相关论文: Electronic states induced by nonmagnetic defects i…

We found that non-magnetic defects in two-dimensional topological insulators induce bound states of two kinds for each spin orientation: electron- and hole-like states. Depending on the sign of the defect potential these states can be also…

We study bound states embedded into the continuum of edge states in two-dimensional topological insulators. These states emerge in the presence of a short-range potential of a structural defect coupled to the boundary. In this case the edge…

We study the electronic states that are formed due to the tunnel coupling between helical edge states (HESs) and bound states of nonmagnetic point defects in two-dimensional topological insulators in the general case of broken axial spin…

Nontrivial properties of electronic states in topological insulators are inherent not only to the surface and boundary states, but to bound states localized at structure defects as well. We clarify how the unusual properties of the…

Two-dimensional topological insulators are characterized by gapped bulk states and gapless helical edge states, i.e. time-reversal symmetric edge states accommodating a pair of counter-propagating electrons. An external magnetic field…

We show that edge states similar to those known for topological insulators exist in two-dimensional electron system with one-band spectrum in the presence of heterogeneous spin-orbit interaction (SOI). These states appear at boundaries…

We study backscattering of electrons and conductance suppression in a helical edge channel in two-dimensional topological insulators with broken axial spin symmetry in the presence of nonmagnetic point defects that create bound states. In…

Some popular mechanisms for restricting the diffusion of waves include introducing disorder (to provoke Anderson localization) and engineering topologically non-trivial phases (to allow for topological edge states to form). However, other…

We derive a model of localized edge states in the finite width strip for two-dimensional electron gas formed in the hybrid system of bismuth monolayer deposited on the silicon interface and described by the nearly-free electron model with…

The 2D TI edge states are considered within the Volkov-Pankratov (VP) Hamiltonian. A smooth transition between TI and OI is assumed. The edge states are formed in the total gap of homogeneous 2D material. A pair of these states are of…

Topological insulators are characterized by specially protected conduction on their outer boundaries. We show that the protected edge conduction exhibited by 2-D topological insulators (and also Chern insulators) is independent of…

A model of bound state formation from the delocalized edge states of 2D topological insulator is derived by considering the effects of magnetic barriers attached to the edge of the HgTe/CdTe quantum well. The resulting structure has a…

We study the effect of electron-electron interaction on the charge and spin structures at the edge of integer quantum Hall liquids, under three different kinds of confining potentials. Our exact diagonalization calculation for small systems…

Time-dependent perturbations can drive a trivial two-dimensional band insulator into a quantum Hall-like phase, with protected nonequilibrium states bound to its edges. We propose an experiment to probe the existence of these topological…

An important characteristic of topological band insulators is the necessary presence of in-gap edge states on the sample boundary. We utilize this fact to show that when the boundary is reconnected with a twist, there are always zero-energy…

Edge states emerging at the boundaries of materials with nontrivial topology are attractive for many practical applications due to their remarkable robustness to disorder and local boundary deformations, which cannot result in scattering of…

Edge states reveal the nontrivial topology of energy band in the bulk. As localized states at boundaries, many-body edge states may obey a special symmetry that is broken in the bulk. When local particle-particle interaction is induced,…

A detailed understanding of charged defects in two-dimensional semiconductors is needed for the development of ultrathin electronic devices. Here, we study negatively charged acceptor impurities in monolayer WS$_2$ using a combination of…

We address the co-existence of massless and massive topological edge states at the interface between two materials with different topological phases. We modify the well known Bernevig-Hughes-Zhang model to introduce a smooth function…

Excitons, bound states of electrons and holes, are affected by the properties of the underlying band structure of a material. Defects in lattice systems may trap electronic defect states, to which an electron can be excited to form…