相关论文: Graphene defect formation by extreme ultraviolet g…
Although defects on graphene can degrade electron transport and its ability for use as a protection layer, they can also be helpful to tailor the local properties or activate new sites for particular adsorbates. Here, carbon vacancy defects…
Graphene is a mechanically robust 2D material promising for flexible optoelectronic applications. However, its electromagnetic properties under strain are experimentally poorly understood. Here we present the far-infrared transmission…
Exact stationary solutions of the electron-photon Dirac equation are obtained to describe the strong interaction between massless Dirac fermions in graphene and circularly polarized photons. It follows from them that this interaction forms…
We employ the first-principles GW+Bethe Salpeter equation approach to study the electronic structure and optical absorption spectra of uniaxial strained graphene with many-electron effects included. Applied strain not only induces an…
The presence of defects such as vacancies in solids has prominent effects on their mechanical properties. It not only modifies the stiffness and strength of materials, but also changes their morphologies. The latter effect is extremely…
The recent discovery of methods to isolate graphene, a one-atom-thick layer of crystalline carbon, has raised the possibility of a new class of nano-electronics devices based on the extraordinary electrical transport and unusual physical…
The effects of Ga+ ion irradiation and high temperature annealing on behavior of nanocrystalline graphene directly grown on quartz and sapphire are presented. It is shown that nanocrystalline graphene stands fairly high doses of ion…
Observations of topological defects associated with Stone-Wales-type transformations (i.e., bond rotations) in high resolution transmission electron microscopy (HRTEM) images of carbon nanostructures are at odds with the equilibrium…
An analytical study is presented of the double resonant Raman scattering process in graphene, responsible for the D and D$^{\prime}$ features in the Raman spectra. This work yields analytical expressions for the D and D$^{\prime}$…
Raman spectroscopy is a fast, non-destructive means to characterize graphene samples. In particular, the Raman spectra show a significant dependence on doping. While the change in position and width of the G peak can be explained by the…
Photoelectron emission microscopy PEEM is a powerful tool to spectroscopically image dynamic surface processes at the nanoscale but is traditionally limited to ultra high or moderate vacuum conditions. Here, we develop a novel grapheme…
The Raman scattering spectra (RS) of two series of monolayer graphene samples irradiated with various doses of C$^{+}$ and Xe$^{+}$ ions were measured after annealing in high vacuum, and in forming gas (95\%Ar+5\%H$_{2}$). It was found that…
We report on the structural and transport properties of the smallest dislocation loop in graphene, known as a flower defect. First, by means of advanced experimental imaging techniques, we deduce how flower defects are formed during…
Using the continuum model, we investigate theoretically contribution of the low-energy electronic excitations to the Raman spectrum of superconducting monolayer graphene. We consider superconducting phases characterised by an isotropic…
The formation of graphene on the (0001) surface of SiC (the Si-face) is studied by atomic force microscopy, low-energy electron microscopy, and scanning tunneling microscopy/spectroscopy. The graphene forms due to preferential sublimation…
Graphene, being an ultrathin, durable, flexible, transparent material with superior conductivity and unusual optical properties, promises many novel applications in electronics, photonics and optoelectronics. For applications in…
When high-frequency radiation is incident upon graphene subjected to a perpendicular magnetic field, graphene absorbs incident photons by allowing transitions between nearest LLs that follow strict selection rules dictated by angular…
The morphology of graphene on SiC {0001} surfaces formed in various environments including ultra-high vacuum, 1 atm of argon, and 10^-6 to 10^-4 Torr of disilane is studied by atomic force microscopy, low-energy electron microscopy, and…
Electron beams in two-dimensional systems can provide a useful tool to study energy-momentum relaxation of electrons and to generate microwave radiation stemming from plasma-beam instabilities. Naturally, these two applications cannot…
Few-layer graphene deposited on semiconductor nanorods separated by undoped spacers has been studied in perspective for the fabrication of stable nanoresonators. We show that an applied bias between the graphene layer and the nanorod…