相关论文: Conduction through subsurface cracks in bulk topol…
Asymmetric electrical conductance is theoretically demonstrated on the surface of a topological insulator (TI) in the limit of infinitesimally small forward and reverse biases between two spin selective electrodes. The discontinuous…
Three-dimensional (3D) topological insulators (TIs) are known to carry 2D Dirac-like topological surface states in which spin-momentum locking prohibits backscattering. When thinned down to a few nanometers, the hybridization between the…
One of the most striking manifestations of electronic properties of topological insulators is the dependence of the photocurrent direction on the helicity of circularly polarized optical excitation. The helicity dependent photocurrents,…
Nonmagnetic topological insulators (TIs) are known for their robust metallic surface/edge states that are protected by time-reversal symmetry, making them promising candidates for next-generation spintronic and nanoelectronic devices.…
The newly-discovered three-dimensional strong topological insulators (STIs) exhibit topologically-protected Dirac surface states. While the STI surface state has been studied spectroscopically by e.g. photoemission and scanned probes,…
We show that the surface states of pristine 3D topological insulators (TIs) are analogs of ferromagnetic half metals due to complete polarization of an emergent momentum independent pseudospin (SU(2)) degree of freedom on the surface. To…
Topological insulators (TIs) are a class of materials characterized by an insulting bulk and high mobility topologically protected surface states, making them promising candidates for future optoelectronic and quantum devices. Although…
SmB$_6$ has been predicted to be a Kondo Topological Insulator with topologically protected conducting surface states. We have studied quantitatively the electrical transport through surface states in high quality single crystals of…
Topological crystalline insulators (TCIs) host topological phases of matter protected by crystal symmetries. Topological surface states in three-dimensional TCIs have been predicted and observed in IV-VI SnTe-class semiconductors. Despite…
In ideal topological insulator (TI) films the bulk state, which is supposed to be insulating, should not provide any electric coupling between the two metallic surfaces. However, transport studies on existing TI films show that the…
Three dimensional topological insulators are bulk insulators with $\mathbf{Z}_2$ topological electronic order that gives rise to conducting light-like surface states. These surface electrons are exceptionally resistant to localization by…
The main scientific activity in the field of topological insulators (TIs) consists of determining their electronic structure by means of magneto-transport and electron spectroscopy with a view to devices based on topological transport.…
The non-trivial topology of the three-dimensional (3D) topological insulator (TI) dictates the appearance of gapless Dirac surface states. Intriguingly, when a 3D TI is made into a nanowire, a gap opens at the Dirac point due to the quantum…
The major breakthroughs in the understanding of topological materials over the past decade were all triggered by the discovery of the Z$_2$ topological insulator (TI). In three dimensions (3D), the TI is classified as either "strong" or…
Topological insulators (TIs) are materials that are insulating in the bulk but have zero band gap surface states with linear dispersion and are protected by time reversal symmetry. These unique characteristics could pave the way for many…
Topological insulators (TIs) are intriguing materials for advanced computing applications based on spintronics because they can host robust spin effects. For instance, TIs have intrinsically large spin generation enabled by their large…
Study of the dephasing in electronic systems is not only important for probing the nature of their ground states, but also crucial to harnessing the quantum coherence for information processing. In contrast to well-studied conventional…
Topological insulators (TI) are a new class of quantum materials with insulating bulk enclosed by topologically protected metallic boundaries. The surface states of three-dimensional TIs have spin helical Dirac structure, and are robust…
Controlled stacking of van der Waals materials is a powerful tool for exploring the physics of quantum condensed matter. Given the small binding between layers, exploitation for engineering will require a breakthrough in stacking…
We predict a new class of three-dimensional topological insulators (TIs) in which the spin-orbit coupling (SOC) can more effectively generate a large band gap at $\Gamma$ point. The band gap of conventional TI such as Bi$_2$Se$_3$ is mainly…