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Particular strain geometry in graphene could leads to a uniform pseudo-magnetic field of order 10T and might open up interesting applications in graphene nano-electronics. Through quantum transport calculations of realistic strained…

介观与纳米尺度物理 · 物理学 2015-03-13 Tony Low , F. Guinea

Intrinsic Hall conductivity, emerging when chiral symmetry is broken, is at the heart of future low energy consumption devices because it can generate non-dissipative charge neutral current. A symmetry breaking state is also induced by…

We investigate the noise in single layer graphene devices from equilibrium to far from equilibrium and found that the 1/f noise shows an anomalous dependence on the source-drain bias voltage (VSD). While the Hooge relation is not the case…

The applied voltage along a wire leads to a constant current density and, in turn, the azimuthal magnetic field. The absence of the radial current in a sample bulk requires nonzero radial(Hall) electric field to be present. We show that the…

介观与纳米尺度物理 · 物理学 2019-08-30 M. V. Cheremisin

An oscillographic study of the Hall voltage with an unpolarized alternating current through a platinum sample revealed choral features of the Hall effect, which clearly demonstrate the presence of the spin Hall effect in metals with a…

介观与纳米尺度物理 · 物理学 2021-01-27 Yu. N. Chiang , M. O. Dzyuba

When a graphene layer is stressed, the strain alters the phase an electron accumulates hopping between sites in a way that can be modeled as arising from a pseudo-magnetic vector potential. We examine the case of an oscillating graphene…

介观与纳米尺度物理 · 物理学 2017-11-02 Anita Bhagat , Kieran Mullen

In addition to spin, electrons in many materials possess an additional pseudo-spin degree of freedom known as 'valley'. In materials where the spin and valley degrees of freedom are weakly coupled, they can be both excited and controlled…

介观与纳米尺度物理 · 物理学 2019-06-12 Xian-Peng Zhang , Chunli Huang , Miguel A. Cazalilla

Interactions among electrons can give rise to striking collective phenomena when the kinetic energy of charge carriers is suppressed. One example is the fractional quantum Hall effect, in which correlations between electrons moving in two…

介观与纳米尺度物理 · 物理学 2012-09-24 Benjamin E. Feldman , Benjamin Krauss , Jurgen H. Smet , Amir Yacoby

The Hall resistivity (Rho_xy), resistivity (Rho_xx), and magnetization of three metallic ferromagnets are investigated as a function of magnetic field and temperature. The three ferromagnets, EuFe4Sb12 (Tc = 84 K), Yb14MnSb11 (Tc = 53 K),…

其他凝聚态物理 · 物理学 2009-11-11 Brian C. Sales , Rongying Jin , David Mandrus , Peter Khalifah

Graphene Hall effect magnetic field sensors hold great promise for the development of ultra-sensitive magnetometers. Their performance is frequently analysed using the two-channel model where electron and hole conductivities are simply…

介观与纳米尺度物理 · 物理学 2024-10-08 Lionel Petit , Tom Fournier , Géraldine Ballon , Cédric Robert , Delphine Lagarde , Pascal Puech , Thomas Blon , Benjamin Lassagne

The resistivity of gated graphene is studied taking into account electron and hole scattering by short- and long-range structural imperfections the characteristics of disorder were taken from the scanning tunneling microscopy data and by…

材料科学 · 物理学 2007-12-29 F. T. Vasko , V. Ryzhii

In this letter, we provide experimental evidence of the time-reversal symmetric Hall effect in a mesoscopic system, namely high-mobility graphene/WSe$_2$ heterostructures. This linear, dissipative Hall effect, whose sign depends on the sign…

介观与纳米尺度物理 · 物理学 2023-08-01 Priya Tiwari , Divya Sahani , Atasi Chakraborty , Kamal Das , Kenji Watanabe , Takashi Taniguchi , Amit Agarwal , Aveek Bid

A comparative study of anomalous-Hall current injection and anisotropic current injection (through planar Hall effect) are studied in Hall devices contacted to a lateral load circuit. Hall currents are injected into the load circuit from…

介观与纳米尺度物理 · 物理学 2025-10-06 V. Desbuis , D. Lacour , M. Hehn , S. Geiskopf , L. Michez , J. Rial , V. Baltz , J. -E. Wegrowe

A yet unexplored area in graphene electronics is the field of quantum ballistic transport through graphene nanostructures. Recent developments in the preparation of high mobility graphene are expected to lead to the experimental…

Graphene is an excellent material for Hall sensors due to its atomically thin structure, high carrier mobility and low carrier density. However, graphene devices need to be protected from the environment for reliable and durable performance…

应用物理 · 物理学 2018-04-26 Bogdan Karpiak , André Dankert , Saroj P. Dash

The electric-power dissipation of the anomalous-Hall current injected into a lateral load circuit is studied. The anomalous-Hall current is generated by a $\mathrm{Co_{75}Gd_{25}}$ ferrimagnetic Hall bar and injected into lateral contacts…

介观与纳米尺度物理 · 物理学 2023-11-14 D. Lacour , M. Hehn , Min Xu , J. -E. Wegrowe

Solid-state magnetic field sensors are important to both modern electronics and fundamental materials science. Many types of these sensors maintain high sensitivity only in a limited range of temperature and background magnetic field, but…

介观与纳米尺度物理 · 物理学 2020-08-21 Brian T. Schaefer , Lei Wang , Alexander Jarjour , Kenji Watanabe , Takashi Taniguchi , Paul L. McEuen , Katja C. Nowack

We numerically study the interplay of band structure, topological invariant and disorder effect in two-dimensional electron system of graphene in a magnetic field. Two \emph{distinct} quantum Hall effect (QHE) regimes exist in the energy…

介观与纳米尺度物理 · 物理学 2009-11-11 D. N. Sheng , L. Sheng , Z. Y. Weng

Measurement techniques based upon the Hall effect are invaluable tools in condensed matter physics. When an electric current flows perpendicular to a magnetic field, a Hall voltage develops in the direction transverse to both the current…

We apply Laughlin's gauge argument to analyze the $\nu=0$ quantum Hall effect observed in graphene when the Fermi energy lies near the Dirac point, and conclude that this necessarily leads to divergent bulk longitudinal resistivity in the…

介观与纳米尺度物理 · 物理学 2009-08-09 S. Das Sarma , Kun Yang