相关论文: Redefinition of spin Hall magnetoresistance
Phenomenology similar to the nonreciprocal charge transport violating Onsagers reciprocity relations can develop in directionally inhomogeneous conducting films with nonuniform Hall coefficient along the current trajectory. The effect is…
We develop a theory of angle-dependent magnetoresistance (ADMR) in metallic altermagnets coupled to ferromagnetic insulators and establish criteria that distinguish them from conventional compensated magnets with spin-orbit coupling. We…
We study magnetotransport in conical helimagnet crystals. Spin dependent magnetoresistance exhibits dramatic properties for high and low electron concentrations at different temperatures. For spin up electrons we find negative…
The resistance of a heavy metal can be modulated by an adjacent magnetic material through the combined effects of the spin Hall effect, inverse spin Hall effect, and dissipation of the spin accumulation at the interface. This phenomenon is…
Direct and inverse spin Hall effects lie at the heart of novel applications that utilize spins of electrons as information carriers, allowing generation of spin currents and detecting them via the electric voltage. In the standard…
The in-plane anomalous Hall effect occurs when magnetization lies within the same plane as the electric field and Hall current, and requires magnetic point groups lacking rotational or mirror symmetries. While it is observed in both Weyl…
The recently discovered altermagnets, featured by the exotic correlation of magnetic exchange interaction and alternating crystal environments, have offered exciting cutting-edge opportunities for spintronics. Nevertheless, the…
We predict a magnetoresistance induced by the interfacial Rashba spin-orbit coupling in normal metal|ferromagnetic insulator bilayer. It depends on the angle between current and magnetization directions identically to the "spin Hall…
Two-component conductors -- e.g., semi-metals and narrow band semiconductors -- often exhibit unusually strong magnetoresistance in a wide temperature range. Suppression of the Hall voltage near charge neutrality in such systems gives rise…
Control of magnetization dynamics is one of the primary goals in spintronics. It has been demonstrated using spin Hall effect i.e charge current to spin current conversion in non-magnetic metal which has large spin-orbit coupling such as…
The efficient detection of the magnetism in 2D antiferromagnetic (AFM) insulators is crucial for the advancement of 2D AFM spintronics and remains a challenging problem. In this letter, we introduce the magnon nonlinear Hall current, a…
Linear magnetoresistance occurs in semiconductors as a consequence of strong electrical disorder and is characterized by nonsaturating magnetoresistance that is proportional to the applied magnetic field. By investigating a disordered…
Large linear magnetoresistance (MR) in electron-injected p-type silicon at very low magnetic field is observed experimentally at room temperature. The large linear MR is induced in electron-dominated space-charge transport regime, where the…
The field of spin electronics (spintronics) was initiated by the discovery of giant magnetoresistance (GMR) for which Fert[1] and Grunberg[2] were awarded the 2007 Nobel Prize for Physics. GMR arises from differential scattering of the…
The spin Hall magnetoresistance (SMR) and anomalous Hall effect (AHE) are observed in a Cr2O3/Ta structure. The structural and surface morphology of Cr2O3/Ta bilayers have been investigated. Temperature dependence of longitudinal and…
We report on spin Hall magnetoresistance (SMR) in bilayers composed of Pt and magnetic insulator MgFe$_{2}$O$_{4}$ (MFO) with spinel structure. The Pt thickness dependence of the SMR reveals that annealing of the MFO surface before…
We report the magnetoresistance and nonlinear Hall effect studies over a wide temperature range in pulsed laser deposited Ni0.07Zn0.93O thin film. Negative and positive contributions to magnetoresistance at high and low temperatures have…
Magnetoresistance (MR) of ion irradiated monolayer graphene samples with variable-range hopping (VRH) mechanism of conductivity was measured at temperatures down to $T = 1.8$ K in magnetic fields up to $B = 8$ T. It was observed that in…
A comprehensive study of magnetoresistance and Hall effect has been performed for the set of the single crystals of non-magnetic metal LuB12 with the Jahn-Teller instability of the boron cage and dynamic charge stripes forming along <110>…
Anisotropic magnetoresistance (AMR) is a relativistic magnetotransport phenomenon arising from combined effects of spin-orbit coupling and broken symmetry of a ferromagnetically ordered state of the system. In this work we focus on one…