogen (h-BCN) is…

材料科学 · 物理学 2011-12-02 Samantha Bruzzone , Gianluca Fiori

Graphene on hexagonal boron-nitride (h-BN) is an atomically flat conducting system that is ideally suited for probing the effect of Zeeman splitting on electron transport. We demonstrate by magneto-transport measurements that a parallel…

介观与纳米尺度物理 · 物理学 2016-08-24 F. Chiappini , S. Wiedmann , M. Titov , A. K. Geim , R. V. Gorbachev , E. Khestanova , A. Mishchenko , K. S. Novoselov , J. C. Maan , U. Zeitler

Electronic properties of the graphene layer sandwiched between two hexagonal boron nitride sheets have been studied using the first-principles calculations and the minimal tight-binding model. It is shown that for the ABC-stacked structure…

材料科学 · 物理学 2010-11-10 J. Slawinska , I. Zasada , P. Kosinski , Z. Klusek