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相关论文: Resonant Tunneling and Intrinsic Bistability in Tw…

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We demonstrate gate-tunable resonant tunneling and negative differential resistance in the interlayer current-voltage characteristics of rotationally aligned double bilayer graphene heterostructures separated by hexagonal boron-nitride…

We investigate the current-voltage characteristics of a field-effect tunnelling transistor comprised of both monolayer and bilayer graphene with well-aligned crystallographic axes, separated by three layers of hexagonal boron nitride. Using…

介观与纳米尺度物理 · 物理学 2015-12-10 Thomas L M Lane , John R Wallbank , Vladimir I Fal'ko

Current-voltage characteristics of resonant-tunneling structures often exhibit intrinsic bistabilities. In the bistable region of the I-V curve one of the two current states is metastable. The system switches from the metastable state to…

介观与纳米尺度物理 · 物理学 2009-11-10 O. A. Tretiakov , K. A. Matveev

The chemical stability of graphene and other free-standing two-dimensional crystals means that they can be stacked in different combinations to produce a new class of functional materials, designed for specific device applications. Here we…

Recent developments in the technology of van der Waals heterostructures made from two-dimensional atomic crystals have already led to the observation of new physical phenomena, such as the metal-insulator transition and Coulomb drag, and to…

The tunneling current between independently contacted graphene sheets separated by boron nitride insulator is calculated. Both dissipative tunneling transitions, with momentum transfer due to disorder scattering, and non-dissipative regime…

介观与纳米尺度物理 · 物理学 2015-06-12 F. T. Vasko

We theoretically investigate resonant tunneling through S- and U-shaped nanostructured graphene nanoribbons. A rich structure of resonant tunneling peaks are found eminating from different quasi-bound states in the middle region. The…

介观与纳米尺度物理 · 物理学 2015-05-14 Z. Z. Zhang , Z. H. Wu , Kai Chang , F. M. Peeters

We prepare twist-controlled resonant tunneling transistors consisting of monolayer (Gr) and Bernal bilayer (BGr) graphene electrodes separated by a thin layer of hexagonal boron nitride (hBN). The resonant conditions are achieved by closely…

Graphene-based vertical heterostructures, particularly stacks incorporated with other layered materials, are promising for nanoelectronics. The stacking of two model Dirac materials, graphene and topological insulator, can considerably…

介观与纳米尺度物理 · 物理学 2016-03-24 Liang Zhang , Yuan Yan , Han-Chun Wu , Dapeng Yu , Zhi-Min Liao

Resonant electronic transmission through graphene-based double barriers (wells) is studied as a function of the incident wave vector, the widths and heights (depths) of the barriers (wells), and the separation between them. Resonant…

介观与纳米尺度物理 · 物理学 2007-05-23 J. Milton Pereira , P. Vasilopoulos , F. M. Peeters

A theory is developed for calculating vertical tunneling current between two sheets of bilayer graphene separated by a thin, insulating layer of hexagonal boron nitride, neglecting many-body effects. Results are presented using physical…

介观与纳米尺度物理 · 物理学 2015-09-16 Sergio C. de la Barrera , Randall M. Feenstra

Twisted bilayers of nodal superconductors were recently proposed as a promising platform to host superconducting phases that spontaneously break time-reversal symmetry. Here we extend this analysis to twisted multilayers, focusing on two…

超导电性 · 物理学 2022-07-28 Tarun Tummuru , Étienne Lantagne-Hurtubise , Marcel Franz

We demonstrate gate-tunable resonant tunneling and negative differential resistance between two rotationally aligned bilayer graphene sheets separated by bilayer WSe2. We observe large interlayer current densities of 2 uA/um2 and 2.5…

Electron's tunneling through potential barrier in monolayer and bilayer graphene lattices is investigated by using full tight-binding model. Emphasis is placed on the resonance tunneling feature and inter-valley scattering probability. It…

介观与纳米尺度物理 · 物理学 2008-08-25 Di Wu , Weiqiang Chen , Fu-Chun Zhang

Current switching in a double-barrier resonant tunneling structure is studied in the regime where the current-voltage characteristic exhibits intrinsic bistability, so that in a certain range of bias two different steady states of current…

介观与纳米尺度物理 · 物理学 2009-11-11 O. A. Tretiakov , K. A. Matveev

Two-dimensional (2D) crystals, such as graphene, hexagonal boron nitride and transitional metal dichalcogenides, have attracted tremendous amount of attention over the past decade due to their extraordinary thermal, electrical and optical…

材料科学 · 物理学 2017-02-16 Y. Zhao , Z. Wan , U. Hetmaniuk , M. P. Anantram

Stacking two-dimensional layered materials such as graphene and transitional metal dichalcogenides with nonzero interlayer twist angles has recently become attractive because of the emergence of novel physical properties. Stacking of…

Materials with flat electronic bands often exhibit exotic quantum phenomena owing to strong correlations. Remarkably, an isolated low-energy flat band can be induced in bilayer graphene by simply rotating the layers to 1.1$^{\circ}$,…

介观与纳米尺度物理 · 物理学 2019-01-29 Matthew Yankowitz , Shaowen Chen , Hryhoriy Polshyn , K. Watanabe , T. Taniguchi , David Graf , Andrea F. Young , Cory R. Dean

We report enhanced interlayer tunneling with reduced linewidth at zero interlayer bias in a twist-controlled double monolayer graphene heterostructure in the quantum Hall regime, when the top ($\nu_{\mathrm{T}}$) and bottom…

介观与纳米尺度物理 · 物理学 2022-11-22 Kenneth Lin , Nitin Prasad , G. William Burg , Bo Zou , Keiji Ueno , Kenji Watanabe , Takashi Taniguchi , Allan H. MacDonald , Emanuel Tutuc

We investigate the mesoscopic transport through a twisted bilayer graphene (TBG) consisting of a clean graphene nanoribbon on the bottom and a disordered graphene disc on the top. We show that, with strong top-layer disorder the…

介观与纳米尺度物理 · 物理学 2024-02-20 Zhe Hou , Ya-Yun Hu , Guang-Wen Yang
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