相关论文: Spin transport and spin conversion in compound sem…

The development of energy-efficient spin-based hybrid devices that can perform functions such as logic, communication, and storage requires the ability to control and transport highly polarized spin currents over long distances in…

Electrically-induced electron spin polarization is imaged in n-type ZnSe epilayers using Kerr rotation spectroscopy. Despite no evidence for an electrically-induced internal magnetic field, current-induced in-plane spin polarization is…

Although the electrical injection, transport and detection of spins in silicon have been achieved, the induced spin accumulation was much smaller than expected and desired, limiting the potential impact of Si-based spintronic devices. Here,…

The current-induced spin polarization and momentum-dependent spin-orbit field were measured in In$_{x}$Ga$_{1-x}$As epilayers with varying indium concentrations and silicon doping densities. Samples with higher indium concentrations and…

Based on a rigorous quantum-kinetic approach, spin-charge coupled drift-diffusion equations are derived for a strongly confined two-dimensional hole gas. An electric field leads to a coupling between the spin and charge degrees of freedom.…

Efforts to achieve efficient injection of spin-polarized electrons into a semiconductor, a key prerequisite for developing electronics that exploit the electron's spin degree of freedom, have so far met with limited success. Here we report…

We demonstrate the spin valve effect by ballistic transport in fully epitaxial MnAs ferromagnetic metal / GaAs semiconductor / GaAs:MnAs granular hybrid heterostructures. The GaAs:MnAs material contains ferromagnetic MnAs nanoparticles in a…

We report on the determination of the spin Hall angle and the identification of the role of the interface roughness for the inverse spin Hall effect (ISHE) in ultra-clean, defect-reduced epitaxial Pt films. By applying vector network…

Electrical spin transport and accumulation have been measured in highly Si doped Al0.3Ga0.7As utilizing a lateral spin transport device. Persistent photoconductivity allows for the tuning of the effective carrier density of the channel…

We report magnon spin transport in nickel ferrite (NiFe$_2$O$_4$, NFO)/ platinum (Pt) bilayer systems at room temperature. A nonlocal geometry is employed, where the magnons are excited by the spin Hall effect or by the Joule heating…

Spin pumping enables the vertical transport of pure spin current through Al in a Pd/Al/Ni80Fe20(Py) trilayer film, in which the Py acts as a spin battery. The spin current injected into the Al flows through the Al to reach the Pd, resulting…

Several different experimental techniques have been used in efforts to measure the spin Hall conductivity and the spin Hall angle in Pt samples at room temperature, with results that disagree by more than a factor of 20, with spin Hall…

Electrically generated spin accumulation due to the spin Hall effect is imaged in n-GaAs channels using Kerr rotation microscopy, focusing on its spatial distribution and time-averaged behavior in a magnetic field. Spatially-resolved…

Using long-distance lateral devices, spin transport near the interface of Si and its native oxide (SiO2) is studied by spin-valve measurements in an in-plane magnetic field and spin precession measurements in a perpendicular magnetic field…

Electrical spin injection and transport in silicon are central challenges for realizing semiconductor-based spintronic devices, particularly in p-type Si, where strong spin relaxation and interface effects often suppress detectable spin…

The nonlocal spin resistance is measured as a function of temperature in a Fe/GaAs spin-injection device. For nonannealed samples that show minority-spin injection, the spin resistance is observed up to room temperature and decays…

Using one of the methods of quantum nonequilibrium statistical physics we have investigated the spin transport transverse to the normal metal/ferromagnetic insulator interface in hybrid nanostructures. An approximation of the effective…

The generation and manipulation of carrier spin polarization in semiconductors solely by electric fields has garnered significant attention as both an interesting manifestation of spin-orbit physics as well as a valuable capability for…

The spin-orbit coupling may generate spin transverse force on moving electron spin, which gives a heuristic picture for the quantum transverse transport of electron. A relation between the spin and anomalous Hall conductance and spin force…

We have investigated electrical spin injection from Ni81Fe19 into an InAs quantum well through MgO tunneling barrier for potential application to InAs-based spin field effect transistor. Injected spin polarized current were detected in both…