相关论文: Conduction through subsurface cracks in bulk topol…
The notion of topological insulators (TIs), characterized by an insulating bulk and conducting topological surface states, can be extended to higher-order topological insulators (HOTIs) hosting gapless modes localized at the boundaries of…
Topological insulators have an insulating bulk but a metallic surface. In the simplest case, the surface electronic structure of a 3D topological insulator is described by a single 2D Dirac cone. A single 2D Dirac fermion cannot be realized…
After the theoretical prediction that SmB$_6$ is a topological Kondo insulator, there has been an explosion of studies on the SmB$_6$ surface. However, there is not yet an agreement on even the most basic quantities such as the surface…
Combining topological insulators (TIs) and magnetic materials in heterostructures is crucial for advancing spin-based electronics. Magnetic insulators (MIs) can be deposited on TIs using the spin-spray process, which is a unique non-vacuum,…
Low-field magnetotransport measurements of topological insulators such as Bi$_2$Se$_3$ are important for revealing the nature of topological surface states by quantum corrections to the conductivity, such as weak-antilocalization. Recently,…
Currently known topological insulators (TIs) are limited to narrow gap compounds incorporating heavy elements, thus severely limiting the material pool available for such applications. We show via first-principle calculations how a…
The gapless surface states of topological insulators (TI) can potentially be used to detect and harvest low-frequency infrared light. Nonetheless, it was shown that significant surface photocurrents due to light with frequency below the…
Mechanical exfoliation of bulk crystals has been widely used to obtain thin topological insulator (TI) flakes for device fabrication. However, such a process produces only micro-sized flakes that are highly irregular in shape and thickness.…
Magnetic topological insulators (MTIs) are among the prominent platforms for the next generation of high-speed and low-power spintronic devices. However, unlike their non-magnetic counterparts, where the surface spin-momentum locking…
Kondo insulators have recently aroused great interest because they are promising materials that host a topological insulator state caused by the strong electron interactions. Moreover, recent observations of the quantum oscillations in the…
There has been considerable interest in exploiting the spin degrees of freedom of electrons for potential information storage and computing technologies. Topological insulators (TI), a class of quantum materials, have special gapless…
Dozens of layered V$_2$IV$_2$VI$_6$ (V=P, As, Sb, Bi, IV=Si, Ge, Sn, Pb, VI=S, Se, Te) materials are investigated, several of which have been successfully synthesized in experiment. Among them, we predict nine strong topological insulators…
Chemical bond analysis for the topological insulator (TI) Bi2Se3 following valence bond theory and VSEPR rule is proposed and compared to that of graphene. The existence of pi-bond trimers on surface Se-layer is revealed to be responsible…
For potential applications in spintronics and quantum computing, it is desirable to place a quantum spin Hall insulator [i.e., a 2D topological insulator (TI)] on a substrate while maintaining a large energy gap. Here, we demonstrate a…
Proximity effect in a mechanically exfoliated Bi1.95Sb0.05Se3 topological insulator (TI) single crystal partially covered with disordered superconducting (SC) Mo thin film is reported. Magnetotransport measurement was performed…
The interplay between quantum interference, electron-electron interaction (EEI), and disorder is one of the central themes of condensed matter physics. Such interplay can cause high-order magnetoconductance (MC) corrections in…
Twisted bilayers of two-dimensional (2D) materials are proving a fertile ground for investigating strongly correlated electron phases. This is because the moir\'e pattern introduced by the relative twist between layers introduces…
The protected surface conduction of topological insulators is in high demand for the next generation of electronic devices. What is needed to move forward are robust settings where topological surface currents can be controlled by simple…
It is well known that the 3D electronic topological insulator (TI) with charge-conservation and time-reversal symmetry cannot have a trivial insulating surface that preserves symmetry. It is often implicitly assumed that if the TI surface…
In an ultrathin topological insulator (TI) film, a hybridization gap opens in the TI surface states, and the system is expected to become either a trivial insulator or a quantum spin Hall insulator when the chemical potential is within the…