相关论文: Hopping magnetoresistance in ion irradiated monola…
We present the magnetoresistance (MR) of highly doped monolayer graphene layers grown by chemical vapor deposition on 6H-SiC. The magnetotransport studies are performed on a large temperature range, from $T$ = 1.7 K up to room temperature.…
Large positive (P) magnetoresistance (MR) has been observed in parallel magnetic fields in a single 2D layer in a delta-doped GaAs/AlGaAs heterostructure with a variable-range-hopping (VRH) mechanism of conductivity. Effect of large PMR is…
A brief review of experiments directed to study a gradual localization of charge carriers and metal-insulator transition in samples of disordered monolayer graphene is presented. Disorder was induced by irradiation with different doses of…
We study theoretically magnetoresistance (MR) of graphene with different types of disorder. For short-range disorder, the key parameter determining magnetotransport properties---a product of the cyclotron frequency and scattering…
Highly-anisotropic in-plane magneto-resistance (MR) in graphite (HOPG) samples has been recently observed (Y. Kopelevich et al., arXiv:1202.5642) which is negative and linear in low fields in some current direction while it is giant,…
We present magnetotransport measurements at classical magnetic fields for three graphene monolayers with various levels of disorder. A square root magnetoresistance (SRMR) behavior is observed in one sample which has the characteristic…
The transport properties of nematic aerogels, which consist of highly oriented Al$_2$O$_3\cdot$SiO$_2$ nanofibers coated with a graphene shell with a large number of defects, are studied. The temperature dependences of the electrical…
The transport properties of nematic aerogels, which consist of oriented mullite nanofibers coated with a graphene shell, were studied. It is shown that the magnetoresistance of this system is well approximated by two contributions -…
Understanding magnetoresistance, the change in electrical resistance upon an external magnetic field, at the atomic level is of great interest both fundamentally and technologically. Graphene and other two-dimensional layered materials…
The ordinary magnetoresistance (MR) of doped semiconductors is positive and quadratic in a low magnetic field, B, as it should be in the framework of the Boltzmann kinetic theory or in the conventional hopping regime. We observe an unusual…
It has been observed that the low temperature magnetoresistance behaviour in polycrystalline colossal magnetoresistive (CMR) manganites differ significantly from the single crystals. The polycrystalline samples show large magnetoresistance…
Gradual localization of charge carriers was studied in a series of micro-size samples of monolayer graphene fabricated on the common large scale film and irradiated by different doses of C$^+$ ions with energy 35 keV. Measurements of the…
The low temperature (0.5-55 K) conduction of semicontinuous gold film vacuum deposited at T \approx 50 K is studied. The film is near the percolation threshold (thickness 3.25 nm). Its resistance is extremely sensitive to the applied…
We propose a new mechanism of negative magnetoresistance in non-magnetic granular materials in which electron transport is dominated by hopping between two nearest-neighbor clusters. We study the dependence of magnetoresistance on…
We propose a size effect which leads to the negative magnetoresistance in granular metal-insulator materials in which the hopping between two nearest neighbor clusters is the main transport mechanism. We show that the hopping probability…
In hopping magnetoresistance of doped insulators, an applied magnetic field shrinks the electron (hole) s-wave function of a donor or an acceptor and this reduces the overlap between hopping sites resulting in the positive magnetoresistance…
Magneto-resistance (MR) of Bi$_2$Se$_3$ nanoribbons is studied over a broad range of temperature ($T$=300K-2K) and under various magnetic field ($B$) orientations. The MR is strongly anisotropic with the perpendicular MR much larger than…
The magnetoresistance (MR) and the magnetization isotherms were studied up to high magnetic fields at T = 3 K and 300 K for a microcrystalline ($\mu$c) Ni foil corresponding to bulk Ni and for a nanocrystalline (nc) Ni foil. At T = 3 K, for…
We show a large magnetoresistance(MR) effect in a graphene heterostructure consisting of an metallic(M) and semiconductor(SC)-type armchair-graphene-nanoribbon(aGNR). In the heterostructure, the transmission across the first subband of the…
A large magnetoresistance effect is obtained at room-temperature by using p-i-n armchair-graphene-nanoribbon (GNR) heterostructures. The key advantage is the virtual elimination of thermal currents due to the presence of band gaps in the…