中文
相关论文

相关论文: High-Mobility Bismuth-based Transparent P-Type Oxi…

200 篇论文

As the continuing down-scaling of field-effect transistors (FETs) in more-than-Moore integrated circuits, finding new functional two-dimensional (2D) materials with a higher dielectric constant (high-k) serve as gate dielectrics is…

材料科学 · 物理学 2022-12-06 Yue Hu , Jingwen Jiang , Peng Zhang , Fuxin Guan , Da Li , Zhengfang Qian , Pu Huang , Xiuwen Zhang

Materials with high-dielectric constant easily polarize under external electric fields, allowing them to perform essential functions in many modern electronic devices. Their practical utility is determined by two conflicting properties:…

材料科学 · 物理学 2024-01-12 Janosh Riebesell , T. Wesley Surta , Rhys Goodall , Michael Gaultois , Alpha A Lee

The ideal band gap for a photovoltaic active layer for the solar spectrum is around 1.3 eV. However oxides with such values are rare. One of the most studied oxides to date as a photovoltaic active layer is the cuprous oxide Cu2O. Its band…

其他凝聚态物理 · 物理学 2022-07-08 Rémi Ndioukane , Fanta Baldé , Ndéye C. Y. Fall , Diouma Kobor , Laurence Motte

Transparent electronic materials are increasingly in demand for a variety of optoelectronic applications. BaSnO3 is a semiconducting oxide with a large band gap of more than 3.1 eV. Recently, we discovered that La doped BaSnO3 exhibits…

We theoretically investigate Sn(II) phosphates as optoelectronic materials using first principles calculations. We focus on known prototype materials Sn$_n$P$_2$O$_{5+n}$ (n=2, 3, 4, 5) and a previously unreported compound, SnP$_2$O$_6$…

材料科学 · 物理学 2016-12-06 Qiaoling Xu , Yuwei Li , Lijun Zhang , Weitao Zheng , David J. Singh , Yanming Ma

Semiconductors simultaneously possessing high carrier mobility, moderate bandgap, and ambient environment stability are so important for the modern industry, and Si-based semiconducting materials can match well with the previous silicon…

介观与纳米尺度物理 · 物理学 2020-12-02 Yan Qian , Erjun Kan , Kaiming Deng , Haiping Wu

With an indirect band gap in the visible and a direct band gap at a much higher energy, boron phosphide (BP) holds promise as an unconventional p-type transparent conductor. Previous experimental reports deal almost exclusively with…

The highly conducting and transparent inorganic perovskites SrBO$_3$ with V, Nb, Mo, and their mixtures at the B-site have recently attracted the attention of the oxide electronics community as novel alternative transparent conducting…

Vacancy ordered halide perovskites have been extensively investigated as promising lead-free alternatives to halide perovskites for various opto-electronic applications. Among these Cs$_{2}$TiBr$_{6}$ has been reported as a stable absorber…

材料科学 · 物理学 2023-06-28 B. Cucco , G. Bouder , L. Pedesseau , C. Katan , J. Even , M. Kepenekian , G. Volonakis

Superconducting bismuthates (Ba,K)BiO$_{3}$ (BKBO) constitute an interesting class of superconductors in that superconductivity with a remarkably high $T_\mathrm{c}$ of 30 K arises in proximity to charge density wave (CDW) order. Prior…

The p-type transistor is an indispensable component of semiconductor technology, enabling complementary operation with n-channel transistors for computation, storage, and communication. Achieving both high robustness and high efficiency is…

Fabricating complex transition metal oxides with a tuneable band gap without compromising their intriguing physical properties is a longstanding challenge. Here we examine the layered ferroelectric bismuth titanate and demonstrate that, by…

In2O3 is a prototype wide-band-gap semiconductor that exhibits metallic conductivity when highly doped with Sn while retaining a high degree of transparency to visible light. It is widely used as a transparent window/electrode in solar…

材料科学 · 物理学 2019-03-27 Fernando P. Sabino , Su-Huai Wei , Anderson Janotti

Proton-conducting solid acids could enable water-free operation of high-temperature fuel cells. However, systematic materials screening has, hitherto, been computationally prohibitive. Here, we introduce a two-stage high-throughput…

化学物理 · 物理学 2026-02-18 Jonas Hänseroth , Max Großmann , Malte Grunert , Erich Runge , Christian Dreßler

The prospects of scaling current photovoltaic technologies to terawatt levels remain uncertain. All-oxide photovoltaics could open rapidly scalable manufacturing routes, if only oxide materials with suitable electronic and optical…

材料科学 · 物理学 2016-04-04 Haowei Peng , Andre Bikowski , Andriy Zakutayev , Stephan Lany

Transparent conducting oxides (TCOs) are essential to many technologies. These materials are doped (\emph{n}- or \emph{p}-type) oxides with a large enough band gap (ideally $>$3~eV) to ensure transparency. However, the high carrier…

材料科学 · 物理学 2016-06-22 Viet-Anh Ha , David Waroquiers , Gian-Marco Rignanese , Geoffroy Hautier

Titanium dioxide (TiO2) is a wide band gap semiconducting material which is promising for photocatalysis. Here we present first-principles calculations to study the pressure dependence of structural and electronic properties of two TiO2…

材料科学 · 物理学 2017-06-21 Yong Yang

The discovery and design of new materials are paramount in the development of green technologies. High entropy oxides represent one such group that has only been tentatively explored, mainly due to the inherent problem of navigating vast…

Metal oxide thin-film transistors are fast becoming a ubiquitous technology for application in driving backplanes of organic light-emitting diode displays. Currently all commercial products rely on metal oxides processed via physical vapor…

Despite their puzzling vibrational characteristics that include strong signatures of anharmonicity and thermal disorder already around room temperature, halide perovskites exhibit favorable optoelectronic properties for applications in…

材料科学 · 物理学 2022-02-08 Christian Gehrmann , Sebastián Caicedo-Dávila , Xiangzhou Zhu , David A. Egger