相关论文: Interplay of Electron and Nuclear Spin Noise in Ga…
The spin fluctuations of electron and hole doped self-assembled quantum dot ensembles are measured optically in the low-intensity limit of a probe laser in absence and presence of longitudinal or transverse static magnetic fields. The…
We exploit spin noise spectroscopy (SNS) to directly observe build-up of dynamic nuclear polarization and relaxation of a perturbed nuclear spin-system to its equilibrium state in a single-shot experiment. The SNS experiments were performed…
Using a singlet-triplet spin qubit as a sensitive spectrometer of the GaAs nuclear spin bath, we demonstrate that the spectrum of Overhauser noise agrees with a classical spin diffusion model over six orders of magnitude in frequency, from…
For spin-based quantum computation in semiconductors, dephasing of electron spins by a fluctuating background of nuclear spins is a main obstacle. Here we show that this nuclear background can be precisely controlled in generic quantum dots…
Transport through spin-blockaded quantum dots provides a means for electrical control and detection of nuclear spin dynamics in the host material. Although such experiments have become increasingly popular in recent years, interpretation of…
We discuss the implications of a small indium content (3%) in a GaAs epilayer on the electron- and nuclear-spin relaxation due to enhanced quadrupolar effects induced by the strain. Using the weakly perturbative spin-noise spectroscopy, we…
Nuclear spins are an important source of dephasing for electron spin qubits in GaAs quantum dots. Most studies of their dynamics have focused on the relatively slow longitudinal polarization. We show, based on a semiclassical model and…
We observe the noise spectrum of electron spins in bulk GaAs by Faraday rotation noise spectroscopy. The experimental technique enables the undisturbed measurement of the electron spin dynamics in semiconductors. We measure exemplarily the…
We use time-resolved detection of the Hanle effect and polarized photoluminescence with dark intervals to investigate the buildup and decay of the spin polarization of nuclei interacting with donor-bound electrons in $n$-doped GaAs. Strong…
We report on the dynamics of electron spins in n-doped CdTe layers that differs significantly from the expected response derived from the studies dedicated to electron spin relaxation in n-GaAs. At zero magnetic field, the electron spin…
The ability to discriminate between simultaneously occurring noise sources in the local environment of semiconductor InGaAs quantum dots, such as electric and magnetic field fluctuations, is key to understanding their respective dynamics…
Similar to nitrogen-vacancy centers in diamond and impurity atoms in silicon, interstitial gallium deep paramagnetic centers in GaAsN have been proven to have useful characteristics for the development of spintronic devices. Among other…
We investigate the intrinsic spin dynamics of electrons bound to Al impurities in bulk ZnO by optical spin noise spectroscopy. Spin noise spectroscopy enables us to investigate the longitudinal and transverse spin relaxation time with…
Nuclear spin relaxation is studied in n-GaAs thick layers and microcavity samples with different electron densities. We reveal that both in metallic samples where electrons are free and mobile, and in insulating samples, where electrons are…
In III-V semiconductor nano-structures the electron and nuclear spin dynamics are strongly coupled. Both spin systems can be controlled optically. The nuclear spin dynamics is widely studied, but little is known about the initialization…
Nuclear spin polarization dynamics are measured in optically pumped individual GaAs/AlGaAs interface quantum dots by detecting the time-dependence of the Overhauser shift in photoluminescence (PL) spectra. Long nuclear polarization decay…
Understanding the decoherence of electron spins in semiconductors due to their interaction with nuclear spins is of fundamental interest as they realize the central spin model and of practical importance for using electron spins as qubits.…
We propose a model for spectral diffusion of localized spins in semiconductors due to the dipolar fluctuations of lattice nuclear spins. Each nuclear spin flip-flop is assumed to be independent, the rate for this process being calculated by…
We calculate the Overhauser frequency shifts in semiconductor nanostructures resulting from the hyperfine interaction between nonequilibrium electronic spins and nuclear spins. The frequency shifts depend on the electronic local density of…
Coherent two-level systems, or qubits, based on electron spins in GaAs quantum dots are strongly coupled to the nuclear spins of the host lattice via the hyperfine interaction. Realizing nuclear spin control would likely improve electron…