相关论文: Afterpulsing studies of low noise InGaAs/InP singl…
Integrated technologies greatly enhance the prospects for practical quantum information processing and sensing devices based on trapped ions. High-speed and high-fidelity ion state readout is critical for any such application. Integrated…
The infrared reflectance of the transition metal chalcogenide 1T-TaS2 has been measured at temperatures from 30K to 360K over 30-45,000cm^-1 (4meV-5.5eV). The optical conductivity was obtained by Kramers-Kronig analysis. At 360K only modest…
A photon detector combining the two avalanche photon diodes (APD) has been demonstrated for qubit discrimination in 1550 nm. Spikes accompanied with the signals in gated-mode were canceled by balanced output from the two APDs. The spike…
Superconducting nanowire single-photon detectors (SNSPDs) combine high detection efficiency, low noise, and excellent timing resolution, making them a leading platform for photon-counting applications. However, despite decades of materials…
Forward proton spectrometers at high-energy proton colliders rely on precision timing to discriminate signal from background. Silicon low gain avalanche diodes (LGADs) are a candidate for future timing detectors in these systems. A major…
We have integrated a commercial avalanche photodiode (APD) and the circuitry needed to operate it as a single-photon detector (SPD) onto a single PC-board. At temperatures accessible with Peltier coolers (~200-240K), the PCB-SPD achieves…
We investigate the role of electrothermal feedback in the operation of superconducting nanowire single-photon detectors (SNSPDs). It is found that the desired mode of operation for SNSPDs is only achieved if this feedback is unstable, which…
We present detector characterization of a state-of-the-art near-infrared (950nm - 1650 nm) Discrete Avalanche Photodiode detector (NIRDAPD) 5x5 array. We designed an experimental setup to characterize the NIRDAPD dark count rate, photon…
We report electro-absorption modulation of light at around 1550 nm in a unipolar InGaAlAs optical waveguide containing a InGaAs/AlAs double-barrier resonant tunneling diode (DB-RTD). The RTD peak-to-valley transition increases the electric…
III-V material based digital alloy Avalanche Photodiodes (APDs) have recently been found to exhibit low noise similar to Silicon APDs. The III-V materials can be chosen to operate at any wavelength in the infrared spectrum. In this work, we…
The present manuscript summarizes novel studies on the application of large area avalanche photodiodes (LAAPDs) to the detection of X-rays and vacuum ultraviolet (VUV) light. The operational characteristics of four different LAAPDs…
Low-Gain Avalanche Diode (LGAD) sensor is one of candidate sensors for the tracker at future hadron collider experiments. To use this sensor as a tracking detector, AC-LGAD sensor is being developed which has both timing and spatial…
We implement an electron avalanche photodiode (e-APD) in the MIRC-X instrument, upgrade of the 6-telescope near-infrared imager MIRC, at the CHARA array. This technology should improve the sensitivity of near-infrared interferometry. We…
We report a novel negative photoconductivity (NPC) mechanism in n-type indium arsenide nanowires (NWs). Photoexcitation significantly suppresses the conductivity with a gain up to 10^5. The origin of NPC is attributed to the depletion of…
N-polar GaN/AlN resonant tunneling diodes are realized on single-crystal N-polar GaN bulk substrate by plasma-assisted molecular beam epitaxy growth. The room-temperature current-voltage characteristics reveal a negative differential…
Double barrier GaN/AlN resonant tunneling heterostructures have been grown by molecular beam epitaxy on the (0001) plane of commercially available bulk GaN substrates. Resonant tunneling diodes were fabricated; room temperature…
A mechanism of $1/f$ noise due to traps formed by impurities which have no neighbors with close energies in their vicinity is studied. Such traps slowly exchange electrons with the rest of conducting media. The concentration of traps and…
Two-phase Cryogenic Avalanche Detectors (CRADs) with combined THGEM/GAPD multiplier have become an emerging potential technique for dark matter search and coherent neutrino-nucleus scattering experiments. In such a multiplier the THGEM hole…
In this work, we present an experimental study of nanosecond high-voltage discharges in a pin-to-pin electrode configuration at atmospheric conditions operating in single-pulse mode (no memory effects). Various discharge parameters,…
The ability to control the speed and polarisation of light pulses will allow for faster data flow in optical networks of the future. Optical delay and switching have been achieved using slow-light techniques in various media, including…