相关论文: Scaling Theory of Electrically Doped 2D Transistor…
We report electron transport measurements of a silicon double dot formed in multi-gated metal-oxide-semiconductor structures with a 15-nm-thick silicon-on-insulator layer. Tunable tunnel coupling enables us to observe an excitation spectrum…
Total energy electronic structure calculations, based on density functional theory or on the more empirical tight binding approach, are generally believed to scale as the cube of the number of electrons. By using the localisaton property of…
Quantum-confined semiconductor structures are the cornerstone of modern-day electronics. Spatial confinement in these structures leads to formation of discrete low-dimensional subbands. At room temperature, carriers transfer among different…
We use the Bethe ansatz equations to calculate the charge stiffness $D_{\rm c} = (L/2) d^2 E_0/d\Phi_{\rm c}^2|_{\Phi_{\rm c}=0}$ of the one-dimensional repulsive-interaction Hubbard model for electron densities close to the Mott insulating…
Analytical formulas are presented for simplified but useful qubit geometries that predict surface dielectric loss when its thickness is much less than the metal thickness, the limiting case needed for real devices. These formulas can thus…
Understanding the operation mode of a two-dimensional (2D) material-based field-effect transistor (FET) is one of the most essential issues in the study of electronics and physics. The existing Schottky barrier-FET model for devices with…
The phenomenology of overdoped high Tc superconductors can be described by a one band d wave Eliashberg theory where the mechanism of superconducting coupling is mediated by antiferromagnetic spin fluctuations and whose characteristic…
The Gaussian-smoothed optimal transport (GOT) framework, recently proposed by Goldfeld et al., scales to high dimensions in estimation and provides an alternative to entropy regularization. This paper provides convergence guarantees for…
We combine a recent mapping of the Anderson-Mott metal-insulator transition on a random-field problem with scaling concepts for random-field magnets to argue that disordered electrons near an Anderson-Mott transition show glass-like…
The theoretical approach proposed recently for description of redistribution of electronic charge in multilayered selectively doped systems is modified for a system with finite number of layers. A special attention is payed to the case of a…
Charge transport in disordered two-dimensional (2D) systems showcases a myriad of unique phenomenologies that highlight different aspects of the underlying quantum dynamics. Electrons in such systems undergo a crossover from ballistic…
We propose an implementation of a two-dimensional $\mathbb{Z}_2$ lattice gauge theory model on a shallow quantum circuit, involving a number of single and two-qubits gates comparable to what can be achieved with present-day and near-future…
Real-space imaging of three-dimensional atomic structures is a critical yet challenging task in materials science. Although scanning transmission electron microscopy has achieved sub-angstrom lateral resolution through techniques like…
We have investigated the electrostatics and electronic transport of the gate tunable 2D pn junction by implementing a comprehensive physics-based simulator that self-consistently solves the 2D Poisson's equation coupled to the…
Inspired by the observation of increasingly one-dimensional (1D) behavior with decreasing temperature in small-angle twisted bilayers of WTe$_2$ (tWTe$_2$), we theoretically explore the exotic sliding regimes that could be realized in…
We evaluate the doping dependence of the quasiparticle current and low temperature superfluid density in two slave-particle theories of the tt't''J model -- the slave-boson theory and doped-carrier theory. In the slave-boson theory, the…
Recent experimental and theoretical (both improved semiclassical and fully quantum-mechanical) results for B III and Ne VII delta n = 0 transitions with n = 2 or 3, respectively, are discussed. The probable reasons for disagreements by…
Organic electrochemical transistors (OECTs) underpin a range of emerging technologies, from bioelectronics to neuromorphic computing, owing to their unique coupling of electronic and ionic charge carriers. In this context, various OECT…
An upper dominating set is a minimal dominating set in a graph. In the \textsc{Upper Dominating Set} problem, the goal is to find an upper dominating set of maximum size. We study the complexity of parameterized algorithms for \textsc{Upper…
We review the scaling theory of disordered itinerant electrons with e-e interactions. We first show how to adjust the microscopic Fermi-liquid theory to the presence of disorder. Then we describe the non-linear sigma model (NLSM) with…