相关论文: Intrinsic interface states in InAs-AlSb heterostru…
We study one- and two-dimensional periodic tight-binding models under the presence of a potential that grows to infinity in one direction, hence preventing the particles to escape in this direction (the soft wall). We prove that a spectral…
We report first-principles density-functional pseudopotential calculations on the atomic structures, electronic properties, and band offsets of BaO/BaTiO$_3$ and SrO/SrTiO$_3$ nanosized heterojunctions grown on top of a silicon substrate.…
The delicate interfacial conditions and behaviors play critical roles in determining the valuable physical properties of two-dimensional materials and their heterostructures on substrates. However, directly probing these complex interface…
Utilizing the hierarchy of correlations in the context of a Fermi-Hubbard model, we deduce the presence of quasi-particle bound states at the interface between a Mott insulator and a semiconductor, as well as within a…
We formulate the tight-binding model for cubic $\alpha$-Sn based on the DFT calculations. In the model, we incorporate a variable bond angle, which allows us to simulate the effect of the in-plane strain. In the bulk, we demonstrate the…
InAs_{x}Sb_{1-x} alloys show a strong bowing in the energy gap, the energy gap of the alloy can be less than the gap of the two parent compounds. We demonstrate that a consequence of this alloying is a systematic degradation in the…
Based on a two-orbit four-band tight binding model, we investigate the low-lying electronic states around the interstitial excess Fe ions in the iron-based superconductors by using T-matrix approach. It is shown that the local density of…
We present a tight-binding (TB) model and $\mathbf{k\cdot p}$ theory for electrons in monolayer and few-layer InSe. The model is constructed from a basis of all $s$ and $p$ valence orbitals on both indium and selenium atoms, with…
Bound states at interfaces between superconductors and other materials are a powerful tool to characterize the nature of the involved systems, and to engineer elusive quantum excitations. In-gap excitations of conventional s-wave…
We study the effect of different open boundary conditions on the insulating ground states of the one-dimensional extended Bose-Hubbard model at and near unit filling. To this end, we employ the density matrix renormalization group method…
We theoretically investigate a two-dimensional heterostructure composed of a topological insulator (TI) and a Mott insulator (MI), and clarify what kind of electronic states can be realized at the interface. By using inhomogeneous dynamical…
In a tight binding framework, we analyze the characteristics of electronic states in strongly disordered materials (hopping sites are placed randomly with no local order) with tunneling matrix elements decaying exponentially in the atomic…
The interface between two materials described by spectrally gapped Hamiltonians is expected to host an in-gap interface mode, whenever a certain topological invariant changes across the interface. We provide a precise statement of this…
Whereas the concept of topological band-structures was developed originally for insulators with a bulk bandgap, it has become increasingly clear that the prime consequences of a non-trivial topology -- spin-momentum locking of surface…
Topological materials hosting metallic edges characterized by integer quantized conductivity in an insulating bulk have revolutionized our understanding of transport in matter. The topological protection of these edge states is based on…
The air-water interface plays a crucial role in many aspects of science, because of its unique properties, such as a two-dimensional hydrogen bond (HB) network and completely different HB dynamics compared to bulk water. However, accurately…
The electronic properties of the cleavage InAs(110) surface are studied using a semi-empirical tight-binding method which employs an extended atomic-like basis set. We calculate the surface electronic band structure which is studied as a…
The InSb/CdTe heterojunction structure, characterized by low effective mass and high electron mobility, exhibits interfacial energy band bending, leading to the Rashba spin-orbit coupling effect and nonreciprocal transport, which makes its…
We study the tight-binding model with two distinct hoppings $(t_L, t_S)$ on the two-dimensional hexagonal golden-mean tiling and examine the confined states with $E=0$, where $E$ is the eigenenergy. Some confined states found in the case…
High-temperature superconductivity in iron-based layered compounds discovered by Hosono group (Kamihara et al 2006 J. Am. Chem. Soc. 128 10012) is fascinating physical phenomenon which still has many unanswered questions. One of these…