相关论文: n-Type Chalcogenides by Ion Implantation

We present the first review of the current state of the literature on electronic properties and phase transitions in TlX and TlMX2 (M = Ga, In; X = Se, S, Te) compounds. These chalcogenides belong to a family of the low-dimensional…

Ultra-wide bandgap (UWBG) materials hold immense potential for high-power RF electronics and deep ultraviolet photonics. Among these, AlGaN emerges as a promising candidate, offering a tunable bandgap from 3.4 eV (GaN) to 6.1 eV (AlN) and…

In analogy with light refraction at optical boundary, ballistic electrons also undergo refraction when propagate across a semiconductor junction. Establishing a negative refractive index in conventional optical materials is difficult, but…

N-type doping in Si by shallow impurities, such as P, As and Sb, exhibits an intrinsic limit due to the Fermi-level pinning via defect complexes at high doping concentrations. Here we demonstrate that doping Si with the chalcogen Te by…

Core-clad fibers on the basis of high-purity 1300 ppmw Pr(3+)-doped Ga-Ge-As-Se and 2000 ppmw Pr(3+) -doped In-Ge-As-Se-I glasses have been prepared. The minimum optical losses of the fibers are at the level of 1 dB/m in the wavelength…

Recently synthesized novel phase of germanium selenide ({\gamma}-GeSe) adopts a hexagonal lattice and a surprisingly high conductivity than graphite. This triggers great interests in exploring its potential for thermoelectric applications.…

Charge dynamics and its critical behavior are investigated near the metal-insulator transition of layered-nickelate R2-xSrxNiO4 (R=Nd, Eu). The polarized x-ray absorption spectroscopy experiment clearly shows the multi-orbital nature which…

Carbon nanotube (CNT) heaters with sub-5 nm diameter induce highly localized phase change in Ge2Sb2Te5 (GST) chalcogenide. A significant reduction in resistance of test structures is measured as the GST near the CNT heater crystallizes.…

Diamond is an excellent band insulator. However, boron (B) doping is known to induce superconductivity. We present two interesting effects in superconducting B doped diamond (BDD) thin films: i) Wohlleben effect (paramagnetic Meissner…

A structure of germanium selenide glasses is simulated by the featured clusters built from the tetrahedral GeSe4 units up to the clusters with six germanium atoms (Ge6Se16H4 and Ge6Se16H8). Quantum chemical calculations at the DFT level…

Thin film growth of iron chalcogenides by pulsed laser deposition (PLD) is still a delicate issue in terms of simultaneous control of stoichiometry, texture, substrate/film interface properties, and superconducting properties. The high…

The van der Waals, pseudo-binary chalcogenides (ACh)m(Pn2Ch3)n (A = Ge, Mn, Pb, etc.; Pn = Sb or Bi; Ch = Te, Se) have recently been reported to host a vast landscape of topological phases of matter, including the quantum anomalous Hall…

Superconductivity in anti-PbO-type iron chalcogenides Fe1-xTe1-ySey (x = 0, 0.1, y = 0.1 0.4) depends on the amount (x) of interstitial iron atoms located between the FeTe1-ySey layers. Non-superconducting samples of nominal Fe1.1Te1-ySey…

We have used a density-functional-based tight-binding method in order to create structural models of the canonical chalcogenide glass, amorphous (a-)As$_2$S$_3$. The models range from one containing defects that are both chemical (homopolar…

Colloidal semiconductor nanocrystals are nanomaterials synthesized in solution. Below a certain size, these nanocrystals acquire quantum confinement properties: their optoelectronic properties depend on the nanoparticle size. In the visible…

Transition-metal chalcogenides host various phases of matter, such as charge-density wave (CDW), superconductors, and topological insulators or semimetals. Superconductivity and its competition with CDW in low-dimensional compounds have…

We report on density-functional-based tight-binding (DFTB) simulations of a series of amorphous arsenic sulfide models. In addition to the charged coordination defects previously proposed to exist in chalcogenide glasses, a novel defect…

Graphene is a promising candidate for optoelectronic applications. In this report, a double gated bilayer graphene FET has been made using a combination of electrostatic and electrolytic gating in order to form an abrupt p-n junction. The…

We have used scanning micro x-ray diffraction to characterize different phases in superconducting K$_{x}$Fe$_{2-y}$Se$_2$ as a function of temperature, unveiling the thermal evolution across the superconducting transition temperature…

Zincblende copper iodide has been attracting growing interest as p-type semiconductor for applications in transparent electronics and transparent thermoelectrics. A key step towards technological applications is the possibility to enhance…