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We study experimentally the transport properties of "inverted" semiconductor HgTe-based quantum well, which is related to the two-dimensional topological insulator, in diffusive transport regime. We perform nonlocal electrical measurements…

介观与纳米尺度物理 · 物理学 2015-05-28 G. M. Gusev , Z. D. Kvon , O. A. Shegai , N. N. Mikhailov , S. A. Dvoretsky , J. C. Portal

We investigate experimentally transport in gated microsctructures containing a band-inverted HgTe/Hg_{0.3}Cd_{0.7}Te quantum well. Measurements of nonlocal resistances using many contacts prove that in the depletion regime the current is…

Recent theory predicted that the Quantum Spin Hall Effect, a fundamentally novel quantum state of matter that exists at zero external magnetic field, may be realized in HgTe/(Hg,Cd)Te quantum wells. We have fabricated such sample structures…

The search for topologically non-trivial states of matter has become an important goal for condensed matter physics. Recently, a new class of topological insulators has been proposed. These topological insulators have an insulating gap in…

介观与纳米尺度物理 · 物理学 2009-11-13 Markus Koenig , Hartmut Buhmann , Laurens W. Molenkamp , Taylor L. Hughes , Chao-Xing Liu , Xiao-Liang Qi , Shou-Cheng Zhang

We report transport measurements in HgTe-based quantum wells with well width of 8 nm, corresponding to quantum spin Hall state, subject to in-plane magnetic field. In the absence of the magnetic field the local and nonlocal resistances…

介观与纳米尺度物理 · 物理学 2013-11-27 G. M. Gusev , E. B. Olshanetsky , Z. D. Kvon , O. E. Raichev , N. N. Mikhailov , S. A. Dvoretsky

Nonlocal resistance is studied in a two-dimensional system with a simultaneous presence of electrons and holes in a 20 nm HgTe quantum well. A large nonlocal electric response is found near the charge neutrality point (CNP) in the presence…

介观与纳米尺度物理 · 物理学 2012-06-01 G. M. Gusev , E. B. Olshanetsky , Z. D. Kvon , A. D. Levin , N. N. Mikhailov , S. A. Dvoretsky

We report the first electrical manipulation and detection of the mesoscopic intrinsic spin-Hall effect (ISHE) in semiconductors through non-local electrical measurement in nano-scale H-shaped structures built on high mobility HgTe/HgCdTe…

介观与纳米尺度物理 · 物理学 2008-12-22 C. Bruene , A. Roth , E. G. Novik , M. Koenig , H. Buhmann , E. M. Hankiewicz , W. Hanke , J. Sinova , L. W. Molenkamp

We report unconventional transport properties of HgTe wells with inverted band structure: the resistance does not show insulating behavior even when it is of the order of $10^2\times h/2e^{2}$. The system is expected to be a two-dimensional…

介观与纳米尺度物理 · 物理学 2013-08-21 G. M. Gusev , Z. D. Kvon , E. B Olshanetsky , A. D. Levin , Y. Krupko , J. C. Portal , N. N. Mikhailov , S. A. Dvoretsky

The effect of quantizing magnetic field on the electron transport is investigated in a two dimensional topological insulator (2D TI) based on a 8 nm (013) HgTe quantum well (QW). The local resistance behavior is indicative of a…

介观与纳米尺度物理 · 物理学 2018-04-04 E. B. Olshanetsky , Z. D. Kvon , G. M. Gusev , N. N. Mikhailov , S. A. Dvoretsky

Quantum spin Hall insulators, recently realized in HgTe/(Hg,Cd)Te quantum wells, support topologically protected, linearly dispersing edge states with spin-momentum locking. A local magnetic exchange field can open a gap for the edge…

介观与纳米尺度物理 · 物理学 2013-05-30 Carsten Timm

We report magnetotransport measurements in a HgTe quantum well with an inverted band structure, which is expected to be a two-dimensional (2D) topological insulator. A small magnetic field perpendicular the 2D layer breaks the time reversal…

介观与纳米尺度物理 · 物理学 2013-02-28 G. M. Gusev , E. B Olshanetsky , Z. D. Kvon , N. N. Mikhailov , S. A. Dvoretsky

We present a comprehensive theoretical study of the static spin response in HgTe quantum wells, revealing distinctive behavior for the topologically nontrivial inverted structure. Most strikingly, the q=0 (long-wave-length) spin…

介观与纳米尺度物理 · 物理学 2016-04-20 T. Kernreiter , M. Governale , U. Zülicke , E. M. Hankiewicz

The two-dimensional topological insulator phase has been observed previously in single HgTe-based quantum wells with inverted subband ordering. In double quantum wells (DQWs), coupling between the layers introduces additional degrees of…

介观与纳米尺度物理 · 物理学 2020-07-01 G. M. Gusev , E. B. Olshanetsky , F. G. G. Hernandez , O. E. Raichev , N. N. Mikhailov , S. A. Dvoretsky

In two-dimensional topological insulators, such as inverted HgTe/CdTe quantum wells, helical quantum spin Hall (QSH) states persist even at finite magnetic fields below a critical magnetic field $B_\mathrm{c}$, above which only quantum Hall…

介观与纳米尺度物理 · 物理学 2015-06-22 Benedikt Scharf , Alex Matos-Abiague , Igor Žutić , Jaroslav Fabian

We show that the Quantum Spin Hall Effect, a state of matter with topological properties distinct from conventional insulators, can be realized in HgTe/CdTe semiconductor quantum wells. By varying the thickness of the quantum well, the…

介观与纳米尺度物理 · 物理学 2009-11-11 B. Andrei Bernevig , Taylor L. Hughes , Shou-Cheng Zhang

We have studied quantized transport in HgTe wells with inverted band structure corresponding to the two-dimensional topological insulator phase (2D TI) with locally-controlled density allowing n-p-n and n-2D TI-n junctions. The resistance…

介观与纳米尺度物理 · 物理学 2013-02-15 G. M. Gusev , A. D. Levin , Z. D. Kvon , N. N. Mikhailov , S. A. Dvoretsky

Inverted HgTe/CdTe quantum wells have been used as a platform for the realization of 2D topological insulators, bulk insulator materials with spin-helical metallic edges states protected by time-reversal symmetry. This work investigates the…

介观与纳米尺度物理 · 物理学 2017-10-11 Dimy Nanclares , Leandro R. F. Lima , Caio H. Lewenkopf , Luis G. G. V. Dias da Silva

Following the recent theoretical proposal and experiment on quantum spin Hall effect in HgTe/CdTe quantum wells, we consider a single magnetic impurity localized in the bulk of the system, which we treat as a classical spin. It is shown…

材料科学 · 物理学 2010-05-04 Qin Liu , Tianxing Ma

We present magnetotransport measurements in HgTe quantum well with inverted band structure, which expected to be a two-dimensional topological insulator having the bulk gap with helical gapless states at the edge. The negative…

介观与纳米尺度物理 · 物理学 2015-01-16 G. M. Gusev , Z. D. Kvon , O. A. Shegai , N. N. Mikhailov , S. A. Dvoretsky

In a topological insulator (TI) the character of electron transport varies from insulating in the interior of the material to metallic near its surface. Unlike, however, ordinary metals, conducting surface states in TIs are topologically…

介观与纳米尺度物理 · 物理学 2013-02-08 G. Tkachov , E. M. Hankiewicz
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