相关论文: Dipole-Allowed Direct Band Gap Silicon Superlattic…
We propose an optical method of shining circularly polarized and spatially periodic laser fields to imprint superlattice structures in two-dimensional electronic systems. By changing the configuration of the optical field, we synthesize…
Hyperdoped metastable sulfur atoms endow crystalline silicon with a strong sub-bandgap light absorption. In order to explore such metastable states, we develop a new high-throughput first-principles calculation method to search for all of…
We have calculated the dynamical optical conductivity for $\alpha-\mathcal{T}_3$ materials in the presence of a finite bandgap in their energy bandstructure. This is a special type of energy dispersions because for all…
Transition metal dichalcogenides exhibit many unexpected properties including two-dimensional (2D) superconductivity as the interlayer coupling being weakened upon either layer-number reduction or chemical intercalation. Here we report the…
Graphene lacks an intrinsic band-gap, which limits its use in electronic applications. Here we demonstrate that periodic arrays of topological defects can open and control a band-gap in a predictable manner governed by defect spacing and…
The lead-free double perovskite material (viz. Cs$_2$AgBiCl$_6$) has emerged as an efficient and environmentally friendly alternative to lead halide perovskites. To make Cs$_2$AgBiCl$_6$ optically active in the visible region of solar…
Integrating light emitters based on III-V materials with silicon-based electronics is crucial for further increase in data transfer rates in communication systems since the indirect bandgap of silicon prevents its direct use as a light…
Utilizations of silicon-based luminescent devices are restricted by the indirect-gap nature of diamond silicon. In this study, the high-throughput method is employed to expedite discoveries of direct-gap silicon crystals. The machine…
A kagome lattice of 3d transition metals hosts flat bands, Dirac fermions and saddle points. It provides a versatile platform for achieving topological superconductivity, anomalous Hall effect, unconventional density wave order and quantum…
We demonstrate from a fundamental perspective the physical and mathematical origins of band warping and band non-parabolicity in electronic and vibrational structures. Remarkably, we find a robust presence and connection with pairs of…
The downscaling of silicon-based structures and proto-devices has now reached the single atom scale, representing an important milestone for the development of a silicon-based quantum computer. One especially notable platform for atomic…
Tin Selenide (SnSe) is one of the best thermoelectric materials reported to date. The possibility of growing few-layer SnSe helped boost the interest in this long-known, earth abundant material. Pristine SnSe in bulk, mono- and few-layer…
We report first-principles results on the electronic structure of various silicene structures. For planar and simply buckled silicenes, we confirm their zero-gap nature and show a significant renormalization of their Fermi velocity by…
Electronic band gap and transport in quasi-periodic graphene superlattice of double-periodic sequence have been investigated. It is found that such quasi-periodic structure can possess a zero-averaged wave number (zero-$\bar{k}$) gap which…
We present ab initio calculations of the electronic and optical properties of hexagonal SiGe alloys in the lonsdaleite structure. Lattice constants and electronic band structures in excellent agreement with experiment are obtained using…
The improvement of light absorption in Si/BeSe$_{0.41}$Te$_{0.59}$ heterostructures for solar cell applications is studied theoretically. First, using simple approaches we found that light absorption could be improved in a single…
On-chip integrated light sources are essential for photonic integrated circuits, requiring waveguides to interface various components, from light sources to detectors. Two-dimensional (2D) transition metal dichalcogenide (TMD)…
Two-dimensional silicon carbide stands out among 2D materials, primarily due to its notable band gap, unlike its carbon-based counterparts. However, the binary nature and non-layered structure of bulk SiC present challenges in fabricating…
Silicon (Si) is one of the most extensively studied materials owing to its significance to semiconductor science and technology. While efforts to find a new three-dimensional (3D) Si crystal with unusual properties have made some progress,…
Semiconductor superlattices may display dispersions that are degenerate either at the zone center or zone boundary. We show that they are linear upon the wave-vector in the vicinity of the crossing point. This establishes a realisation of…