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Phase-change memory (PCM), a promising candidate for next-generation non-volatile memories, exploits quenched glassy and thermodynamically stable crystalline states as reversibly switchable state variables. We demonstrate PCM functions…

强关联电子 · 物理学 2015-01-15 H. Oike , F. Kagawa , N. Ogawa , A. Ueda , H. Mori , M. Kawasaki , Y. Tokura

Non-volatile resistive switching is demonstrated in memristors with nanocrystalline molybdenum disulfide (MoS$_2$) as the active material. The vertical heterostructures consist of silicon, vertically aligned MoS$_2$ and chrome / gold metal…

Deep Learning neural networks are pervasive, but traditional computer architectures are reaching the limits of being able to efficiently execute them for the large workloads of today. They are limited by the von Neumann bottleneck: the high…

Few-layer ReS2 field-effect transistors (FET) with a local floating gate (FG) of monolayer graphene separated by a thin h-BN tunnel layer for application to a non-volatile memory (NVM) device is designed and investigated. FG-NVM devices…

The application of amorphous chalcogenide alloys as data-storage media relies on their ability to undergo an extremely fast (10-100 ns) crystallisation once heated at sufficiently high temperature. However, the peculiar features that make…

无序系统与神经网络 · 物理学 2015-06-05 Gabriele C. Sosso , Joerg Behler , Marco Bernasconi

We fabricated NiFe$_\textrm{2}$O$_\textrm{x}$ thin films on MgAl$_2$O$_4$(001) substrates by reactive dc magnetron co-sputtering varying the oxygen partial pressure during deposition. The fabrication of a variable material with oxygen…

Experimental and theoretical studies of spectral properties of chalcogenide Ge-S and As-Ge-S glasses and fibers are performed. A broad infrared (IR) luminescence band which covers the 1.2-2.3~$\mu$m range with a lifetime about 6~$\mu$s is…

The local geometrical randomness of metal foams brings complexities to the performance prediction of porous structures. Although the relative density is commonly deemed as the key factor, the stochasticity of internal cell sizes and shapes…

机器学习 · 计算机科学 2022-11-04 Da Chen , Nima Emami , Shahed Rezaei , Philipp L. Rosendahl , Bai-Xiang Xu , Jens Schneider , Kang Gao , Jie Yang

The notion of complex energy landscape underpins the intriguing dynamical behaviors in many complex systems ranging from polymers, to brain activity, to social networks and glass transitions. The spin glass state found in dilute magnetic…

A 30 nm Pt thin film evaporated onto a Si wafer was sputtered by 8 keV Ar$^{+}$ ions at various ion doses. The evolution of the modified sputtered films was monitored by atomic force microscopy (AFM), high resolution scanning electron…

材料科学 · 物理学 2007-05-23 P. Karmakar , D. Ghose

The effects of Fe-ion irradiation on the crystal structure and superconducting properties of MgB$_2$ thin films were investigated. Pristine samples were prepared using hybrid physical-chemical vapor deposition (HPCVD), and ion irradiation…

Interfacial hydration structures are crucial in wide-ranging applications, including battery, colloid, lubrication etc. Multivalent ions like Mg2+ and La3+ show irreplaceable roles in these applications, which are hypothesized due to their…

化学物理 · 物理学 2024-06-28 Han Li , Zhi Xu , Jiacheng Li , Alessandro Siria , Ming Ma

In this study we investigated the sorption ability of Ge20Se80 thin films applied as active layers of quartz crystal microbalance (QCM) for NO2 gas sensing. To identify the chalcogenide system appropriate for gas sensing, we provided data…

材料科学 · 物理学 2015-06-05 Ping Chen , Maria Mitkova , Dmitri A. Tenne , Kasandra Wolf , Velichka Georgieva , Lazar Vergov

Nanometallic devices based on amorphous insulator-metal thin films are developed to provide a novel non-volatile resistance-switching random-access memory (RRAM). In these devices, data recording is controlled by a bipolar voltage, which…

材料科学 · 物理学 2014-12-08 Xiang Yang

We suggest a new type of magnetic random access memory (MRAM) that is based on the phenomenon of the planar Hall effect (PHE) in magnetic films, and we demonstrate this idea with manganite films. The PHE-MRAM is structurally simpler than…

材料科学 · 物理学 2007-05-23 Y. Bason , L. Klein , J. -B. Yau , X. Hong , J. Hoffman , C. H. Ahn

An analysis of thermal transients from non-equilibrium ab initio molecular-dynamics simulations can be used to calculate the thermal conductivity of materials with a short phonon mean-free path. We adapt the approach-to-equilibrium…

材料科学 · 物理学 2020-06-01 Felix C. Mocanu , Konstantinos Konstantinou , Stephen R. Elliott

Ion beams are used routinely for processing of semiconductors, particularly sputtering, ion implantation and direct-write fabrication of nanostructures. However, the utility of ion beam techniques is limited by crystal damage and surface…

材料科学 · 物理学 2022-09-21 John A. Scott , James Bishop , Milos Toth

With the staggering increase of edge compute applications like Internet-of-Things (IoT) and artificial intelligence (AI), the demand for fast, energy-efficient on-chip memory is growing. While the fast and mature static random-access memory…

新兴技术 · 计算机科学 2026-03-30 Albi Mema , Simon Thomann , Narendra Singh Dhakad , Hussam Amrouch

Purpose: In treatment planning of charged-particle radiotherapy, patient heterogeneity is conventionally modeled as variable-density water converted from CT images to best reproduce the stopping power, which may lead to inaccuracies in the…

医学物理 · 物理学 2013-01-08 Nobuyuki Kanematsu , Taku Inaniwa , Yusuke Koba

Thin film growth of iron chalcogenides by pulsed laser deposition (PLD) is still a delicate issue in terms of simultaneous control of stoichiometry, texture, substrate/film interface properties, and superconducting properties. The high…