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相关论文: Strain induced mobility modulation in single-layer…

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By performing density functional theory-based ab-initio calculations, Raman active phonon modes of novel single-layer two-dimensional (2D) materials and the effect of in-plane biaxial strain on the peak frequencies and corresponding…

介观与纳米尺度物理 · 物理学 2018-04-04 M. Yagmurcukardes , C. Bacaksiz , E. Unsal , B. Akbali , R. T. Senger , H. Sahin

We have studied temperature dependences of electron transport in graphene and its bilayer and found extremely low electron-phonon scattering rates that set the fundamental limit on possible charge carrier mobilities at room temperature. Our…

介观与纳米尺度物理 · 物理学 2008-01-07 S. V. Morozov , K. S. Novoselov , M. I. Katsnelson , F. Schedin , D. C. Elias , J. A. Jaszczak , A. K. Geim

Multilayer MoS2 possesses highly anisotropic thermal conductivities along in-plane and cross-plane directions that could hamper heat dissipation in electronics. With about 9% cross-plane compressive strain created by hydrostatic pressure in…

Valence subband and transport properties of p-type metal-oxide-semiconductor (PMOS) inversion layer in uniaxially strained (110) and (111) Si channel have been studied theoretically in this work. Equal energy lines, carrier concentration…

介观与纳米尺度物理 · 物理学 2015-05-05 Jun Wei Fan

The anharmonic behavior of phonons and intrinsic thermal conductivity associated with the Umklapp scattering in monolayer MoS2 sheet are investigated via first-principles calculations within the framework of density functional perturbation…

材料科学 · 物理学 2015-06-18 Yongqing Cai , Jinghua Lan , Gang Zhang , Yong-Wei Zhang

The deposition of a high-$\kappa$ oxide overlayer is known to significantly enhance the room-temperature electron mobility in single-layer MoS$_{2}$ (SLM) but not in single-layer graphene (SLG). We give a quantitative account of how this…

材料科学 · 物理学 2014-09-04 Zhun-Yong Ong , Massimo V. Fischetti

We develop two types of graphene devices based on nanoelectromechanical systems (NEMS), that allows transport measurement in the presence of in situ strain modulation. Different mobility and conductance responses to strain were observed for…

The transport characteristics of a disordered MoS$_2$ nanoflake in the insulator regime are studied by electrical and magnetotransport measurements. The layered MoS$_2$ nanoflake is exfoliated from a bulk MoS$_2$ crystal and the conductance…

介观与纳米尺度物理 · 物理学 2019-06-11 Jianhong Xue , Shaoyun Huang , Ji-Yin Wang , H. Q. Xu

The impact of uniaxial and hydrostatic stress on the ballistic thermal conductance ($\kappa_{l}$) and the specific heat ($C_{v}$) of [100] and [110] Si nanowires are explored using a Modified Valence Force Field phonon model. An anisotropic…

介观与纳米尺度物理 · 物理学 2015-05-28 Abhijeet Paul , Gerhard Klimeck

We use neutron diffraction and muon spin relaxation to study the effect of in-plane uniaxial pressure on the antiferromagnetic (AF) orthorhombic phase in BaFe$_2$As$_2$ and its Co- and Ni-substituted members near optimal superconductivity.…

Atomically thin semiconducting MoS2 is of great interest for high-performance flexible electronic and optoelectronic devices. Initial measurements using back-gated field-effect transistor (FET) structures on SiO2 yielded mobility of 1-50…

介观与纳米尺度物理 · 物理学 2015-06-12 Michael S. Fuhrer , James Hone

Microscopic corrugations are ubiquitous in graphene even when placed on atomically flat substrates. These result in random local strain fluctuations limiting the carrier mobility of high quality hBN-supported graphene devices. We present…

The optical properties of silicon can be greatly tuned by applying strain and opening new perspectives, particularly in applications where infrared is key. In this work, we use a recent model for the indirect light absorption of silicon and…

We investigate the transport of excitons and trions in monolayer semiconductor WS$_2$ subjected to controlled non-uniform mechanical strain. We actively control and tune the strain profiles with an AFM-based setup in which the monolayer is…

介观与纳米尺度物理 · 物理学 2020-05-20 Moshe G. Harats , Jan N. Kirchhof , Mengxiong Qiao , Kyrylo Greben , Kirill I. Bolotin

We study the thermoelectric properties of bulk $MoSe_2$ within relaxation time approximation including electron-phonon and ionized impurity interactions using first-principles calculations at room temperatures. The anisotropy of this…

材料科学 · 物理学 2022-08-30 Md Golam Rosul , Mona Zebarjadi

We report on a theoretical investigation concerning the polaronic effect on the transport properties of a charge carrier in the one-dimensional molecular chain. Our technique is based on the Feynman's path integral approach. Analytical…

介观与纳米尺度物理 · 物理学 2015-12-10 Sikarin Yoo-Kong , Watchara Liewrian

We present microfabricated thermal actuators to engineer the biaxial strain in two-dimensional (2D) materials. These actuators are based on microheater circuits patterned onto the surface of a polymer with a high thermal expansion…

Strain engineering is a powerful strategy for controlling the structural and electronic properties of two-dimensional materials, particularly in systems hosting charge density wave (CDW) order. In this work, we apply uniaxial tensile and…

The intrinsic carrier transport dynamics in phosphorene is theoretically examined. Utilizing a density functional theory treatment, the low-field mobility and the saturation velocity are characterized for both electrons and holes in the…

介观与纳米尺度物理 · 物理学 2016-08-24 Zhenghe Jin , Jeffrey T. Mullen , Ki Wook Kim

In this study, we systematically investigated the mechanical responses of monolayer molybdenum ditelluride (MoTe2) using molecular dynamics (MD) simulations. The tensile behavior of trigonal prismatic phase (2H phase) MoTe2 under uniaxial…